The Possibility of Dense Materials Based on Obtaining an AlN–SiC Solid Solution by Self-Propagating High-Temperature Synthesis Gasostating

Russian Journal of Non-Ferrous Metals - The synthesis and sintering of the (AlN)x(SiC)1 – x solid solution have been studied under conditions of self-propagating high-temperature synthesis...     

Dry Friction Behavior of Barite-Containing Composites in a Pair with Steel

Refractories and Industrial Ceramics - The article is devoted to the preparation of ecologically clean composites by powder metallurgy and the study of tribological properties. Tribological tests...     

3D Investigation of 8-nm Tapered n-FinFET Model

The miniaturization has become a key word for advanced integrated circuits over the last few years. It is within this context that the fin field effect tra     

A practical Equivalent Electrical Circuit model for Proton Exchange Membrane Fuel Cell (PEMFC) systems

An alternative Equivalent Electrical Circuit for Proton Exchange Membrane Fuel Cells is modelled in this study. Both I–V characteristics and H₂ consumptions corresponding to generated power under load and no-load conditions are investigated. For this purpose, H₂ consumptions and I–V characteristics of three different sized PEMFCs are tested. There is a very good harmony between the model results and measured values (relative error %0.7, %6.4 and %2.5 for FC-A, FC-B and FC-C respectively). In the proposed model current passes only on parallel resistance and not on serial resistance at no-load condition. Thus, a FC with higher parallel resistance should be preferred. Another key output of this study is that based on the proposed model, performance comparison of FCs can be performed with the parameters defined in this work. Proposals made in this study can easily be used for performance analysis of FCs under for both steady state and transient analysis.     

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light-emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of parameters over the wafer. The setup includes the closed-cycle helium cryogenic station, LCR meter, and temperature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light-emitting diodes, are presented.     

Irreversible deformation and the superplasticity of a TN-1 alloy during thermal cycling through the martensitic transformations ranges under loading

The influence of the thermal cycling conditions on the thermal-cycling creep of a TN-1 alloy and the related irreversible deformations is studied. The conditions under which an anomalous increase in the irreversible deformations begins are determined. The structural mechanism of the irreversible deformations of an equiatomic alloy is shown to be analogous to the structural mechanism of metal creep at high temperatures: it predominantly has a dislocation character. It is proposed to use the effect of anomalous increase in the deformation of materials with reversible martensitic transformations for forming parts made of these materials at low temperatures.