Influence of residual solvent on physical and chemical properties of amorphous glassy polymer films

One of the most important areas of current research is the study of the influence of the prehistory of samples of amorphous glassy polymers on their physical and chemical properties. The study of structural changes by high temperature IR spectroscopy compared with of quantum chemical calculations allows for an understanding of the mechanism and nature of such processes. The changes in the structure of the polymer chain depending on the type of solvent used in the formation of the films are demonstrated using the examples of several different classes of polymers. In turn, the impact of such changes in the structure on the physical and chemical properties of the polymer films is demonstrated. © 2013 Society of Chemical Industry     

I2-doped and pyrrole ring-iodinated semi-conducting oligomers of N-vinyl-3-alkyl-2-phenylpyrroles

I₂-doped and pyrrole ring-iodinated semi-conducting oligomers of N-vinyl-3-alkyl-2-phenylpyrroles have been synthesized by free-radical polymerization of the above monomers (AIBN, 2–5 wt%, 60–80 °C) and further exposure of the oligomers obtained to I₂ vapor. The parent oligomers exhibit paramagnetic and fluorescent properties and stable up to 300–370 °C.     

Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing

Results are presented for minority carrier lifetime in n-type molecular beam epitaxy Hg_1−xCd_xTe with x ranging from 0.2 to 0.6. It was found that the lifetime was unintentionally degraded by post-growth annealing under Hg saturated conditions in a H₂ atmosphere that was both time and temperature dependent. This effect was minimal or non-existent for x∼0.2 material, but very strong for x ≥ 0.3. Hydrogen was identified as responsible for this degradation. Identical annealing in a He atmosphere avoids this degradation and results in neartheoretical lifetime values for carrier concentrations as low 1 × 10¹⁵ cm⁻³ in ≥0.3 material. Modeling was carried out for x∼0.2 and x∼0.4 material that shows the extent to which lifetime is reduced by Shockley-Real-Hall recombination for carrier concentrations below 1 × 10¹⁵ cm⁻³, as well as for layers annealed in H₂. It appears that annealing in H₂ results in a deep recombination center in wider bandgap HgCdTe that lowers the lifetime without affecting the majority carrier concentration and mobility.     

Gold nanorods with a hematoporphyrin-loaded silica shell for dual-modality photodynamic and photothermal treatment of tumors in vivo

Nanocomposites （NCs） consisting of a gold nanorod core and a mesoporous silica shell doped with hematoporphyrin （HP） have been fabricated in order to improve the efficiency of cancer treatment by combining photothermal and photodynamic therapies （PDT ＋ PTT） in vivo. In addition to the long-wavelength plasmon resonance near 810-830 nm, the fabricated NCs exhibited a 400-nm absorbance peak corresponding to bound HP, generated singlet oxygen under 633-nm excitation near the 632.5-nm Q-band, and produced heat under a 808-nm near-infrared （NIR） laser irradiation. These modalities were used for a combined PDT ＋ PTT treatment of large （about 3 cm3） solid tumors in vivo with a xenorafted tumor rat model. NCs were directly injected into tumors and irradiated simultaneously with 633-nm and 808-nm lasers to stimulate the combined photodynamic and photothermal activities of NCs. The efficiency of the combined therapy was evaluated by optical coherence tomography, histological analysis, and by measurements of the tumor volume growth during a 21-day period. The NC-mediated PDT led to weak changes in tissue histology and to a moderate 20% decrease in the tumor volume. In contrast, the combined PDT ＋ PTT treatment resulted in the large-area tumor necrosis and led to dramatic decrease in the tumor volume.     

Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance

In the past several years, we have made significant progress in the growth of CdTe buffer layers on Si wafers using molecular beam epitaxy (MBE) as well as the growth of HgCdTe onto this substrate as an alternative to the growth of HgCdTe on bulk CdZnTe wafers. These developments have focused primarily on mid-wavelength infrared (MWIR) HgCdTe and have led to successful demonstrations of high-performance 1024×1024 focal plane arrays (FPAs) using Rockwell Scientific’s double-layer planar heterostructure (DLPH) architecture. We are currently attempting to extend the HgCdTe-on-Si technology to the long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) regimes. This is made difficult because the large lattice-parameter mismatch between Si and CdTe/HgCdTe results in a high density of threading dislocations (typically, >5E6 cm⁻²), and these dislocations act as conductive pathways for tunneling currents that reduce the R_oA and increase the dark current of the diodes. To assess the current state of the LWIR art, we fabricated a set of test diodes from LWIR HgCdTe grown on Si. Silicon wafers with either CdTe or CdSeTe buffer layers were used. Test results at both 78 K and 40 K are presented and discussed in terms of threading dislocation density. Diode characteristics are compared with LWIR HgCdTe grown on bulk CdZnTe.     

Characteristics and uniformity of group V implanted and annealed HgCdTe heterostructure

This work presents characterization of implanted and annealed double layer planar heterostructure HgCdTe for p-on-n photovoltaic devices. Our observation is that compositional redistribution in the structure during implantation/ annealing process differs from that expected from classical composition gradient driven interdiffusion and impacts the placement of the electrical junction with respect to the metallurgical heterointerface, which in turn affects quantum efficiency and R_oA. The observed anomalous interdiffusion results in much wider cap layers with reduced composition difference between base and cap layer composition. The compositional redistribution can, however, be controlled by varying the material structure parameters and the implant/anneal conditions. Examples are presented for dose and implanted species variation. A model is proposed based on the fast diffusion in the irradiation induced damage region of the ion implantation. In addition, we demonstrate spatial uniformity obtained on molecular beam epitaxy (MBE) material of the compositional and implanted species profile. This reflects spatial uniformity of the ion implantation/annealing Processes and of the MBE material characteristics.     

Reconstructive and plastic microsurgery in the treatment of combat trauma to the extremities

In the department of microsurgery of A.A. Vishnevsky Central Hospital the transplantation and transposition of the at the gunshot injuries of the extremities have begun to execute since 1990. For this time 94 surgical interventions have been conducted at 88 wounded: 57 transplantations and 37 transpositions of the bloody tissues. The transplantation and transposition of the vascularized complexes of tissues with application of microsurgical technique is the effective method of the treatment of the wounded in the extremities. In the conditions of the local armed conflicts it is necessary to provide deployment of the department of microsurgery at stages of the specialized medical care.     

Ten-inch molecular beam epitaxy production system for HgCdTe growth

Growth of Hg_1−xCd_xTe by molecular beam epitaxy (MBE) has been under development since the early 1980s at Rockwell Scientific Company (RSC), formerly the Rockwell Science Center; and we have shown that high-performance and highly reproducible MBE HgCdTe double heterostructure planar p-on-n devices can be produced with high throughput for various single- and multiplecolor infrared applications. In this paper, we present data on Hg_1−xCd_xTe epitaxial layers grown in a ten-inch production MBE system. For growth of HgCdTe, standard effusion cells containing CdTe and Te were used, in addition to a Hg source. The system is equipped with reflection high energy electron diffraction (RHEED) and spectral ellipsometry in addition to other fully automated electrical and optical monitoring systems. The HgCdTe heterostructures grown in our large ten-inch Riber 49 MBE system have outstanding structural characteristics with etch-pit densities (EPDs) in the low 10⁴ cm⁻² range, Hall carrier concentration in low 10¹⁴ cm⁻³, and void density <1000 cm². The epilayers were grown on near lattice-matched (211)B Cd_0.96Zn_0.04Te substrates. High-performance mid wavelength infrared (MWIR) devices were fabricated with R₀A values of 7.2×10⁶ Ω-cm² at 110 K, and the quantum efficiency without an antireflection coating was 71.5% for cutoff wavelength of 5.21 μm at 37 K. For short wavelength infrared (SWIR) devices, an R₀A value of 9.4×10⁵ Ω-cm² at 200 K was obtained and quantum efficiency without an antireflection coating was 64% for cutoff wavelength of 2.61 μm at 37 K. These R₀A values are comparable to our trend line values in this temperature range.     

Bezold-Brücke effect in normal trichromats and protanopes

Luminance-dependent change in color appearance--the Bezold-Brücke effect--was investigated in protanopes and related to that in normal trichromats. Spectral lights were presented at six luminance levels covering mesopic, low, and high photopic vision-across three log steps from 0.76 to 760 Td. To judge color appearance, a variant of the color-naming method was used with four primary basic color terms and a "White" response. This modification enabled us to examine apparent saturation changes along with the Bezold-Brücke hue shift. Color-naming frequency functions were acquired across ten presentations of each stimulus. Since protanopes name colors idiosyncratically, changes in color appearance cannot be quantified directly from the color-naming functions. To circumvent the difficulty, these functions were transformed into color similarity measures for analysis with multidimensional scaling purported to reconstruct individual color spaces. In these, luminance-dependent shifts in color appearance were represented by means of geometric displacements. We found that for normal trichromats, shifts measured in this way agreed with those derived in our study directly, and with the hue shifts reported in earlier studies. For protanopes, contrary to some models of dichromatic vision, changes in color appearance are significant and indicate superimposed shifts in hue and saturation. The results obtained for normal trichromats, especially for protanopes, imply that nonlinearity in the yellow-blue opponent system is insufficient to explain the Bezold-Brücke effect, given the nature of the saturation shift and the demonstrated divergence between unique hues and invariant hues.