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931.
Bone marrow examination revealed a lipid-laden histiocytosis in seven patients undergoing long-term total parenteral nutrition necessitated by extensive short-bowel surgical resection. Clinical abnormalities occurred during this treatment which required bone marrow examination. These included hepatosplenomegaly and peripheral blood cytopenia; the median time to the detection of these abnormalities was 64 months. The most striking change within the bone marrow was the presence of many pigment-laden histiocytes which had the typical morphology of sea-blue histiocytes seen in the so-called idiopathic sea-blue histiocyte syndrome. The occurrence of sea-blue histiocytosis in the bone marrow in association with long-term parenteral nutrition for short-bowel syndrome has not, to our knowledge, been reported previously and should now be considered in the differential diagnosis of bone marrow sea-blue histiocytosis.  相似文献   
932.
本文概述了离子注入过程中污染产生的原因和防止污染的措施,特别强调了对微粒污染和金属污染的防护以满足ULSI加工对离子注入的要求。  相似文献   
933.
934.
The paper covers a simple idea. If we sample an aperture, we can obtain valid patterns over a limited angular region about the normal to the aperture. The same expression can be used with near-field measurements. I reduced the expression to a nomograph. A nomograph allows one to rapidly test various choices. In the second half of the paper, I answer questions caused by the February column which discussed polarization (Milligan, IEEE Antennas. Propag. Mag., vol.38, no.1, p.56-8, 1996)  相似文献   
935.
The formation of mullite was investigated using microcomposite powders which consist of α-alumina cores and amorphous silica coatings. Differential thermal analysis and X-ray diffraction showed that the mullitization reaction was endothermic. In contrast, mullite forms exothermically in samples prepared by sol-gel processing. The results are shown to be consistent with available thermodynamic data for mullite formation from different alumina and silica phases.  相似文献   
936.
937.
938.
The objective of this study is to determine the economic and operational impact on energy cost of incorporating large photovoltaic (PV) and wind energy conversion systems (WECS) into the electric utility generation mix. In most cases, PV and WECS power outputs are subtracted from the utility load with the expectation that conventional generation would meet the residual load. This approach is valid for small penetration levels and/or for PV and WECS facilities connected near load centers, However, several constraints such as thermal generation characteristics, fuel supply and delivery, spinning reserve requirements, and hydro availability are not adequately represented in this process. To determine the optimal value of large-scale PV and WECS applications, a new methodology that would take into account the aforementioned constraints as well as a more global penetration is developed. Results indicate that while high hydro availability increases PV penetration levels, high ramping rates can also significantly increase penetration levels  相似文献   
939.
Roos  G. Hoefflinger  B. 《Electronics letters》1993,29(24):2103-2104
A process-inherent NAND2 device is presented for a three-dimensional CMOS integration with epitaxial lateral overgrowth and chemo-mechanical polishing. The required 'OR' function of the two PMOS transistors is achieved by one silicon volume, which is controlled by a back gate and a conventional front gate. Almost symmetrical characteristics are measured for the front and the back gates.<>  相似文献   
940.
The authors have fabricated 1.3-μm InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm 2 was obtained. The CW threshold current was as low as 1.8 mA at 20°C, and maximum CW operating temperature of 120°C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure  相似文献   
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