PTA压力离心机转子的改造

介绍了PTA压力离心机的主要性能参数、工作原理、分离效果的影响因素。为了增大沉渣在过渡区及脱水区滞留的时问，同时为达到在过渡区及脱水区对沉渣加入纯净水进行再冲洗的目的，对螺旋送料转子、挡液环、进料管进行了改造。改造后，沉渣在脱水区的停留时间由0．44a增至0．72s，2．5～3t／h的冲洗水对脱水区的沉渣进行冲洗效果较好。产品中的杂质质量分数较改造前减少15％，产品优等品率提高到99％。     

IRIS/AP型电感耦合等离子体光谱仪激发光源常见故障分析

本文介绍IRIS/AP型ICP的激发光源(炬管),并较为全面地阐述和分析其不能正常激发点燃的常见故障及其原因。     

一台循环流化床锅炉U型二次分离的改进对过热器爆管的影响

文章通过对一台循环流化床锅炉U型二次分离装置的改进，减少了过热器爆管的介绍，给出了采用多次离心分离技术，改善和提高烟尘分离效率，从而改善过热器外部工作条件，达到减少爆管发生的措施，相应提出了一些有关的建议。     

Modeling for local dynamic behaviors of phenol biodegradation in bubble columns

A coupled three-dimensional (3-D) model, combining hydrodynamics with biochemical reactions, was developed to simulate the local transient flow patterns and the dynamic behaviors of cell growth and phenol biodegradation by yeast Candida tropicalis in the bubble-column bioreactor, using the computational fluid dynamic (CFD) method. In order to validate this proposed model effectively, the validation of the local hydrodynamic characteristics of the gas-mineral salt solution (gas-liquid) two-phase system, with the phenol concentration of 1200 mg/L, and with the absence of cells, was performed in a square-sectioned bubble column bioreactor using the LDA system and conductivity probe. Furthermore, the validation of phenol biodegradation behaviors by yeast Candida tropicalis at different initial concentrations of phenol and cell was also carried out in the above bubble-column bioreactor. The results indicated that the model simulations had a satisfying agreement with the experimental data. Finally, the local instantaneous flow and phenol biodegradation features including gas holdup, gas velocity, liquid velocity, cell concentration and phenol concentration inside the bioreactor were successfully predicted in different-scale bubble columns by the proposed model. © 2006 American Institute of Chemical Engineers AIChE J, 2006     

均匀设计法分析制备过程对钴钼硫化物催化剂机械强度的影响

建立了CoMoP/Al2O3加氢精制催化剂机械强度及其可靠性在制备过程中的数学模型,采用均匀设计考察了浸渍、干燥、煅烧、硫化4个制备过程中,浸渍时间、干燥温度、干燥时间、煅烧温度、煅烧时间、硫化温度和硫化升温速率7个实验因子对催化剂强度均值、Weibull模量的影响,同时考察了这些因素对颗粒密度的影响。方差分析表明所有模型都是充足的。实验结果表明,硫化过程是影响催化剂强度均值的主要过程。在实验范围内提高硫化温度、降低硫化时的升温速率有利于提高催化剂的强度。影响催化剂Weibull模量的因素主要为各个制备过程的交互效应。要提高催化剂强度的可靠性就必须全面考虑催化剂制备的各个过程,特别是各个制备过程的交互效应。     

苏里格低渗强非均质性气田开发技术对策探讨

鄂尔多斯盆地苏里格气田储集层具有低渗、强非均质性、中强压敏的特点，气井产能低，稳产期短。根据单井模拟及生产动态分析，气井低产量生产可以降低压敏效应的影响，加强气井低产量生产阶段的管理，有利于合理利用地层能量，提高井控外围低渗区储量动用程度；分层压裂、多层合采可以在纵向上充分动用气井控制储量，增加气井最终累计产气量和稳产时间；地质研究与地震相结合，是提高储集层预测精度和钻井成功率的技术关键；降低成本，争取优惠政策也是提高经济效益的有效途径。     

Time Characterization of High Density Gas Jet from a Pulsed Supersonic Nozzle via Laser Produced Plasma

A high-density gas jet supersonic nozzle is reported in this paper. The jitter and actuation time of the nozzle is determined by the pin discharge and laser spark radiation respectively. The jitter time of the nozzle is within 10μs with the backing pressure as high as 25 bar. With a nanosecond laser pulse focused on the gas jet about 1 mm below the nozzle, the actuation time is calculated to be about 15 ms by detecting the laser produced spark radiation, which reveals the existence of the gas jet and the relative gas density evolving with time. Consequently the gas density is estimated to be well above 10^19 cm^-3, compared with theoretical simulations from the nozzle parameters.     

Quasi-Chun-Ching Shih''''s Fractional Fourier Transform with Periodicity of 2,3 and M

Based on Chun-Ching Shih's idea, the basic transform was substituted and the quasi-ChunChing Shih's fractional Fourier transform with periodicity of 2, 3 and M was deduced. The two former transforms and the Chun-Ching Shih's fractional Fourier transform were only the particular cases of quasiChun-Ching Shih's fractional Fourier transform with periodicity of M.     

基于非均匀星座的改进ARQ方案及其性能分析

本文针对调制阶数大于4的MPSK和MQAM调制，在重传中采用非均匀星座图和符号比特重新排序，提出了一种改进的ARQ方案。通过对AWGN信道下ARQ方案进行理论分析和数值仿真，表明基于非均匀星座的新方案在信道条件较差时能有效地提高重要比特的可靠性，若重传中结合符号比特重排和分组合并，则可使接收端解调合并后的比特可靠性趋于均匀且总体得到提高，从而有效地减少重传次数，提高系统的吞吐率。由于本文所提方案并不改变调制解调规则和数据分组长度，故容易实现和控制。     

Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator

The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.