全文获取类型
收费全文 | 294662篇 |
免费 | 1194篇 |
国内免费 | 694篇 |
专业分类
电工技术 | 5086篇 |
综合类 | 186篇 |
化学工业 | 46085篇 |
金属工艺 | 11952篇 |
机械仪表 | 8687篇 |
建筑科学 | 6975篇 |
矿业工程 | 1849篇 |
能源动力 | 6930篇 |
轻工业 | 26529篇 |
水利工程 | 3320篇 |
石油天然气 | 7310篇 |
武器工业 | 16篇 |
无线电 | 31862篇 |
一般工业技术 | 57519篇 |
冶金工业 | 52287篇 |
原子能技术 | 7827篇 |
自动化技术 | 22130篇 |
出版年
2021年 | 2240篇 |
2019年 | 2146篇 |
2018年 | 3706篇 |
2017年 | 3647篇 |
2016年 | 4014篇 |
2015年 | 2533篇 |
2014年 | 4297篇 |
2013年 | 12183篇 |
2012年 | 6924篇 |
2011年 | 9354篇 |
2010年 | 7668篇 |
2009年 | 8724篇 |
2008年 | 9104篇 |
2007年 | 8949篇 |
2006年 | 7951篇 |
2005年 | 7421篇 |
2004年 | 6927篇 |
2003年 | 6675篇 |
2002年 | 6758篇 |
2001年 | 6592篇 |
2000年 | 6246篇 |
1999年 | 6308篇 |
1998年 | 14889篇 |
1997年 | 11155篇 |
1996年 | 8682篇 |
1995年 | 6621篇 |
1994年 | 5992篇 |
1993年 | 5902篇 |
1992年 | 4586篇 |
1991年 | 4501篇 |
1990年 | 4364篇 |
1989年 | 4385篇 |
1988年 | 4309篇 |
1987年 | 3678篇 |
1986年 | 3644篇 |
1985年 | 4217篇 |
1984年 | 4027篇 |
1983年 | 3674篇 |
1982年 | 3465篇 |
1981年 | 3587篇 |
1980年 | 3471篇 |
1979年 | 3403篇 |
1978年 | 3484篇 |
1977年 | 3957篇 |
1976年 | 5074篇 |
1975年 | 3196篇 |
1974年 | 3046篇 |
1973年 | 3046篇 |
1972年 | 2664篇 |
1971年 | 2489篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
91.
92.
Yu Jin Joshi S.G. 《IEEE transactions on ultrasonics, ferroelectrics, and frequency control》1996,43(3):491-494
It is found that an acoustic wave which is nearly polarized in the shear horizontal (SH) direction can propagate along the X axis of a Z-cut lithium niobate plate if the ratio h/λ, where h=plate thickness and λ=acoustic wavelength, is less than about 0.5. Attractive properties of this quasi-SH wave include: (1) phase velocity nearly constant for all values of h/λ; (2) ability to propagate in contact with a liquid medium; and (3) electromechanical coupling coefficient as high as 0.15. These properties make the wave attractive for use in a variety of sensor and signal processing applications. An example of sensor applications is illustrated by using the wave to measure conductivity of liquids (aqueous KCl solution). The frequency of a 12-MHz quasi-SH mode oscillator fabricated on a 0.48 wavelength thick Z-X lithium niobate plate is found to vary by more than 80 kHz for variation in KCI concentration from 0 to 0.15% 相似文献
93.
94.
G Goleburn 《Canadian Metallurgical Quarterly》1997,45(4):332-3; author reply 334-8
95.
Bez R. Cantarelli D. Moioli L. Ortolani G. Servalli G. Villa C. Dallabora M. 《Electron Device Letters, IEEE》1998,19(2):37-39
A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles 相似文献
96.
MineSet aids knowledge discovery and supports decision making based on relational data. It uses visualization and data mining to arrive at interesting results. Providing diverse visualization tools lets users choose the most appropriate method for a given problem. The client-server architecture performs most of the computationally intensive tasks on a server, while the processed results return to the client for visualization. The paper discusses MineSet database visualization and data mining visualization 相似文献
97.
Candelier P. Mondon F. Guillaumot B. Reimbold G. Martin F. 《Electron Device Letters, IEEE》1997,18(7):306-308
A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O2 anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs 相似文献
98.
99.
100.