6m焦炉移动设备故障分析及处理

对6m焦炉移动设备运行特点及损坏原因进行了分析，并对6m焦炉移动设备PLC系统，液压系统的故障及其处理方法进行了探讨。     

Structured genetic algorithm for robust H∞ controlsystems design

A structured genetic algorithm (SGA) approach is developed for robust controller design based on the concept of an H^∞ loop-shaping technique and the method of inequalities. Such an SGA is capable of simultaneously searching the orders and coefficients of the precompensator and postcompensator for the weighted plant. It is, therefore, not necessary to predefine the order of compensators as in usual practice. A multiple objective ranking approach is also incorporated so that the design criteria of extreme plants can be easily achieved. The effectiveness of such a technique is illustrated by a high-purity distillation column design example     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

Influence of phosphorus element on direct laser sintering of multicomponent Cu-based metal powder

This article presents a detailed investigation on the influence of the phosphorus element upon the laser sintering of a multicomponent Cu-based metal powder system consisting of Cu, Cu-10Sn, and Cu-8.4P. Powder systems containing 0, 10, 15, and 20 wt pct CuP were sintered in atmosphere at room temperature using the following optimal processing parameters: laser power of 350 W, scan speed of 0.04 m/s, scan line spacing of 0.15 mm, and layer thickness of 0.25 mm. It was found that the relative density of the sintered sample with 15 wt pct CuP increased by 24,4 pct as compared with the sample without phosphorus addition. A further increase in the CuP content (≥20 wt pct), however, resulted in a poor densification with a serious delamination. The exact metallurgical roles of the phosphorus element in the laser sintering process were addressed as follows. First, the phosphorus could prevent the sintering system from oxidation by forming CuPO₃, thereby improving the wetting characteristics and the sintering kinetics. Second, the phosphorus could decrease the surface tension of molten materials, leading to a successive transition from highly discontinuous sintered tracks to fairly coherent ones with increasing the phosphorus content. Third, the phosphorus could lower the melt viscosity, thereby improving the microstructural homogeneity of the laser-sintered samples.     

Pattern search algorithms for nonlinear inversion of high-frequency Rayleigh-wave dispersion curves

Inversion of Rayleigh wave dispersion curves is challenging for most local-search methods due to its high nonlinearity and to its multimodality. In this paper, we implemented and tested a Rayleigh wave dispersion curve inversion scheme based on GPS Positive Basis 2N, a commonly used pattern search algorithm. Incorporating complete poll and complete search strategies based on GPS Positive Basis 2N into the inverse procedure greatly enhances the performance of pattern search algorithms because the two steps can effectively locate the promising areas in the solution space containing the global minima and significantly reduce the computation cost, respectively.The proposed inverse procedure was applied to nonlinear inversion of fundamental-mode Rayleigh wave dispersion curves for a near-surface shear (S)-wave velocity profile. The calculation efficiency and stability of the inversion scheme are tested on three synthetic models and a real example from a roadbed survey in Henan, China. Effects of the number of data points, the reduction of the frequency range of the considered dispersion curve, errors in P-wave velocities and density, the initial S-wave velocity profile as well as the number of layers and their thicknesses on inversion results are also investigated in the present study to further evaluate the performance of the proposed approach.Results demonstrate that pattern search algorithms applied to nonlinear inversion of high-frequency surface wave data should be considered good not only in terms of accuracy but also in terms of the computation effort due to their global and deterministic search process.     

Preparation of Compound Ultrafine CeO2 by Wet-Solid-Phase Mechanochemical Modification

To satisfy practical requirements from industrial applications, an alternate route for synthesis compound ultrafine CeO2 powders by wet-solid-phase mechanochemical modification using industrial grade hydrated cerium carbonate as raw material was proposed.The effect of modifier reaction percentage, reaction time, calcining temperature and modifier amount on particle size, density, suspensibility, and hardness of compound CeO2 powder was investigated.The phase evolutions of preparation process were characterized by XRD.SEM micrograph of the final product shows that compound CeO2 powders obtained are well-dispersed, spherically-shaped, uniformly-sized and submicron-sized particles.The method is readily available in raw material, low in cost, simple in process, and has great potential for industrialization.The compound CeO2 powders of different physical properties can be synthesized by controlling the above-mentioned influence factors in preparation process.     

Effect of thermal treatment on ZnO substrate for epitaxial growth

ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. We developed a thermal treatment method to eliminate surface damage on the 0 face of ZnO (0 0 0 1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (0 0 0 1) annealed at 1050 °C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution X-ray diffraction measurements have been employed to investigate the effect of annealing on ZnO substrates.     

Preparation and gas-sensing characteristics of nanocrystalline spinel zinc ferrite thin films

Zinc ferrite is a promising sensor material. In this paper, thin films of nanocrystalline zinc ferrite were deposited on alumina substrates by nebulization of a 0.01-M solution of a mixture of ZnCl/sub 2/ and FeCl/sub 3/ in ethanol (Zn:Fe=1:2) followed by pyrolysis and annealing in flowing air. The resulting films were characterized by X-ray diffraction and scanning electron microscopy, and the gas-sensing properties of as-deposited films were also investigated.     

A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.