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41.
Xing Gu Shariar Sabuktagin Ali Teke Daniel Johnstone Hadis Morkoç Bill Nemeth Jeff Nause 《Journal of Materials Science: Materials in Electronics》2004,15(6):373-378
ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. We developed a thermal treatment method to eliminate surface damage on the 0 face of ZnO (0 0 0 1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (0 0 0 1) annealed at 1050 °C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution X-ray diffraction measurements have been employed to investigate the effect of annealing on ZnO substrates. 相似文献
42.
通过适当的工艺措施,采用Bridgman法生长了直径为30mm的X射线及γ射线探测器级的Cd.9Zn0.1Te晶锭.测试结果表明:该晶锭结晶质量良好,位错密度低,成分均匀,杂质含量低,红外透过率和电阻率都十分接近本征Cd.9Zn0.1Te的值.并从晶体的生长特性、缺陷和杂质的角度,分析了生长高性能晶体的条件,研究了生长Cdl-xZnxTe晶体的x值与缺陷和杂质浓度之间的关系. 相似文献
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多排数翅片管空冷器风阻特性的数值模拟 总被引:1,自引:0,他引:1
本文对多排数翅片管空冷器空气侧的风阻特性进行了数值模拟.利用商用软件Fluent进行数值计算,结合经验公式和已有的实验数据,分析了不同入口风速下,阻力的变化规律以及流动阻力和温度变化对模拟计算的影响. 相似文献
46.
Flowers G.T. Fei Xie Bozack M.J. Malucci R.D. 《Components and Packaging Technologies, IEEE Transactions on》2004,27(1):65-71
Single frequency vibration tests were used to induce fretting corrosion in tin alloy plated contacts. The samples used in this study were connectors consisting of 25 pairs of mated pin and socket contacts. Experimental results for a variety of vibration levels, frequencies, and wiring tie-off lengths are presented. The experiments consisted of running a series of vibration tests at each frequency where the excitation level was stepped through a range of g-levels. During each test run contact resistance was monitored as a performance characteristic. The results exhibit threshold behavior at each frequency for the onset of fretting degradation. Typically a plateau region was observed where similar g-levels produced similar fretting rates. It was also found that outside the plateau region the g-levels varied according to the dynamic behavior of the mechanical system. In addition, a transfer matrix model was used to analyze these results. An empirical fit of the data correlated well with the model when damping was used. This analysis revealed the importance of the bending moment induced at the contact interface as a result of excitation levels and tie-off configurations. Consequently, it is concluded that dynamic response of the mechanical system under various g-levels and tie off configurations can greatly impact the performance of a connector system subjected to vibration stresses. 相似文献
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Zheng Jiao Minghong Wu Jianzhong Gu Zheng Qin 《IEEE sensors journal》2003,3(4):435-438
Zinc ferrite is a promising sensor material. In this paper, thin films of nanocrystalline zinc ferrite were deposited on alumina substrates by nebulization of a 0.01-M solution of a mixture of ZnCl/sub 2/ and FeCl/sub 3/ in ethanol (Zn:Fe=1:2) followed by pyrolysis and annealing in flowing air. The resulting films were characterized by X-ray diffraction and scanning electron microscopy, and the gas-sensing properties of as-deposited films were also investigated. 相似文献
49.
Sang-Hoon Lee Dae Hwan Kim Kyung Rok Kim Jong Duk Lee Byung-Gook Park Young-Jin Gu Gi-Young Yang Jeong-Taek Kong 《Nanotechnology, IEEE Transactions on》2002,1(4):226-232
A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures. 相似文献
50.
王飞 《理化检验(物理分册)》2003,39(12):636-638,650
为分析研究某特钢厂用户投诉的原因及存在的问题,统计了其两年间的弹簧钢棒线材用户质量投诉,从缺陷类型及生产过程控制进行了分析,重点对多起断裂原因不明的投诉进行了深入的失效研究。结果表明,弹簧钢生产厂在设备工艺、过程控制和管理中存在很多不足,加上用户的使用工艺、材料的内外质量和规格等综合因素导致了材料的断裂失效。 相似文献