高温氨化合成GaN微晶

分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。     

用于有源电力滤波器的IGBT驱动及保护研究

介绍有源电力滤波器设计中EXB841型绝缘栅场效应晶体管(IGBT)驱动器的驱动原理和电路特点,对IGBT的栅极驱动特性、栅极串联电阻进行了探讨,给出过流保护和过压吸收的有效办法。样机试运行证明此种设计方案可靠、有效。     

主动雷达终端实时仿真软件的设计与实现

在主动雷达数据回放显示的基础上,通过使用D irectDraw和Intel IPP技术,设计了主动雷达终端实时仿真软件,包括信号处理、数据处理及终端显示等模块,极大地提高了软件的执行效率,使得整个仿真过程具有良好的实时性。本文介绍了该软件的设计及实现。     

不同表面预处理对有机电致发光显示器性能的影响

从生产角度研究了基板表面的预处理工艺对OLED性能的影响,分别用UVOzone、氧Plasma以及两者相结合的方式对基板进行表面处理,并按照生产工艺制作器件,从接触角、方阻以及光电特性等测试结果对各种表面处理的样品进行比较。结果表明以上处理都改善了器件性能,不同程度提高了器件的清洁度、亮度和发光效率,其中UVOzone和氧Plasma结合的方式处理效果最为显著,器件在10V时亮度达到79920cd/m2,比其他两种处理方式亮度提高约25%。     

分布式光纤拉曼放大器的增益平坦设计

介绍了在波分复用（WDM）系统中分布式光纤拉曼放大器（FRA）的理论分析模型。在此基础上，对增益平坦设计所需考虑的因素进行了分析；最后通过试验证明了它的有效性。     

基于开关电流技术的连续小波变换的实现方法

开关电流技术是一种新的模拟抽样数据处理技术。开关电流电路具有一般电路不具有的优点，与标准数字CMOS工艺兼容。连续小波变换是分析非平稳信号的有力工具，在信号处理上有广泛的应用。本文提出用开关电流技术实现连续小波变换的方法，并用Matlab仿真证明了其理论可行性。     

DMT系统中一种易于实现的时域均衡器

总结了DMT系统中时域均衡器(TEQ)的主要设计方法，指出最大缩短信噪比(MSSNR)TEQ的最优设计方法很难实时实现。提出了一种MSSNR TEQ的次优设计方法，它首先估计出目标抽样窗的最优延迟，然后用分步求解法求出TEQ的抽头系数。和最优方法相比，次优方法的计算量大幅度减少，可实时实现，而其缩短信噪比的损失很小。仿真实验验证了次优方法的有效性。     

纺织工业厂房设计类型浅探

总结了目前几种常见类型纺织厂房的特点，进行了技术经济指标对比，建议性地指出目前纺织工业厂房设计的方向。     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

Correlation of fecundability and serum estradiol after danazol treatment in patients with advanced endometriosis

OBJECTIVE: To examine the relationship between pregnancy incidence and the level of serum E2 during danazol therapy. DESIGN: Danazol was given by 200 mg four times daily for 3 months. Serum E2 level was checked after completing the therapy, but before stopping medication. Patients then were advised to conceive at the appropriate time over a 6-month period. SETTING: Reproductive and Endocrine Laboratory of the Department of Obstetrics and Gynecology, Keelung Chang Gung Memorial Hospital, Keelung, Taiwan. PATIENTS: Infertile women with invasive endometriosis receiving conservative surgery and danazol treatment. INTERVENTIONS: Serum E2 is checked before medication and at the end of danazol therapy, but before stopping medication. MAIN OUTCOME MEASURES: Whether pregnancy is related to the change of serum E2 caused by danazol therapy. RESULTS: There were 24 pregnancies in 38 patients with invasive endometriosis after treatment. Pregnant patients had significantly lower serum E2 levels as compared with the nonpregnant patients. CONCLUSIONS: After conservative surgery for invasive endometriosis associated with infertility, the therapeutic period of danazol treatment could be shortened to 3 months. Because there is significant correlation of fecundability and serum E2 after danazol medication, serum E2 could be a guideline for predicting pregnancy or for prolonging or changing of treatment after danazol therapy.