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81.
82.
秦山核电厂气载放射性释放的环境影响 总被引:3,自引:1,他引:2
本文评价了秦山核电厂气载放射性流出物对环境的影响。应用现场及风洞大气扩释实验结果和厂址周围的人口与食谱调查资料,估算了秦山核电厂在正常运行和事故条件下释放的气载放射性流出物对公众产生的个人有效剂量当量和集体有效剂量当量。计算结果表明,正常运行时厂址边界(0.5km)处的最大个人有效剂量当量为2.7×10~(-2)mSv/a,该剂量的大部分来自~(137)Cs 的食入(主要由地表湿沉积引起);80km 范围内的集体有效剂量当量为1.1人·Sv/a,归一化集体有效剂量当量为3.7人·Sv/GW(e)·a。文中还给出了事故情况下剂量估算结果。 相似文献
83.
Two new modeling and simulation approaches for Simultaneous Switching Noise (SSN) are described and compared to “brute force”
simulation by SPICE. Both simulation accuracy and simulation run-time are considered. The two new approaches are: 1) the “effective
inductance” method, in which an approximate, very efficient method of extracting an SSN L
eff
is utilized; and 2) the “macromodel” method, in which the complex inductance network responsible for SSN is represented by
only a few dominant poles in the frequency domain and the time domain response is obtained by an efficient convolution algorithm.
Both approaches are shown to be accurate and fast, but only the effective inductance algorithm is robust in numerical convergence.
Received: 19 March 1997 / Accepted: 25 March 1997 相似文献
84.
The extent of the dominant singular field is investigated for a finite crack under stress wave loading. Using a boundary integral equation method the complete solution as well as the near field solution is determined. A comparison of the two fields indicates that the singular field dominates within a small domain at the crack tip. The size of the dominance region in the dynamic case may be very different from that in the static case. 相似文献
85.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
86.
An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature. 相似文献
87.
Clinical manifestations and peripheral blood lymphocyte subset changes were studied in patients with myasthenia gravis (MG) to elucidate the mechanism of clinical improvement following treatment, with thymectomy (Tx) or glucocorticoid (GC) therapy. The changes found were: 1. There was a significant increase in percentages of CD3+, CD29+ CD4+ cells and CD4/CD8 ratio and a significant decrease in percentages of CD8+ and CD16,56+ cells in patients who had never been treated with any immune therapy. 2. After Tx or GC therapy, CD3+ and CD4+, CD29+ cells were decreased, but the number CD19+ and CD16, CD56 cells did not change. 3. Tx had a special effect on CD8+ cells. In most of the patients who showed clinical improvement after Tx, CD8+ cells were increased and CD4/CD8 ratio wad decreased. 4. Anti-acetylcholine receptor (AChRAb) titers were markedly decreased after GC therapy. These results indicate that there were obvious abnormalities in cell-mediated immunity in addition to those in humoral immunity in myasthenia gravis. These abnormalities tended to be normalized after Tx or GC therapy. 相似文献
88.
Tahui Wang Chimoon Huang Chou P.C. Chung S.S.-S. Tse-En Chang 《Electron Devices, IEEE Transactions on》1994,41(9):1618-1622
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at Vg ≃0.5 Vd in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states 相似文献
89.
The polarization-dependent absorption and emission spectra of the 4I13/2-4I15/2 transition (λ~1.5 μm) in single crystal bulk Er:LiNbO3 have been measured. Low-temperature (10 K) measurements of the Stark split energy levels of these two manifolds indicate at least two Er3+ sites. McCumber theory is applied to determine the Er:LiNbO3 absorption and emission cross sections. These values are used to calculate the gain characteristics of Er:LiNbO3 channel waveguides. Calculations indicate that a gain of 10 dB is achievable in a waveguide of several centimeters using ~20-mW pump power 相似文献
90.