退火工艺对Al离子注入的4H-SiC表面形貌的影响

通过应用多次Al离子注入和CVD中的高温退火技术,在SiC片表面形成了p型层。p型层中各深度下Al的浓度均为110¹⁹cm^-3,层厚为550nm。本文应用三种不同的退火工艺对注入后的SiC进行退火。通过测量和比较表面粗糙度,发现通过石墨层覆盖来保护表面的退火工艺可以很好的阻止SiC表面在高温退火下的粗化,粗糙度保持在3.8nm。通过其他两种(在氩气保护下、在SiC保护片的覆盖下)退火工艺退火所得到的表面有明显的台阶,粗糙度分别为12.2nm和6.6nm。     

Using covariance intersection for change detection in remote sensing images

In this paper, an unsupervised change detection technique for remote sensing images ac-quired on the same geographical area but at different time instances is proposed by conducting Co-variance Intersection (CI) to perform unsupervised fusion of the final fuzzy partition matrices from the Fuzzy C-Means (FCM) clustering for the feature space by applying compressed sampling to the given remote sensing images. The proposed approach exploits a CI-based data fusion of the membership function matrices, which are obtained by taking the Fuzzy C-Means (FCM) clustering of the fre-quency-domain feature vectors and spatial-domain feature vectors, aimed at enhancing the unsuper-vised change detection performance. Compressed sampling is performed to realize the image local feature sampling, which is a signal acquisition framework based on the revelation that a small collection of linear projections of a sparse signal contains enough information for stable recovery. The experi-mental results demonstrate that the proposed algorithm has a good change detection results and also performs quite well on denoising purpose.     

Reactive Sintering of Copper Nanoparticles Using Intense Pulsed Light for Printed Electronics

Most commercial copper nanoparticles are covered with an oxide shell and cannot be sintered into conducting lines/films by conventional thermal sintering. To address this issue, past efforts have utilized complex reduction schemes and sophisticated chambers to prevent oxidation, thereby rendering the process cost ineffective. To alleviate these problems, we demonstrate a reactive sintering process using intense pulsed light (IPL) in the present study. The IPL process successfully removed the oxide shells of copper nanoparticles, leaving a conductive, pure copper film in a short period of time (2 ms) under ambient conditions. The in situ copper oxide reduction mechanism was studied using several different experiments and analyses. We observed instant copper oxide reduction and sintering through poly(N-vinylpyrrolidone) functionalization of copper nanoparticles, followed by IPL irradiation. This phenomenon may be explained by oxide reduction either via an intermediate acid created by ultraviolet (UV) light irradiation or by hydroxyl (-OH) end groups, which act like long-chain alcohol reductants.     

Thermoelectric Performance of Poly(3,4-Ethylenedioxy-thiophene)/Poly(Styrenesulfonate) Pellets and Films

The thermoelectric performance of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS) pellets and free-standing PEDOT/PSS films, prepared from PEDOT/PSS solution containing the additives dimethyl sulfoxide or ethylene glycol, have been systematically investigated. It has been found that the electrical conductivity of free-standing PEDOT/PSS films is invariably much higher than that of PEDOT/PSS pellets, while there is no distinct change in the Seebeck coefficient. The highest electrical conductivity of a free-standing PEDOT/PSS film can be up to 300 S cm⁻¹, five to six times higher than that of PEDOT/PSS pellets (55 S cm⁻¹). The thermal conductivity was measured over a wide temperature range, indicating that PEDOT/PSS has extremely low thermal conductivity. The figure of merit (ZT) of free-standing PEDOT/PSS films with good environmental stability can be up to 10⁻², an order of magnitude higher than that of pressed PEDOT/PSS pellets (10⁻³).     

Interpretation of Absolute Laser Reflectance During Optical Monitoring of Polycrystalline GaAs Deposition on Quartz Using Metalorganic Chemical Vapor Deposition

Gallium arsenide (GaAs) was deposited by metalorganic chemical vapor deposition in a horizontal quartz reactor tube using trimethylgallium and arsine at 400°C to 500°C. Nucleation time and deposition rate were monitored using in situ laser reflectometry. This allowed differentiation between film and parasitic growth, which was not possible with other optical techniques. An absolute reflectance model was developed using measurements prior to GaAs deposition, and then employed to calculate values for GaAs on quartz. Detected reflectance intensities during experimental GaAs deposition were low compared with the model due to three-dimensional island growth, causing scattering of the incident laser radiation.     

Thin-Film Thermoelectric Module for Power Generator Applications Using a Screen-Printing Method

A new process for fabricating a low-cost thermoelectric module using a screen-printing method has been developed. Thermoelectric properties of screen-printed ZnSb films were investigated in an effort to develop a thermoelectric module with low cost per watt. The screen-printed Zn _x Sb_1−x films showed a low carrier concentration and high Seebeck coefficient when x was in the range of 0.5 to 0.57 and the annealing temperature was kept below 550°C. When the annealing temperature was higher than 550°C, the carrier concentration of the Zn _x Sb_1−x films reached that of a metal, leading to a decrease of the Seebeck coefficient. In the present experiment, the optimized carrier concentration of screen-printed ZnSb was 7 × 10¹⁸/cm³. The output voltage and power density of the ZnSb film were 10 mV and 0.17 mW/cm², respectively, at ΔT = 50 K. A thermoelectric module was produced using the proposed screen-printing approach with ZnSb and CoSb₃ as p-type and n-type thermoelectric materials, respectively, and copper as the pad metal.     

Effects of Double Substitution with Ge and Te on Thermoelectric Properties of a Skutterudite Compound

Studies have shown that the thermoelectric properties of CoSb₃ could be improved by the substitution of group IVB or VIB elements for Sb. However, the substitution volume is limited. To get a better picture of the substitution volume in view of thermoelectric properties, Ge and Te double-substituted skutterudite materials were prepared with the nominal composition of Co₄Sb _x Ge_5.9−0.5x Te_6.1−0.5x (x = 11, 10, 9, 8) by the traditional solid-state reaction method and spark plasma sintering, and Rietveld analysis was employed to refine the crystal structure. The results showed that the lattice parameter decreased linearly and the solubility limitations of group IVB and VIB elements were greatly alleviated by the Ge and Te codoping. Besides, the thermoelectric properties were analyzed through measurements of electrical and thermal conductivities as well as room-temperature electrical transport properties. The results showed that the substitution volume of Ge and Te could play an important role in the thermoelectric properties, and a minimum lattice thermal conductivity value of 1.56 W m⁻¹ K⁻¹ was obtained at around 673 K for Co₄Sb₈Ge_1.9Te_2.1. Co₄Sb₁₁Ge_0.4Te_0.6 achieved the best figure of merit of 0.89 at around 773 K, which was remarkably improved over that of untreated CoSb₃.     

Effects of Ce Addition on the Microstructure and Mechanical Properties of Sn-58Bi Solder Joints

The effects of a rare-earth element on the microstructure, mechanical properties, and whisker growth of Sn-58Bi alloys and solder joints in ball grid array (BGA) packages with Ag/Cu pads have been investigated. Mechanical testing indicated that the elongation of Sn-58Bi alloys doped with Ce increased significantly, and the tensile strength decreased slightly, in compar- ison with undoped Sn-58Bi. In addition, the growth of both fiber- and hillock-shaped tin whiskers on the surface of Sn-58Bi-0.5Ce was retarded in the case of Sn-3Ag-0.5Cu-0.5Ce alloys. The growth of interfacial intermetallic compounds (IMC) in Sn-58Bi-0.5Ce solder joints was slower than that in Sn-58Bi because the activity of Ce atoms at the interface of the Cu₆Sn₅ IMC/solder was reduced. The reflowed Sn-58Bi and Sn-58Bi-0.5Ce BGA packages with Ag/Cu pads had a ball shear strength of 7.91 N and 7.64 N, which decreased to about 7.13 N and 6.87 N after aging at 100°C for 1000 h, respectively. The reflowed and aged solder joints fractured across the solder balls with ductile characteristics after ball shear tests.     

Multi-resolution dyadic wavelet denoising approach for extraction of visual evoked potentials in the brain

More powerful techniques need to be developed to extract small and weak visual evoked potentials (VEPs) from the spontaneous cerebral electric activity EEG. The authors present a wavelet decomposition algorithm suitable for identification and detection of very weak VEPs. The cross-correlation analysis between Daubechies wavelet (i.e. dbN) functions /spl psi//sub N/(t), for N=4, 5 ,...,10 and a representative noiseless VEP signal is performed to choose the proper wavelet function, say that with maximum correlation coefficient (highest resemblance) with respect to the representative VEP signal sequence. In this way, the specific choice of the best wavelet prototype function is no longer arbitrary for the application of obtaining pattern reversal VEPs. Extensive clinical experiments have demonstrated that the multiresolution wavelet analysis method can identify and estimate the peak latency of VEP signal well, with only a much reduced trial of ensemble averaging (EA) required. The major advantages of the wavelet transform are that it can 'zoom-in' to time discontinuities, and that orthonormal bases, localised in time and frequency, can be constructed. With this zoom-in property of the wavelet analysis, the irregularities or abnormalities of signals can easily be detected. Also the characteristics of EP signals can be captured by means of wavelet analysis, which can be further used for the detection and recognition of the abnormalities in the brain.     

ZL108镍基粉末激光表面合金化气孔与裂纹的研究

ZL10 8表面镍基粉末激光合金化的实验研究表明 :激光合金化层的显微组织由两部分组成 ,与基体金属交界处是垂直于熔合线生长的具有定向凝固特征的树枝状晶 ,合金化区是细小的等轴状晶。在树枝状晶相邻间的凹陷处和基体金属未熔化晶粒的界面上最有可能产生气泡核 ,熔池保护不良 ,合金粉末或粘接剂中残存水分 ,均是影响气泡生成的主要因素。对于合金层中的裂纹 ,主要是在熔池凝固末期 ,已凝固合金化层金属塑性不足并在残余拉应力作用下造成的低塑性脆化裂纹。