Characterization and modeling of on-chip spiral inductors for Si RFICs

The paper presents a complete characterization of on-chip inductors fabricated in BiCMOS technology. First, a study of the scaling effect of inductance on geometry and structure parameters is presented to provide a clear guideline on inductor scaling with suitable quality factors. The substrate noise analysis and noise reduction techniques are then investigated. It is shown that floating well can improve both quality factor and noise elimination by itself under 3 GHz and together with a guard ring above 3 GHz. Finally, for accurate circuit simulations, a new inductor model is developed for predicting the skin effect and eddy effect and associated quality factor and inductance.     

Design and Implementation of a Reconfigurable Mobile Game Controller on Smartphone

Expansion of games industry came in modern life, accompanied with innovative features in a game controller. Nowadays mobile industry is booming with the expansion of the variety of novel technologies, such as the use of 3D accelerometer sensors, high resolution cameras, the capability of connecting to wireless networks and so on. Therefore, a smartphone can be added with the game control functions to become a mobile game controller. In this paper, we propose the design and implementation of making a mobile phone as a game controller using User Datagram Protocol socket programming. This system is developed by Java 2 Standard Edition and Google Android Software Development Kits which has already provided sensor and multi-touch APIs. We successfully realize a reconfigurable mobile game controller on a mobile smartphone to interact with the existing digital games by mapping control functions on the server. Acceptable performance is shown to validate the effectiveness of our solution.     

Microwave-crystallization of amorphous silicon film using carbon-overcoat as susceptor

Crystallization of amorphous silicon (a-Si:H) film is extremely important in many aspects of electronic devices and has been heavily explored. We demonstrate that microwave irradiation, 200 W, is able to fast-crystallize a-Si:H film using as susceptor carbon-overcoat which contains graphite and carbon nano-tube. X-ray diffraction and Raman spectra reveal that nearly full crystallization is reached within 90 s. Microwave absorption by the carbon-overcoat generates thermal energy which heats up a-Si:H film to a threshold temperature 440 ± 10 °C required for initiation of microwave crystallization. Dielectric properties of a-Si:H film facilitate its self-heating and nucleation of Si crystallites at above the threshold temperature. This method is extendable to fast-crystallize a-Si:H film on a remote and large-area basis.     

Metal nanocrystal memory with sol-gel derived HfO2 high-κ tunnel oxide

An all-solution processed metal-oxide-semiconductor (MOS) capacitor structure containing gold (Au) nanoparticles (NPs) within HfO₂ high-κ oxide was fabricated. The ultra-thin (~ 10 nm) HfO₂ high-κ tunnel oxide layer was prepared by sol-gel process and showed good electrical properties, which were critical to superior memory property of the MOS structure. Au NPs with particle size of about 3.3 nm were synthesized by chemical reduction method and then self-assembled onto HfO₂ tunnel oxide. Finally, a Si/HfO₂/Au NPs/HfO₂ memory structure was constructed after the substrate had been covered with a sol-gel-derived HfO₂ control oxide layer (~ 13 nm). By utilizing high-quality HfO₂ as tunnel oxide, the MOS structure containing Au NPs showed memory effect even at a low voltage of ± 3 V. Although its memory window was only 0.8 V by a swapping voltage between ± 5 V, the MOS showed desirable retention characteristics. Therefore, we have fabricated nanocrystal memory device with sol-gel derived HfO₂ high-k tunnel oxide which are attractive for low operation voltage non-volatile memory applications.     

Evaluation of friction coefficient using indentation model of Brinell hardness test for sheet metal forming

This work presents an indentation model of the Brinell hardness test, which is a rigid ball-deformable plane contact model (RB-DP model), to elucidate the sliding friction mechanism of sheet metal forming. In the proposed model, the friction force can be defined as a combination of shear (shearing effect) and plough (ploughing effect) forces. The real contact area ratio α is determined from the RBDP model under sliding condition. Moreover, the lateral contact area ratio A _c /A _r can be specified as a function of the real contact area ratio α. Based on Meyer’s law and Hertz contact problem, the maximum contact area ratio α _u , a limiting condition of the real contact area ratio α, can be described as a function of the strain hardening exponent n. Additionally, a limiting condition applies: the strain hardening exponent n must be less than 0.64 in the present model. The present friction model reveals that the friction coefficient μ _d is a function of strain hardening exponent n, the real contact area ratio α and the maximum contact area ratio α _u . The calculated friction coefficient μ _d agrees with the published experimental results.     

Mechanical,thermal, and morphological properties of injection molded poly(lactic acid)/SEBS‐g‐MAH/organo‐montmorillonite nanocomposites

Poly(lactic acid)/organo‐montmorillonite (PLA/OMMT) nanocomposites toughened with maleated styrene‐ethylene/butylene‐styrene (SEBS‐g‐MAH) were prepared by melt‐compounding using co‐rotating twin‐screw extruder followed by injection molding. The dispersibility and intercalation/exfoliation of OMMT in PLA was characterized using X‐ray diffraction and transmission electron microscopy (TEM). The mechanical properties of the PLA nanocomposites was investigated by tensile and Izod impact tests. Thermogravimetric analyzer and differential scanning calorimeter were used to study the thermal behaviors of the nanocomposite. The homogenous dispersion of the OMMT silicate layers and SEBS‐g‐MAH encapsulated OMMT layered silicate can be observed from TEM. Impact strength and elongation at break of the PLA nanocomposites was enhanced significantly by the addition of SEBS‐g‐MAH. Thermal stability of the PLA/OMMT nanocomposites was improved in the presence of SEBS‐g‐MAH. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2012     

Effect of Particle-Size Distribution on the Microstructural Evolution in the Intermediate Stage of Sintering

The effect of particle-size distribution on microstructural evolution in the intermediate stage of sintering of powder compacts was investigated. The evolution of pore channels was dominated by particle-size distribution but independent of sintering temperature. Moreover, a powder compact with a fine particle and uniform size distribution could prolong the intermediate stage of sintering, which in turn effectively inhibited grain growth. The mechanisms of evolution and pinch off of the pore channels of the powder compact with different particle-size distributions were discussed.     

Identification of the protein 4.1 binding interface on glycophorin C and p55, a homologue of the Drosophila discs-large tumor suppressor protein

Protein 4.1 is the prototype of a family of proteins that include ezrin, talin, brain tumor suppressor merlin, and tyrosine phosphatases. All members of the protein 4.1 superfamily share a highly conserved N-terminal 30-kDa domain whose biological function is poorly understood. It is believed that the attachment of the cytoskeleton to the membrane may be mediated via this 30-kDa domain, a function that requires formation of multiprotein complexes at the plasma membrane. In this investigation, synthetically tagged peptides and bacterially expressed proteins were used to map the protein 4.1 binding site on human erythroid glycophorin C, a transmembrane glycoprotein, and on human erythroid p55, a palmitoylated peripheral membrane phosphoprotein. The results show that the 30-kDa domain of protein 4.1 binds to a 12-amino acid segment within the cytoplasmic domain of glycophorin C and to a positively charged, 39-amino acid motif in p55. Sequences similar to this charged motif are conserved in other members of the p55 superfamily, including the Drosophila discs-large tumor suppressor protein. Our data provide new insights into how protein 4.1, glycophorin C, p55, and their non-erythroid homologues, interact with the cytoskeleton to exert their physiological effects.     

Sequencing mixed-model assembly lines with genetic algorithms

This research introduces the use of an artificial-intelligence based technique, genetic algorithms (GA), to solve mixed-model assembly-line sequencing problems. This paper shows how practitioners can comfortably implement this approach to solve practical problems. A substantial example is given for which GA produces a solution in just a matter of seconds that improves upon Toyota's Goal Chasing Algorithm. The new method is then investigated on a test bed of 80 problems. Results indicate GA generates an improved sequence over Goal Chasing on 50 of the problems and also shows a performance advantage of 2% across all 80 problems using Toyota's variability of parts consumption criterion. The paper concludes that further investigation to fine tune the GA methodology is warranted. It also points out that the GA approach can readily be used by practitioners to address a variety of managerial goals concurrently, such as inventory and work load equalization.     

An economic discrete replacement policy for a shock damage model with minimal repairs

A discrete replacement model for a repairable system which is subject to shocks and minimal repairs is discussed. Such shocks can be classified, depending on its effect to the system, into two types: Type I and Type II shocks. Whenever a type II shock occurs causes the system to go into failure, such a failure is called type II failure and can be corrected by a minimal repair. A type I shock does damage to the system in the sense that it increases the failure rate by a certain amount and the failure rate also increases with age due to aging process without external shocks; furthermore, the failure occurred in this condition is called type I failure. The system is replaced at the time of the first type I failure or the n-th type Il failure, whichever occurs first. Introducing costs due to replacement and mininal repairs, the long-run expected cost per unit time is derived as a criterion of optimality and the optimal number n∗ found by minimizing that cost. It is shown that, under certain conditions, there exists a finite and unique optimal number n∗.