非接触式半导体少子寿命测试方法——微波反射法

介绍了一种非接触式用于测量少子寿命的微波反射法，并与通常的光电导衰退法进行了比较。     

波束扫描合成孔径雷达成像处理

本文主要研究了滤束扫描合成孔径雷达的杨像处理方法，分析了ＳＣＡＮＳＡＲ的工作原理、信号格式、信号结构和信号参数限制，成像处理算法包括块数据成像算法和块图像拼接算法两部分，频谱分析法和时域频域混合相关法被用于数据成像，块图像的拼接是利用时间有系剪裁块图像再顺次拼接，计算机仿真验证了本文提出的ＳＣＡＮＳＡＲ信号格式和成像算法的可行性。     

Synthesis, characteristics and oxygen-sensitive properties of SrMgxTi 1 − xO3 nanocrystals

SrMg_xTi_{1 - x}O₃ nanocrystals (x = 0.1–0.6) were synthesized by the stearic acid gel method. Powder samples were characterized by X-ray diffraction and X-ray photoelectron (XP) spectroscopy. The results showed that the lattice parameter a and the O 1s XP spectrum changed not only with the Mg content x but also with the grain size d of the samples. The conductivity of a thick film specimen fabricated on an aluminium oxide wafer was investigated in a nitrogen—oxygen atmosphere.     

Improved method for HgI2 crystal growth and detector fabrication

Instead of the temperature oscillation method (TOM), a modified vapor growth method was applied in this paper to grow large HgI₂ crystals with fewer lattice defects by providing a relatively stable temperature field during growth. And a new processing technique of HgI₂ crystals was developed for detector fabrication by merging solution string-sawing and hand-cleaving. The lattice deformations caused during cleaving were reduced greatly by eliminating passivated layers on the sawed crystal platelets before cleaving.     

连续输出20WAlGaAs／GaAs量子阱激光二极管线列阵

采用ＭＯＣＶＤ实现了ＡｌＧａＡｓ／ＧａＡｓ量子阱结构，获得了连续输出２０Ｗ激光二极管线列阵，线列阵长度１．０ｃｍ，激射波长８０８±４ｎｍ。     

On the Realization of Current－Mode Continuous－Time Operational Transconductance Capacitance Filter

ＯｎｔｈｅＲｅａｌｉｚａｔｉｏｎｏｆＣｕｒｒｅｎｔ－ＭｏｄｅＣｏｎｔｉｎｕｏｕｓＴｉｍｅＯｐｅｒａｔｉｏｎａｌＴｒａｎｓｃｏｎｄｕｃｔａｎｃｅＣａｐａｃｉｔａｎｃｅＦｉｌｔｅｒ￥ＧｕｏＪｉｎｇｂｏａｎｄＨａｎＱｉｎｇｑｕａｎ（ＣｈａｎｇｃｈｕｎＰｏｓ...     

适合航天电子系统应用的DC－DC变换器

讨论了航天ＤＣ－ＤＣ混合集成电路的拓朴结构。通过对几种电路的性能比较，提出了适合航天应用的ＤＣ－ＤＣ变换器的最佳拓朴结构。论述了ＰＷＭ－ＬＩＮ变换器的控制方法，该方法对于确保二次稳压ＤＣ－ＤＣ变换器较高的效率具有重要意义，亦可大大提高混合集成电路的成品率。     

1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。     

一种提高微电路外壳使用可靠性的方法

简要分析了白瓷双列直插外壳的失效模式和失效机理，并进行了模拟实验，通过对实验结果的分析，提出对成品微电路进行二次电镀能够提高其外壳的使用可靠性。     

全耗尽CMOS／SOI技术的研究进展

ＳＯＩ材料技术的成熟，为功耗低，抗干扰能力强，集成度高，速度快的ＣＭＯＳ／ＳＯＩ器件的研制提供了条件，分析比较了ＣＭＯＳ／ＳＯＩ器件与体硅器件的差异，介绍了国外薄膜全耗尽ＳＯＩ技术的发展和北京大学微电子所的研究成果。