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121.
This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.  相似文献   
122.
The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.  相似文献   
123.
本文对单元串联式多电平高压变频器的起源和现状进行了总结,同时从无速度传感器矢量控制、大容量化、冗余设计等方面对该技术未来的发展趋势进行了展望。  相似文献   
124.
125.
针对电信运营商在构建内部数据通信网(DCN)时遇到的各应用系统的隔离问题,详细介绍了目前几种主流的虚拟专用网(VPN)技术,并进行分析比较,最后提出了运营商内部数据通信网的VPN解决方案。  相似文献   
126.
The explosion of on-line information has given rise to many manually constructed topic hierarchies (such as Yahoo!!). But with the current growth rate in the amount of information, manual classification in topic hierarchies results in an immense information bottleneck. Therefore, developing an automatic classifier is an urgent need. However, classifiers suffer from enormous dimensionality, since the dimensionality is determined by the number of distinct keywords in a document corpus. More seriously, most classifiers are either working slowly or they are constructed subjectively without any learning ability. In this paper, we address these problems with a fair feature-subset selection (FFSS) algorithm and an adaptive fuzzy learning network (AFLN) for classification. The FFSS algorithm is used to reduce the enormous dimensionality. It not only gives fair treatment to each category but also has ability to identify useful features, including both positive and negative features. On the other hand, the AFLN provides extremely fast learning ability to model the uncertain behavior for classification so as to correct the fuzzy matrix automatically. Experimental results show that both FFSS algorithm and the AFLN lead to a significant improvement in document classification, compared to alternative approaches.  相似文献   
127.
数值试井在白6-2井测试资料分析评价中的应用   总被引:1,自引:0,他引:1  
数值试井是在近来发展的一项新的试井解释技术,具有处理非均质,复杂边界油气藏问题的优点,弥补了常规解析试井技术的不足。运用数值试井解释技术,结合动、静态资料,通过对白6-1断块白6-2井测试资料的综合分析评价,确定了储层渗流参数,落实了该气藏的边界情况,为该断块下一步开发提供可靠依据。  相似文献   
128.
皖北地区夏季高温多雨,冬季严寒,气候较为恶劣,在该地区宜推广应用SMA混合料铺筑表面层。在进行SMA配合比设计时,必须严格控制原材料的质量,经过精心设计、精心施工,才能修建出一条成功的SMA路面。  相似文献   
129.
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.  相似文献   
130.
Al、Mo含量对铸造钛合金力学性能的影响   总被引:1,自引:0,他引:1  
运用正交实验 ,考察了Al、Mo含量对Ti Al Mo 1Zr系铸造钛合金力学性能的影响。试验结果表明 :随Al、Mo含量提高 ,铸造合金的强度增加 ,塑性和冲击韧性降低 ,但Al、Mo的交互作用却使合金塑性提高 ,强度和冲击韧性降低  相似文献   
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