A Novel Graphene Conductive Ink Based Circular Patch Antenna for 2.4 GHz Application

Graphene conductive ink based microstrip line fed circular patch is presented in this paper. The main objective of this work is to replace copper with graphene which is an emerging promising material, in the field of patch antennas with conventional rigid substrates using a simple printing technique and to measure its performance. The prototyped screen printed graphene antenna is perfectly radiating and the return loss, VSWR and gain of the graphene antenna is found to be better than conventional copper antenna. Also, the bandwidth of the graphene antenna is 1.6 times greater than that of the conventional copper antenna on rigid substrate.

     

In-line fiber etalon (ILFE) fiber-optic strain sensors

This paper describes an optical fiber interferometer that uses a short segment of silica hollow-core fiber spliced between two sections of single-mode fiber to form a mechanically robust in-line optical cavity. The hollow-core fiber is specifically manufactured to have an outer diameter that is equal to the outer diameter of the single mode lead fibers, thereby combining the best qualities of existing intrinsic and extrinsic Fabry-Perot sensors. Uniaxial tension and pure bending strength tests are used to show that the new configuration does not diminish the axial strength of bare fiber and reduces the bending strength by 17% at most. Similar tests confirm that the fiber sensor has 1.96% strain to failure. Axisymmetric finite element analysis is used to investigate the reliability of the in-line etalon when it is embedded in a typical thermoset composite, and parametric studies are performed to determine the mechanically optimal cavity length. The fiber optic sensor is tested using low coherence interferometry with pseudo-heterodyne demodulation under strain and temperature fields. The strain response compares well with resistance strain gages, and the temperature tests confirm the low thermal apparent strain of this sensor     

A New Construction of Signature Waveforms for Multi-rate Multi-cell QS-CDMA Systems

In this paper, we propose a new construction of signature waveform sets based on Generalized Loosely Synchronization (GLS) sets and different chip waveforms. The new signature sets are applied into the multi-rate multi-cell quasi-synchronous CDMA (QS-CDMA) system where each cell is assigned with a GLS set; different users in the same cell are assigned with different GLS sequences in the same GLS set; user’s different streams are assigned with the same GLS sequence but different chip waveforms. According to the properties of GLS sets, the inter-cell interference (ICI) and the multi-user interference (MUI) in the same cell can be reduced significantly. The interferences among different streams of the same user are handled by an optimal (or suboptimal) multi-stream detector(s), notice that the multi-stream detector mentioned here is also named as multi-user detector in other references. We compare the performance of the multi-rate multi-cell QS-CDMA system employing the proposed sets with that of multi-rate system employing well-known concatenated orthogonal/PN sets and that of single-rate system employing GLS sets. The results show that the multi-rate system employing the proposed sets can achieve significant interference reduction. Meanwhile the performance of multi-rate system is similar to that of single-rate system due to the inclusion of multi-user detection.

Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes

The impulse response in frontside-illuminated mid-wave infrared HgCdTe electron avalanche photodiodes (APDs) has been measured with localized photoexcitation at varying positions in the depletion layer. Gain measurements have shown an exponential gain, with a maximum value of M = 5000 for the diffusion current at a reverse bias of V _b = 12 V. When the light was injected in the depletion layer, the gain was reduced as the injection approached the N+ edge of the junction. The impulse response was limited by the diode series resistance–capacitance product, RC, due to the large capacitance of the diode metallization. Hence, the fall time is given by the RC constant, estimated as RC = 270 ps, and the rise time is due to the charging of the diode capacitance via the transit and multiplication of carriers in the depletion layer. The latter varies between t _10–90 = 20 ps (at intermediate gains M < 500) and t _10–90 = 70 ps (at M = 3500). The corresponding RC-limited bandwidth is BW = 600 MHz, which yields a new absolute record in gain–bandwidth product of GBW = 2.1 THz. The increase in rise time at high gains indicates the existence of a limit in the transit-time-limited gain–bandwidth product, GBW = 19 THz. The impulse response was modeled using a one-dimensional deterministic model, which allowed a quantitative analysis of the data in terms of the average velocity of electrons and holes. The fitting of the data yielded a saturation of the electron and hole velocity of v _e = 2.3 × 10⁷ cm/s and v _h = 1.0 × 10⁷ cm/s at electric fields E > 1.5 kV/cm. The increase in rise time at high bias is consistent with the results of Monte Carlo simulations and can be partly explained by a reduction of the electron saturation velocity due to frequent impact ionization. Finally, the model was used to predict the bandwidth in diodes with shorter RC = 5 ps, giving BW = 16 GHz and BW = 21 GHz for x _j = 4 μm and x _j = 2 μm, respectively, for a gain of M = 100.     

Thermal Conductivity of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript> Affected by Grain Size and Pores

A fine measurement system for measuring thermal conductivity was constructed. An accuracy of 1% was determined for the reference quartz with a value of 1.411 W/m K. Bi_0.5Sb_1.5Te₃ samples were prepared by mechanical alloying followed by hot-pressing. Grain sizes were varied in the range from 1 μm to 10 μm by controlling the sintering temperature in the temperature range from 623 K to 773 K. The thermal conductivity was 0.89 W/m K for the sample sintered at 623 K, while a grain size of 1.75 μm was measured by optical microscopy and scanning electron microscopy. The thermal conductivity increased on the sample sintered at 673 K because of grain growth and decreased on those sintered at the temperatures from 673 K to 773 K because the increase of pore size caused to decrease thermal conductivity. The increase of thermal conductivity for the samples sintered at temperatures above 773 K was affected by the increase of carrier concentration.     

The theory of multiple peeling

In this paper we derive the theory of multiple peeling, extending the pioneering energy-based single peeling theory of Kendall, including large deformations and pre-stretching. We can thus treat a complex system of films, adhering over a substrate and having a common hinge where the pulling force is applied. Two case studies are investigated: the asymmetric V-shape double peeling and the symmetric cone-shape configuration with N peeling tapes, both requiring the solution of six nonlinear coupled equations (instead of the one needed in the simpler single peeling problem). Remarkable implications emerge: (1) for moderate deformations, the critical strain of a tape is identical to that of the single peeling; (2) an optimal peeling angle, at which adhesion is maximal, is discovered; (3) an additional optimization, even for hierarchical structures, is introduced by imposing the delamination force equal to the intrinsic fracture of the tape. Also, the length of the peeling process zone is calculated, suggesting different optimal values for flaw-tolerant peeling at different angles. Applications to gecko adhesion, for which the flaw-tolerant peeling is demonstrated, and spider silk anchors, that we are going to discuss in details in subsequent papers, are envisioned (including a new pre-stretching mechanism for adhesion control) and suggested by the evidence of a smart mechanism capable of maximizing adhesion simply by increasing the applied tension.     

Fabrication of transparent polymer-matrix nanocomposites with enhanced mechanical properties from chemically modified ZrO<Subscript>2</Subscript> nanoparticles

Optically transparent nanocomposites with enhanced mechanical properties were fabricated using stable dispersions of sub 10 nm ZrO₂ nanoparticles. The ZrO₂ dispersions were mixed with a commercially available bisphenol-A-based epoxy resin (RIMR 135i) and cured with a mixture of two amine-based curing agents (RIMH 134 and RIMH 137) after complete solvent removal. The colloidal dispersions of ZrO₂ nanoparticles, synthesized through a non-aqueous approach, were obtained through a chemical modification of the ZrO₂ nanoparticle surface, employing different organic ligands through simple mixing at room temperature. Successful binding of the ligands to the surface was studied utilizing ATR–FT-IR and thermogravimetric analysis. The homogeneous distribution of the nanoparticles within the matrix was proven by SAXS and the observed high optical transmittance for ZrO₂ contents of up to 8 wt%. Nanocomposites with a ZrO₂ content of only 2 wt% showed a significant enhancement of the mechanical properties, e.g., an increase of the tensile strength and Young’s modulus by up to 11.9 and 12.5%, respectively. Also the effect of different surface bound ligands on the mechanical properties is discussed.     

Room temperature ferromagnetism in Tb-doped ZnO dilute magnetic semiconducting nanoparticles

Pure and Tb-doped ZnO nanoparticles have been synthesized by chemical co-precipitation method. The transmission electron microscopy study reveals the spherical morphology of synthesized nanoparticles with average particle size 14–18 nm. The effect of Tb-doping on structural, optical and magnetic properties has been studied. X-ray diffraction shows that pure and Tb-ZnO nanoparticles exhibit wurtzite structure having hexagonal phase with primitive unit cell. It further reveals that there is no effect of Tb-doping on the X-ray diffraction pattern up to 2 % doping, however, higher doping concentration result in accumulation of Tb on ZnO surface. Photoluminescence spectra reveal that the doping Tb in ZnO changes crystallographic structure generating non-radiative oxygen vacancies. Three emission peaks located around 423, 485 and 515 nm has been observed. Pure ZnO nanoparticles show diamagnetic character, however, Tb-doped ZnO nanoparticles exhibit room temperature ferromagnetism. The correlation between defects generated upon Tb-doping to the observed ferromagnetism, in the synthesized nanoparticles, has been reported.     

Supply chain risk assessment during new product development: a group decision making approach using numeric and linguistic data

Companies strive to minimise supply chain related risks during new product development as any glitch while developing new products can lead to considerable delay in product launch with severe financial implications. However, many organisations face difficulty in properly assessing the vulnerabilities of their globally dispersed supply chains during the product development stage as no suitable procedure for that purpose seems to be readily available in the literature. The present research is an attempt to fulfil this requirement. A step-by-step approach for supply chain risk assessment during new product development, involving group decision making, is suggested. This approach can use both numeric and linguistic data and helps in determining vulnerability scores for various sub-systems and for each supplier of the most vulnerable sub-system. This is followed by failure mode effect analysis (FMEA) which helps prioritise failure modes of vulnerable suppliers and thus create specific control plans to mitigate supply related failures. Using this approach, organisations can devise control plans to alleviate the supplier related risks during new product development. Although, the methodology is illustrated through an application in aircraft manufacturing, it can also be used in other discrete and process manufacturing industries.