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201.
Xiaojun Xie Yonghong Cheng Hong Wang Qian Wang Xiaolin Chen Caixin Sun 《Ceramics International》2008,34(4):689-693
In the ideal A2B2O6O′ pyrochlore structure, the x-value of O atom position is a variable parameter. In Bi1.5ZnNb1.5−xTaxO7 (BZNT) cubic pyrochlores, the x-values alter with the different compositions of Nb/Ta. In this work, a series of initial models for BZNT were established by analyzing X-ray diffraction data. Then three structure modifying methods, including Rietveld refinement, Rietveld refinement with energy and geometry optimization based on quantum mechanics, were employed to obtain the precise models using Materials Studio. Moreover, the reflectivities of BZNT were computed by quantum mechanical simulation based on the refined models. Comparing the simulation results from different modifying models with the experimental results, it is found that Rietveld refinement with energy optimization is the most accurate method for BZNT pyrochlores. According to the simulation results, the different reflectivities correspond well with various x-values of O atom positions in BZNT pyrochlores. 相似文献
202.
203.
结合兰州市的水泥标准稠度用水量方法测定 (代用法 )的实例 ,分析代用法测定标准稠度用水量的缺点 ,并对此方法提出了一些改进措施 相似文献
204.
Data clustering consists of a group of procedures used to collect similar entries or data points within a set into clusters. No existing clustering technique considers entries sequentially in time. In some cases, it is desirable to generate clusters that represent a segment of a time-ordered data set. For these purposes, an order-specific clustering algorithm is proposed. The proposed algorithm employs representative load curves to describe the clusters it generates. The capabilities of the order-specific clustering algorithm are demonstrated on a case study using electricity demand data for the province of Ontario, Canada. Two different applications of the clustering algorithm on this data set are given to demonstrate the effect of error threshold values on the formation of clusters. An analysis of the error for each of these clustering applications is presented. 相似文献
205.
D. Ballutaud F. Jomard T. Kociniewski E. Rzepka H. Girard S. Saada 《Diamond and Related Materials》2008,17(4-5):451-456
Hot filament and microwave plasma CVD micro- nanocrystalline diamond films are analysed by visible and ultra-violet excitation source Raman spectroscopy. The sample grain size varies from 20 nm to 2 μm. The hydrogen concentration in samples is measured by SIMS and compared to the grain size, and to the ratio of sp2 carbon bonds determined by Raman spectroscopy from the 1332 cm− 1 diamond peak and the sp2 1550 cm− 1 G band. Hydrogen concentration appears to be proportional to the sp2 bonds ratio. The 3000 cm− 1 CHx stretching mode band intensity observed on the Raman spectra is decreasing with the G band intensity. Thermal annealing modifies the sp2 phase structure and concentration, as hydrogen outdiffuses. 相似文献
206.
Y.M. Wong W.P. Kang J.L. Davidson J.H. Huang D.V. Kerns 《Diamond and Related Materials》2008,17(4-5):552-555
A novel integrated vacuum field emission (VFE) differential amplifier (diff-amp) utilizing carbon nanotube (CNT) emitters has been developed. A dual-mask microfabrication process was employed to achieve a VFE diff-amp by integrating identical CNT VFE transistors with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well-matched in their device characteristics. The measured ac small-signal characteristics of the diff-amp showed a common-mode-rejection ratio (CMRR) of ~ 320 (~ 50 dB). The proposed analytical model of the CMRR was verified to be in good agreement with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve temperature and radiation tolerant VFE integrated microelectronics. 相似文献
207.
208.
209.
Muhammad Maqbool Hugh H. Richardson Martin E. Kordesch 《Journal of Materials Science》2007,42(14):5657-5660
Thin films of Praseodymium doped AlN are deposited on silicon (111) substrates at 77 K and 950 K by rf magnetron sputtering
method. About 500–1000 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target of
Al with Pr. X-rays diffraction results show that films deposited at 77 K are amorphous and those deposited at 950 K are crystalline.
Cathodoluminescence studies are performed at room temperature and luminescence peaks are observed in a wide range from ultraviolet
to infrared region. The most intense peak is obtained in green at 526 nm from amorphous films as a result from 3P1→3H5 transition. In crystalline films the intense peak was obtain in red at 648 nm as a result from 3P0→3F2 transition. Films are thermally activated at 1300 K for half an hour in a nitrogen atmosphere. Thermal activation enhances
the intensity of luminescence. Two peaks at 488 nm and 505 nm merged after thermal activation, giving rise to a single peak
at 495 nm. 相似文献
210.
We report the growth of highly C-axis orientation of Sr
x
Ba1−x
Nb2O6 (SBN) thin films on p-type (100) Si substrates by using a potassium-substituted SBN template layer with the sol–gel method. The crystallization of SBN thin films was found closely related to the potassium ion doping concentration and the postannealing temperature of the K-SBN template layer. Secondary ion mass spectrometry analysis showed that potassium elements were accumulated at the interface of the template layer and silicon substrate. SBN films postannealed at 750 °C with K-SBN template layer has a smaller full width at half maximum of X-ray rocking curve of 2.45° than that of 5.40° for the pure SBN films. By introducing a template layer, the surface morphologies of SBN films fabricated on silicon substrate were greatly improved. 相似文献