雷达仿真系统中电磁干扰环境的仿真设计和实施

雷达仿真系统是为检测雷达设备的抗干扰能力以及在各种电磁环境下的工作性能而设计的，包括有源干扰和无源干扰的模拟仿真。本文阐述了无源干扰即杂波的散射模型和仿真过程；从同步脉冲干扰的基本原理出发，阐明在雷达工作环境仿真系统中距离拖引、速度拖引、虚假目标等同步脉冲有源干扰的设计和实施过程；并针对工作在搜索和跟踪交替模式下的相控阵雷达提出自适应综合干扰方式；最后分析并总结了系统仿真时为真实、有效地模拟电磁干扰环境应注意的关键问题。     

LaNiO3薄膜热稳定性的研究

LaNiO3导电金属氧化物薄膜在现代应用科学研究中作为电极和过渡阻挡层倍受青睐，它具有很好的导电特性和稳定性。该文采用射频溅射法制备了具有(100)择优取向的赝立方结构LaNiO3-x薄膜，并进行了原位热处理。实验结果表明，在265℃的处理条件下，LaNiO3薄膜表现出不稳定性，晶格中的氧在2h内失去了2.7％。氧的损失对品格结构没有明显影响，但薄膜的导电性能明显下降，折射率和消光系数也具有相同幅度的下降。对薄膜的应用具有一定的影响。该文从LaNiO3薄膜的导电机理方面对实验现象给出了分析和解释。     

用边界元法提取VLSI版图电阻

介绍了ＶＬＳＩ版图验证中电阻提取的基本原理和主要方法，给出了一种新颖的基于边界元法的电阻提取算法。该算法采用变节点单元，较好地解决了实际问题中经常出现的角点问题。通过应用该算法对几个实例进行提取，证明使用本文的算法不仅在精度上而且在占用ＣＰＵ时间上都取得了令人满意的效果     

纤维共晶生长界面前沿三维扩散场解析

修正Ｊａｃｋｓｏｎ和Ｈｕｎｔ关于在垂直生长方向截面上溶质扩散各向同性假设，求解三维Ｌａｐｏｌａｃｅ方程，获得纤维共晶生长界面前沿三维稳态扩散场，并证明Ｊａｃｋｓｏｎ和Ｈｕｎｔ的二维模型是实际生长的二维简化和一阶近似，并用丁二腈（ＳＣＮ）一梓脑（ＣＡＭ）纤维共晶系统计算生长界面前沿溶质分布。     

Influence of gas composition on recurrence of atelectasis after a reexpansion maneuver during general anesthesia

BACKGROUND: Atelectasis, an important cause of impaired gas exchange during general anesthesia, may be eliminated by a vital capacity maneuver. However, it is not clear whether such a maneuver will have a sustained effect. The aim of this study was to determine the impact of gas composition on reappearance of atelectasis and impairment of gas exchange after a vital capacity maneuver. METHODS: A consecutive sample of 12 adults with healthy lungs who were scheduled for elective surgery were studied. Thirty minutes after induction of anesthesia with fentanyl and propofol, the lungs were hyperinflated manually up to an airway pressure of 40 cmH2O. FIO2 was either kept at 0.4 (group 1, n = 6) or changed to 1.0 (group 2, n = 6) during the recruitment maneuver. Atelectasis was assessed by computed tomography. The amount of dense areas was measured at end-expiration in a transverse plane at the base of the lungs. The ventilation-perfusion distributions (VA/Q) were estimated with the multiple inert gas elimination technique. The static compliance of the total respiratory system (Crs) was measured with the flow interruption technique. RESULTS: In group 1 (FIO2 = 0.4), the recruitment maneuver virtually eliminated atelectasis for at least 40 min, reduced shunt (VA/Q < 0.005), and increased at the same time the relative perfusion to poorly ventilated lung units (0.005 < VA/Q < 0.1; mean values are given). The arterial oxygen tension (PaO2) increased from 137 mmHg (18.3 kPa) to 163 mmHg (21.7 kPa; before and 40 min after recruitment, respectively; P = 0.028). In contrast to these findings, atelectasis recurred within 5 min after recruitment in group 2 (FIO2 = 1.0). Comparing the values before and 40 min after recruitment, all parameters of VA/Q were unchanged. In both groups, Crs increased from 57.1/55.0 ml.cmH2O-1 (group 1/group 2) before to 70.1/67.4 ml.cmH2O-1 after the recruitment maneuver. Crs showed a slow decrease thereafter (40 min after recruitment: 61.4/60.0 ml.cmH2O-1), with no difference between the two groups. CONCLUSIONS: The composition of inspiratory gas plays an important role in the recurrence of collapse of previously reexpanded atelectatic lung tissue during general anesthesia in patients with healthy lungs. The reason for the instability of these lung units remains to be established. The change in the amount of atelectasis and shunt appears to be independent of the change in the compliance of the respiratory system.     

双迭片弯曲压电陶瓷换能器及振动模态分析测量

介绍了双迭片弯曲压电陶瓷换能器的制作及边缘固定金属压电陶瓷双迭片弯曲振动，并利用有限元分析了换能器的谐振模式，采用激光多普勒干涉仪对换能器的谐振特性以及振动速度和位移分布进行了测量和分析，结果表明：换能器空载性能良好，通过有限元分析与先进测量手段的结合，能够对换能器器件的制作与分析进行指导。     

松香及其衍生物在浮选分离中的应用

介绍了松香的来源、化学组成及理化性质；讨论了松香及其衍生物在非硫化物矿浮选分离、有色金属离子的浮选分离以及从水溶液中浮选分离有机物等方面的应用情况。     

Gate and drain currents in off-state buried-type p-channel LDDMOSFETs

The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10^-3 to 5×10^-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n ⁺ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n⁺ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage