PBL教学模式在“软件工程”课程教学中的应用

由于学科特性与教学要求,“软件工程”课程教学对实践性和系统性的要求极高。PBL教学模式作为一种自主式教学的新型模式,在教育领域受到广泛关注。文章基于PBL教学模式的特点及优势,结合“软件工程”课程教学改革趋势及教学实践中面临的主要困境,系统分析了PBL教学模式应用于“软件工程”课程教学的途径,以期为促进“软件工程”的课程教学改革及教学质量提高提供参考及借鉴。     

Evaluation of the Thermal Comfort of a Thermoelectric Ceiling Cooling Panel (TE-CCP) System

This present work evaluates the cooling performance and thermal comfort of a thermoelectric ceiling cooling panel (TE-CCP) system composed of 36 TE modules. The cold side of the TE modules was fixed to an aluminum ceiling panel to cool a test chamber of 4.5 m³ volume, while a copper heat exchanger with circulating cooling water at the hot side of the TE modules was used for heat release. Thermal acceptability assessment was performed to find out whether the indoor environment met the ASHRAE Standard-55's 80% acceptability criteria. The standard was met with the TE-CCP system operating at 1 A of current flow with a corresponding cooling capacity of 201.6 W, which gives the COP of 0.82 with an average indoor temperature of 27°C and 0.8 m/s indoor air velocity.     

Nanoparticles of the Lead-free Solder Alloy Sn-3.0Ag-0.5Cu with Large Melting Temperature Depression

Due to the toxicity of lead (Pb), Pb-containing solder alloys are being phased out from the electronics industry. This has lead to the development and implementation of lead-free solders. Being an environmentally compatible material, the lead-free Sn-3.0Ag-0.5Cu (wt.%) solder alloy is considered to be one of the most promising alternatives to replace the traditionally used Sn-Pb solders. This alloy composition possesses, however, some weaknesses, mainly as a result of its higher melting temperature compared with the Sn-Pb solders. A possible way to decrease the melting temperature of a solder alloy is to decrease the alloy particle size down to the nanometer range. The melting temperature of Sn-3.0Ag-0.5Cu lead-free solder alloy, both as bulk and nanoparticles, was investigated. The nanoparticles were manufactured using the self-developed consumable-electrode direct current arc (CDCA) technique. The melting temperature of the nanoparticles, with an average size of 30 nm, was found to be 213.9°C, which is approximately 10°C lower than that of the bulk alloy. The developed CDCA technique is therefore a promising method to manufacture nanometer-sized solder alloy particles with lower melting temperature compared with the bulk alloy.     

An Investigation of Microstructure and Microhardness of Sn-Cu and Sn-Ag Solders as Functions of Alloy Composition and Cooling Rate

The microstructure and microhardness of Sn-xAg and Sn-xCu solders were investigated as functions of alloy composition and cooling rate. The Ag compositions examined varied from 0.5 wt.% to 3.5 wt.%, while Cu varied from 0.5 wt.% to 2.0 wt.%. Three cooling rates were employed during solidification: 0.02°C/s (furnace cooling), about 10°C/s (air cooling), and 100°C/s or higher (rapid solidification). Sn grain size and orientation were observed by cross-polarization light microscopy and electron-backscattering diffraction (EBSD) techniques. The microhardness was measured to correlate the mechanical properties with alloy compositions and cooling rates. From this study, it was found that both alloy composition and cooling rate can significantly affect the Sn grain size and hardness in Sn-rich solders. The critical factors that affect the microstructure–property relationships of Sn-rich solders are discussed, including grain size, crystal orientation, dendrite cells, twin boundaries, and intermetallic compounds (IMC).     

外太空有源假目标的运动学特性

弹道导弹突防过程中释放的有源干扰装置能够产生在能量、波形和相位调制等方面与目标回波高度逼近的假目标,这些假目标会共享雷达信号处理器的相干处理增益,使得传统的信号处理鉴别方法失效,并在数据处理层形成大量虚假航迹。该文从理论上分析了外太空有源假目标的运动学特性,推导了其在典型坐标系下的运动方程,揭示了有源假目标在运动学特性上和实体目标间的根本差异。首先,建立了统一的数学描述模型,推导了假目标在雷达站直角坐标系、雷达站球坐标系和地心坐标系下的运动方程;其次,根据运动方程分析了假目标的轨道、速度和加速度特性;最后,研究了相关因素对假目标运动学特性的影响。该文的分析结果可以为基于运动学信息鉴别有源假目标的系列方法提供理论指导。     

<Emphasis Type="Italic">Ab Initio</Emphasis> Studies of Hydrogen Defects in CdTe

Using first-principles calculations based on density functional theory, we have investigated the nature of H defects in CdTe. The formation energy calculations indicate that the ground state position of the H inside the CdTe lattice depends on charge state: the lowest energy position for H⁰ and H⁺ is at the bond center site, while H⁻ prefers the tetrahedral interstitial site with Cd nearest neighbors (T_Cd). We find that H in CdTe acts as an amphoteric impurity. In p-type samples, H is in a positive charge state, acting as a donor to neutralize the free holes in the valence band, and in n-type samples H acquires an electron, compensating the donors in the sample.     

Capacity and SER Analysis of MIMO MRC Systems in an Interference-Limited Environment

The effect of co-channel interference (CCI) is considered in multiple-input multiple-output (MIMO) systems employing maximal ratio combining (MRC) under independent and identically distributed Rayleigh fading. Closed-form capacity and symbol error rate expressions are presented to evaluate the performance without any numerical integrations or statistical simulations. The analytical results are compared with Monte Carlo simulations and the good agreement is obtained.

Effects of Ball-Milling Atmosphere on the Thermoelectric Properties of TAGS-85 Compounds

Inspired by the high ZT value lately attained in Ar-protected ball-milled nanocrystalline p-BiSbTe bulk alloy, we report herein an investigation of the effects of ball-milling atmosphere on the thermoelectric (TE) properties of the traditional TE material (GeTe)₈₅(AgSbTe₂)₁₅ (TAGS-85). TAGS-85 samples were prepared via a melting–quenching–annealing process, and then ball-milled in different atmospheres and subsequently densified using a spark plasma sintering technique. The Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient were measured as a function of temperature from 10 K to 310 K. It was found that different ball-milling atmospheres, i.e., air, liquid N₂ (LN₂), and Ar, profoundly affected the TE properties. A state-of-the-art figure of merit ZT ≈ 0.30 was attained at 310 K in the Ar-ball milled sample. The results are discussed in terms of the carrier concentration, mobility, crystallinity, and the grain boundary scattering.     

Three-Stage Thin-Film Superlattice Thermoelectric Multistage Microcoolers with a Δ<Emphasis Type="Italic">T</Emphasis><Subscript>max</Subscript> of 102 K

Thin-film Bi₂Te₃- and Sb₂Te₃-based superlattice (SL) thermoelectric (TE) devices are an enabling technology for high-power and low-temperature applications, which include low-noise amplifier cooling, electronics hot-spot cooling, radio frequency (RF) amplifier thermal management, and direct sensor cooling. Bulk TE devices, which can pump heat loads on the order of 10 W/cm², are not suitable in these applications due to their large size and low heat pumping capacity. Recently, we have demonstrated an external maximum temperature difference, ΔT _max, as high as 58 K in an SL thin-film p–n couple. This state-of-the-art couple exhibited a cold-side minimum temperature, T _cmin, of −30.9°C. We regularly attain ΔT _max values in excess of 53 K, in spite of the many significant electrical and thermal parasitics that are unique to thin-film devices. These measurements do not use any complex thermal management at the heat sink to remove the heat flux from the TE device’s hot side. We describe here multistage SL cooling technologies currently being developed at RTI that can provide useful microcooling cold-side temperatures of 200 K. This effort includes a three-stage module employing independently powered stages which produced a ΔT _max of 101.6 K with a T _cmin of −75°C, as well as a novel two-wire three-stage SL cascade which demonstrated a T _cmin of −46°C and a ΔT _max of nearly 74 K. These RTI modules are only 2.5 mm thick, significantly thinner than a similar commercial three-stage module (5.3 mm thick) that produces a ΔT _max of 96 K. In addition, TE coolers fabricated from these thin-film SL materials perform significantly better than the extrapolated performance of similar thickness bulk alloy materials.     

汽车电压调节器集成电路芯片版图设计

介绍了基于4μm双极型对通隔离工艺的汽车电压调节器功率集成电路芯片的版图设计。版图设计的主要出发点是高精度、大调整电流和高可靠性三方面。版图中各模块采用了热对称设计和等温线设计,关键元件的匹配采用了中心对称设计,大功率调整管采用了宽发射极窄接触条和圣诞树型结构相结合的方案。芯片测试结果表明,电压调节器的调节精度为14.2±0.15V,最大调节电流为5A,较好地实现了预定电路功能。芯片成品率达80%。