Transmission Fiber Chromatic Dispersion Dependence on Temperature: Implications on 40 Gb/s Performance

In this letter, we will evaluate the performance degradation of a 40 km high‐speed (40 Gb/s) optical system, induced by optical fiber variations of the chromatic dispersion induced by temperature changes. The chromatic dispersion temperature sensitivity will be estimated based on the signal quality parameters.     

Affordances in the design of enactive systems

Enactive interfaces must incorporate intuitive activity that characterizes naturalistic perception. However, the manner in which information is presented is not more important than the contents: what information is presented. In this contribution, we address the contents of perception. We argue that people perceive affordances, that is, the possible actions that are available in any given situation. We further argue that enactive interfaces should be designed to optimize presentation of information about the possible actions that are available to a person using the enactive interface. The design of enactive interfaces might be guided by an extension of the theory of ecological interface design (Vicente in Hum Factors 44:62–78, 2002) to include multimodal information that is accessed through fast, intuitive exploratory movement. We review two empirical studies that illustrate our arguments. Careful analysis of affordances, together with our increasing understanding of the enactive perception of affordances, should influence the design of enactive interfaces.     

Convolutional solutions of partial difference equations

A significant part of the theory of one-dimensional linear shift-invariant systems is based on the concept of weighting function (or impulse response): the output is the convolution of the weighting function with the input. This paper introduces the concept of linear translation-invariant systems and uses this notion in studying impulse response, z-transforms, and transfer functions for multidimensional systems.     

Low temperature and strain rate dependence of fracture stress and fracture toughness on thin Fe40Ni40B20 amorphous ribbon

The fracture stress and the critical stress intensity factor of the Fe₄₀Ni₄₀B₂₀ amorphous metallic ribbons 20 μm thick were measured in the temperature range 4.2–300 K and at deformation rates from 3.3×10⁻⁶ to 1.25×10⁻³ m⁻¹ with the aim to obtain more information on the condition for the onset and development of the inhomogeneous plastic deformation and fracture.     

Categorical scaling of time: Implications for clock-counter models.

Pigeons partitioned time into three intervals. Responses to one key could be reinforced after a short time, to a second key after an intermediate time, and to a third key after a long time. The values of the short, intermediate, and long times and the proportion of trials ending with reinforcement were varied. Absolute and relative response rates on each key were an orderly function of time and showed approximately proportional changes with changes in the interval values, consistent with Weber's law, Gibbon's (1977) scalar expectancy theory, and Killeen and Fetterman's (1988) behavioral theory of timing (BeT). Standard deviations of the times at which subjects switched between successive keys increased more slowly within a condition than across conditions, as predicted by BeT. Increases and decreases in reinforcement probability produced both transient and longer lasting changes in timing behavior, once again, in accord with predictions of BeT. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Enhancement mode InP MISFET's with sulfide passivation andphoto-CVD grown P3N5 gate insulators

High performance enhancement mode InP MISFET's have been successfully fabricated by using the sulfide passivation for lower interface states and with photo-CVD grown P₃N₅ film used as gate insulator. The MISFET's thus fabricated exhibited exhibited pinch-off behavior with essentially no hysteresis. Furthermore the device showed a superior stability of drain current. Specifically under the gate bias of 2 V for 10⁴ seconds the room temperature drain current was shown to reduce from the initial value merely by 2.9% at the drain voltage of 4 V. The effective electron mobility and extrinsic transconductance are found to be about 2300 cm ²/V·s and 2.7 mS/mm, respectively. The capacitance-voltage characteristics of the sulfide passivated InP MIS diodes show little hysteresis and the minimum density of interface trap states as low as 2.6×10¹⁴/cm² eV has been attained