MULTICARRIER DS—CDMA WITH ADAPTIVE MODULATION AND POWER ALLOCATION

Adaptive modulation and power allocation is introduced into the multicarrier DSCDMA system to improve the system performance and bandwidth efficiency.First,the system design appropriate for adaptive modulation and power allocation is given,then the algorithm of adaptive modulation and power allocation is applied.Simulation results demonstrate great performance improvement compared with the fixed modulated one.     

Exchange-correlation errors at harmonic and anharmonic orders: the case of bulk Cu

As an aid towards improving the treatment of exchange and correlation effects in electronic structure calculations, it is desirable to have a clear picture of the errors introduced by currently popular approximate exchange-correlation functionals. We have performed ab initio density functional theory and density functional perturbation theory calculations to investigate the thermal properties of bulk Cu, using both the local density approximation (LDA) and the generalized gradient approximation (GGA). Thermal effects are treated within the quasiharmonic approximation. We find that the LDA and GGA errors for anharmonic quantities are an order of magnitude smaller than for harmonic quantities; we argue that this might be a general feature. We also obtain much closer agreement with experiment than earlier, more approximate calculations.     

Electronic properties of magnetically doped nanotubes

Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr).     

Scheduling Algorithms for Packet-Oriented MAC Protocols in Wireless Multimedia Systems

Future generation wireless multimediacommunications will require efficient Medium AccessControl (MAC) protocols able to guarantee suitable Qualityof Service (QoS) levels for different traffic classes whileachieving a high utilization of radio resources. This paperproposes a new scheduling technique to be adopted at the MAClevel in wireless access systems, named Dynamic Scheduling-Time DivisionDuplexing (DS-TDD), that efficiently managesvideo, voice, Web and background traffics. A theoretical approachis proposed in this paper to evaluate the DS-TDD performance withvoice and Web traffics. Simulation results have permitted tohighlight the following promising characteristics of the DS-TDDscheme: (i) a high capacity of real-time traffics isattained with a QoS insensitive to Web and background trafficloads; (ii) a high throughput can be guaranteed whilepreserving the QoS levels of the different traffic classes;(iii) heavier downlink traffic loads do not modify the QoSof uplink traffics. Finally, extensive comparisons with differentscheduling schemes proposed in the literature have permitted tohighlight the better performanceof DS-TDD.     

Design Methodology and Area Sensitivity Analysis of Horizontal Subsurface Flow Constructed Wetlands

An approach is presented to satisfy the demand for simple criteria, guidelines and models for the preliminary sizing of horizontal subsurface flow (SF) constructed wetland systems. This approach eliminates time-consuming calculations and iterations by providing graphical solutions for wetland system sizing. Therefore, it can be used for the preliminary assessment of new or performance evaluation of existing subsurface flow constructed wetland systems. The validity of this methodology is checked with data from existing systems and is found to be quite satisfactory. This methodology is combined with simple equations predicting the maximum wetland capacity in summer, so as to assist designers in sizing installations in tourist areas with increased summer populations. Furthermore, based on this methodology, a sensitivity analysis is performed of the area requirements for wastewaters of various strengths and various design conditions and performance criteria. The results provide a useful overview to engineers and further simplify the design methodology of new subsurface flow constructed wetland systems.     

Profiling Voids Embedded in a Slab by a Non-Linear Model

In this paper, by applying a non linear model for the electromagnetic inverse scattering, a technique for the dielectric profiling of a planarly layered medium is investigated and applied to void localization and diagnostics inside a homogeneous lossless slab (one-dimensional geometry). Data are collected under plane wave multifrequency normal incidence. Suitable finite dimensional representations for the unknown functions are introduced and their influence on the model is discussed. The resulting functional equation is solved by the method of weighted residuals and the solution algorithm amounts to minimizing a non quadratic function, where particular attention is devoted to reduce the occurrence of local minima. Finally, the inversion algorithm is validated by applications to both simulated and experimental data.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

Interaction of triton X-100 on silica: A relationship between surface characteristics and adsorption isotherms

Adsorption of Triton X-100 on various silica substrates has been investigated. A number of solids, including a natural quartz, this quartz washed with HCl acid and subsequently heated at 1273 K; two aerosils and one Kieselgel silicas were studied. These solids exhibit surface areas in the range of 5 to 430 m² g^?1. All the Triton adsorption isotherms display an S-shape at the adsorption temperatures studied (298 and 308 K). It has been found that the pretreatments of natural quartz (by water washing, impurities removed by acid and/or high temperature calcination) affect considerably the amounts of TX-100 adsorbed. Measurements of surface composition have been made by X-ray photoelectron spectroscopy (XPS) with particular emphasis on the presence of impurities and on the number of OH groups at the surface of the samples. The nature of the surface hydroxyl has also been studied by infrared spectroscopy. Furthermore, the specific number of hydroxyl groups on the surface of the silica samples has been determined by thermogravimetric analysis. Finally an attempt to correlate solid surface characteristics with adsorption isotherms has been developed.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.