浅析分户供热的计量

本文介绍了国外在供热分户计量方面的测定原理、手段和设备,费用分配原则,仪表与系统的配合和安装方式,并就其与国内系统的配合提出了建议。     

液化气铜片腐蚀原因及解决措施

本文就引起液化石油气（LPG）铜片腐蚀不合格的原因进行了分析，对JX－1A精脱硫剂工业应用效果进行了探讨，结果表明JX－1A精脱硫剂在解决了LPG铜片腐蚀不合格方面有很好的效果。     

25mm厚钢板产生层间撕裂的原因和防治

层间撕裂并非是厚板独有的质量问题 ,结合工程实例 ,分析 2 5mm厚低合金钢板产生层间撕裂的原因。通过对钢材的超声波探伤检测、化学成分分析和Z向性能检测 ,指出层间撕裂主要与节点设计不当和钢材内非金属夹杂物偏析、分层有关 ,并提出了预防措施。对产生裂纹的构件视严重情况提出了不同的修补处理方法     

Vibration control of a flexible structure using a hybrid mount

This paper presents vibration control of a flexible beam structure using a hybrid mount which consists of elastic rubber and piezoelectric stack actuator. After identifying stiffness and damping properties of the rubber and piezoelectric elements, a mechanical model of the hybrid mount is established. The mount model is then incorporated with the beam structure, and the governing equation of motion is obtained in a state space. A sliding mode controller is designed in order to actively attenuate the vibration of the beam structure subjected to high-frequency and small magnitude excitations. The controller is experimentally realized and measured control responses such as acceleration of the beam structure and force transmission through the hybrid mount are evaluated and presented in both frequency and time domains.     

山西铝厂锅炉水冷壁膨胀异常原因分析及对策

针对山西铝厂160t／h锅炉在实际运行中膨胀异常的问题，对不同的施工方法下，水冷壁膨胀量是否正常这一问题进行分析，找出了水冷壁膨胀异常的原因，并提出了解决对策。     

NMR束缚流体体积确定方法及其应用条件

NMR测井不能直接测定束缚流体饱和度（Swir）和束缚总流体（BVI）体积，而是根据T1分布和有效孔隙度（φe）间接确定。其精度取决于解释T2分布所选用的方法及其相关参数。NMR测井确定VBI方法有T21截止值方法，频谱BVI（简称SBVI）方法和BVI加权函数方法。     

预应力钢-混凝土组合梁的应用与研究

回顾了预应力钢 混凝土组合梁国内外应用与研究历史 ,分析了现有规范及理论的不足 ,并指出了有待解决的问题。     

低乙烯含量抗冲聚丙烯的结构表征

采用二甲苯为溶剂，将不同乙烯含量（５％￣１５％质量）的抗冲聚丙烯用特定程序进行分级，将各样品分为室温下可溶于甲苯和不可溶于甲苯的两部分。使用＾１３Ｃ－ＮＭＲ方法和ＦＴ－ＩＲ方法对各组分进行表征，明确了乙烯链段在聚丙烯链上的分布，并在此基础上提出了产生这种链结构的聚合工艺的特点。     

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.