基于分数阶模糊函数线调频率延时对消的运动弱目标检测

针对回波信号相位中存在的三次项问题,文中介绍了分数阶模糊函数的定义及部分性质,在此基础上研究了含有三次项的运动目标回波信号的分数阶模糊函数的线性调频延时特性,根据此特性文中提出了一种海杂波背景下的基于分数阶模糊函数线调频延时对消的运动弱目标检测方法。该方法通过将原信号的分数阶模糊函数模函数与线性调频延时后信号的分数阶模糊函数模函数对消,能在基本不减弱信号分数阶模糊函数模值的情况下有效地对消部分杂波,达到提高信杂比,提高检测性能的目的。最后,通过对IPIX实测数据验证表明,所提方法在增加目标与杂波分数阶模糊函数域峰值差以及提高信杂比等方面都明显优于仅对回波作分数阶模糊函数。文中采用双参数恒虚警检测方法设置适当的门限,该检测方法能够达到更好的检测效果。      

双机拖动系统的鲁棒调节器的设计

在线性系统设计中,需要设计一种调节器使系统具有闭环系统稳定且达到无差调节的性质,在系统参数发生微小扰动时,仍然要求保持这两种性质。设计具有这种性质的调节器的问题,称为鲁棒调节器问题。本文以双机拖动调速系统为例,说明鲁棒调节器的结构及设计方法,这种方法在鲁棒调节器设计中起着重要作用。     

用阳极溶出伏安法测定啤酒中铜与铅的含量

本文主要介绍了阳极溶出伏安法在啤酒成分中痕量铜铅离子的分析方法,用玻碳电极为工作电极,以醋酸—醋酸钠缓冲液为底液,对铜铅离子进行了本方法的条件试验,选择了理想的电解电位、电积时间、扫描速率等条件。酒样用标准加入法,所测铜铅的实验数据有较好的重现性,铜铅测定范围可达10—360 ppb,回收率在90—110%之内,变异系数<±10%。     

Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies

Transition metal oxides are capable of a wide range of work functions. This quality allows them to be used in many applications that involve charge transfer with adsorbed molecules, for example as heterogeneous catalysts, as charge‐injection layers in organic electronics, and as electrodes in fuel cells. Chemical and structural factors can alter transition‐metal oxide work functions, often making their work functions difficult to control. Little is known about the effects of the cation oxidation state and point defects on the oxide work function. It is necessary to understand how such chemical and structural factors affect work functions in order to controllably tune transition metal oxides for desired applications. Here, a correlation between the oxide work function and cation oxidation state is demonstrated. This correlation is attributed to the change in cation electronegativity with oxidation state. A model is presented that relates the work function to the oxygen deficiency for d⁰ oxides in the limit of dilute oxygen vacancies. It is proposed that the rapid initial decrease in work function, observed for d⁰ oxides, is caused by an increase in the density of donor‐like defect states. It is also shown that oxides tend to have decreased work functions near a metal/metal‐oxide interface as a consequence of the relationship between defects and work function. These insights provide guidelines for tuning transition metal oxide work functions.     

Metallic Zinc Anode Working at 50 and 50 mAh cm−2 with High Depth of Discharge via Electrical Double Layer Reconstruction

Achieving high-rate and high-areal-capacity Zn anode with high depth of discharge (DOD) offers a bright future for large-scale aqueous batteries. However, Zn deposition suffers from severe dendrite growth and side reactions, which compromises achievable lifetime. Herein, an electrical double layer (EDL) reconstruction strategy is proposed by employing acetone as electrolyte additive to fully address these issues. Experimental and theoretical simulation results reveal that the adsorption priority of acetone to water on Zn creates a water-poor inner Helmholtz layer. Meanwhile, the intense hydrogen bonding effect between acetone and water confines the activity of free water and weakens the Zn²⁺ solvation in the outer Helmholtz layer and diffusion layer. Such ion/molecule rearrangement in EDL suppresses hydrogen evolution, facilitates the desolvation process, and promotes the Zn²⁺ diffusion kinetics, which guides homogeneous Zn nucleation and uniform growth, even in extreme situations. At both ultrahigh current density of 50 mA cm⁻² and areal capacity of 50 mAh cm⁻², the addition of 20 v/v% acetone in 2 m ZnSO₄ extends the lifespan of Zn//Zn symmetric cells from 12 to 800 h, with a high DOD of 73.5%. The effectiveness of this strategy is further demonstrated in the Zn-MnO₂ full batteries at wide temperature range from −30 to 40 °C.     

Ultraefficient Non-Doped Deep Blue Fluorescent OLED: Achieving a High EQE of 10.17% at 1000 cd m−2 with CIEy<0.08

The pursuit for efficient deep blue material is an ever-increasing issue in organic optoelectronics field. It is a long-standing challenge to achieve high external quantum efficiency (EQE) exceed 10% at brightness of 1000 cd m⁻² with a Commission International de L'Eclairage (CIE_y) <0.08 in non-doped organic light-emitting diodes (OLEDs). Herein, this study reports a deep blue luminogen, PPITPh, by bonding phenanthro[9,10-d]imidazole moiety with m-terphenyl group via benzene bridge. The non-doped OLED based on PPITPh exhibits an exceptionally high EQE of 11.83% with a CIE coordinate of (0.15, 0.07). The EQE still maintains 10.17% at the brightness of 1000 cd m⁻², and even at a brightness as high as 10000 cd m⁻², an EQE of 7.5% is still remained, representing the record-high result among non-doped deep-blue OLEDs at 1000 cd m⁻². The unprecedented device performance is attributed to the reversed intersystem crossing process through hot exciton mechanism. Besides, the maximum EQE of orange phosphorescent OLED with PPITPh as host is 32.02%, and remains 31.17% at the brightness of 1000 cd m⁻². Such minimal efficiency roll-off demonstrates that PPITPh is also an excellent phosphorescent host material. The result offers a new design strategy for the enrichment of high-efficiency deep blue luminogen.     

0.9 V rail-to-rail constant gm CMOS amplifier input stage

Presented is a 0.9 V rail-to-rail constant g_m CMOS amplifier input stage consisting of complementary differential pairs and a g_m control circuit. The g_m control circuit eliminates the g_m dead zone, which occurs in the conventional rail-to-rail amplifier with ultra-low supply voltages. The proposed amplifier input stage has a constant g_m that varies by ±2.3% for rail-to-rail input common-mode levels. To verify the proposed amplifier design, an experimental prototype operational amplifier is also implemented using 0.35 mm standard CMOS technology.     

Investigation of pattern coating on mould roller in roller-reversal imprint process

In order to prepare large area micropatterns with certain profile (certain aspect ratio) on kinds of substrates, especially on flexible substrate, a novel roller-reversal imprint (RRI) process is proposed, which starts with pattern coating of an ink (mostly a liquefied electronics materials, such as a semiconductor polymer) on a mould roller and ends with transferring the ink already patterned on the roller to the substrate. One of the critical challenges in RRI process is ensuring ink pattern coating and full filling to the microcavities on mould roller, which is one of the preconditions to achieve the pattern transferred on substrate with precise profile. In this paper, an ink coating model is established to reveal the ink filling situations versus different profile of microcavities on mould roller. Simulations show that, in the coating process, as the contact angle of ink on mould increasing, three basic filling situations, i.e., full filling, partial filling, and non-filling, will occur. In order to demonstrate the requirement of full filling, critical contact angle for full filling is proposed to distinguish the full filling and partial filling, and it is deeply dependant on the cross-sectional parameters (such as linewidth and the aspect ratio) of microcavities on mould roller. The critical contact angle is the watershed between full filling and partial filling, so it can be used as a guideline to choose the appropriate match between the surface energy of ink and mould to achieve full filling in RRI process. Experiments prove that the ink filling model and its simulation results are basically right, the cross-sectional parameters of microcavities on mould play great important roles to the critical contact angle, and only when the actual contact angle is smaller than the corresponding critical value, full filling can be obtained.     

Employing vertical dielectric layers to improve the operation performance of flash memory devices

A number of new device structures have been reported recently to improve the operation performance of flash memory. In this work, a novel flash device with a vertical dielectric layer in the depletion region is proposed through simulation approach. The simulation results show that the employment of a vertical dielectric layer in the depletion region can improve the operation performance of flash memory. The improvement can be attributed to a lower potential in the central region of device channel and the increase of the potential drop in the channel direction near drain junction. Thus, this proposed vertical dielectric layer increases the electrical field of the channel and thus the probability and the momentum of electron injection. The operation characteristics of the flash device with a vertical dielectric layer in the depletion region of source and drain are superior to those without. In addition, it is found that a vertical dielectric layer with lower dielectric constant can enhance the operation performance of flash device even more.     

LED灯的液态金属冷却方法试验研究

提出LED灯的液体金属散热新方法,并研制出基于电磁泵(EP)驱动的散热系统原型。实验结果表明:在LED灯的输入功率达到25.7 W时,液态金属散热系统可将其基座温度维持在33.1℃,从而确保LED芯片安全运行。评估了EP输入功率、肋片及风扇对液态金属散热系统散热效果的影响。