Modus Operandi of Simultaneous Covering Synthesis from Precursor Heterogeneity for Shelled Nanorods for Multipotent Cancer Theranostics

The synthesis of nanostructures using homogeneous precursors in the solution phase is widely used to achieve uniformity and well‐defined morphological control. However, drawbacks such as the lack of diversity due to the limited reaction rate modulation exist. One‐step, core–shell nanorod formation using simultaneous covering synthesis using solid and ionic heterogeneous precursors is proposed in this study. A Te‐Bi₂Te₃/TeO₂ core–shell structure is successfully synthesized by precisely controlling various influencing factors, including concentration, temperature, and pH, and its physicochemical and photochemical properties are thoroughly investigated. The proposed nanostructure overcomes the oxidation susceptibility of Te and can be applied to multipotent cancer theranostics in vitro and in vivo in combination with computed tomography imaging.     

A reconfigurable microstrip antenna for switchable polarization

A novel reconfigurable microstrip antenna with switchable polarization sense is proposed. The proposed antenna has a simple structure, consisting of a corner-truncated square radiating patch, four small triangular conductors, and a microstrip line feed. Using independently biased PIN diodes on the patch, it can produce linear polarization, or left- or right-hand circular polarization according to bias voltages. From the measured results, low cross-polarization levels when operated in the linear state and good axial ratios in the circular state are observed.     

Performance of Efficient Signal Detection for LED-ID Systems

In this paper, effects of reader-to-reader interference are investigated for LED identification (LED-ID) system in a multi-reader environment. The LED-ID readers typically use different channels to avoid collision between readers. However, in-channel collision usually happens in terms of interrogation range. A reader-to-reader interference scenario is proposed, and nominal interrogation range of a desired reader is derived from this model. In order to evaluate the LED-ID reader-to-reader interference quantitatively, an efficient detection scheme is proposed and simulated by employing spreading sequence. The spreading sequence is inserted between each user’s frame formats. In the receiver, the desired signal is detected by using correlation among inserted spreading sequences. From simulation results, it is confirmed that the proposed scheme is very effective to enhance reliability of LED-ID communication systems.     

Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip‐Coating

The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V^?1 s^?1) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).     

Automatic Transformation of Membrane‐Type Electronic Devices into Complex 3D Structures via Extrusion Shear Printing and Thermal Relaxation of Acrylonitrile–Butadiene–Styrene Frameworks

This work demonstrates a means of automatic transformation from planar electronic devices to desirable 3D forms. The method uses a spatially designed thermoplastic framework created via extrusion shear printing of acrylonitrile–butadiene–styrene (ABS) on a stress‐free ABS film, which can be laminated to a membrane‐type electronic device layer. Thermal annealing above the glass transition temperature allows stress relaxation in the printed polymer chains, resulting in an overall shape transformation of the framework. In addition, the significant reduction in the Young's modulus and the ability of the polymer chains to reflow in the rubbery state release the stress concentration in the electronic device layer, which can be positioned outside the neutral mechanical plane. Electrical analyses and mechanical simulations of a membrane‐type Au electrode and indium gallium zinc oxide transistor arrays before and after transformation confirm the versatility of this method for developing 3D electronic devices based on planar forms.     

A process simplification scheme for fabricating CMOS polycrystalline-Si thin film transistors

A process simplification scheme for fabricating CMOS poly-Si thin-film transistors (TFTs) has been pro-posed, which employs large-angle-tilt-implantation of dopant through a gate sidewall spacer (LATITS). By this LATITS scheme, a lightly doped drain region under the oxide spacer is formed by low-dose tilt implantation of phosphorus (orboron) dopant through the spacer, and then the n+-source/drain (n+-S/D) (or p+-S/D) region is formed via using the same photo-mask layer during CMOS integration. For both n-TFT and p-TFT devices, as compared to the sample with conventional single n+-S/D (or p+-S/D) structure, the LATITS scheme can cause an obviously smaller leakage current, due to more gradual dopant distribution and thus smaller electric field. In addition, the resultant on-state currents only show slight degradation for the LATITS scheme, As a result, by the LATITS scheme, CMOS poly-Si TFT devices with an on/off current ratio well above 8 orders may be achieved without needing extra photo-mask layers during CMOS integration.     

Disclosing the Role of Defect-Engineered Metal–Organic Frameworks in Mixed Matrix Membranes for Efficient CO2 Separation: A Joint Experimental-Computational Exploration

Incorporation of defects in metal–organic frameworks (MOFs) offers new opportunities for manipulating their microporosity and functionalities. The so-called “defect engineering” has great potential to tailor the mass transport properties in MOF/polymer mixed matrix membranes (MMMs) for challenging separation applications, for example, CO₂ capture. This study first investigates the impact of MOF defects on the membrane properties of the resultant MOF/polymer MMMs for CO₂ separation. Highly porous defect-engineered UiO-66 nanoparticles are successfully synthesized and incorporated into a CO₂-philic crosslinked poly(ethylene glycol) diacrylate (PEGDA) matrix. A thorough joint experimental/simulation characterization reveals that defect-engineered UiO-66/PEGDA MMMs exhibit nearly identical filler–matrix interfacial properties regardless of the defect concentrations of their parental UiO-66 filler. In addition, non-equilibrium molecular dynamics simulations in tandem with gas transport studies disclose that the defects in MOFs provide the MMMs with ultrafast transport pathways mainly governed by diffusivity selectivity. Ultimately, MMMs containing the most defective UiO-66 show the most enhanced CO₂/N₂ separation performance—CO₂ permeability = 470 Barrer (four times higher than pure PEGDA) and maintains CO₂/N₂ selectivity = 41—which overcomes the trade-off limitation in pure polymers. The results emphasize that defect engineering in MOFs would mark a new milestone for the future development of optimized MMMs.     

Physicochemically Stable Polymer‐Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications

A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane‐terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic‐oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS‐coupled SiO₂ or AlO_x dielectrics, various vacuum‐ and solution‐processable organic semiconductors can develop highly ordered crystalline structures that provide higher field‐effect mobilities (μ_FETs) than other surface‐modified systems, and negligible hysteresis in organic field‐effect transistors (OFETs). In particular, the use of PS‐coupled AlO_x nanodielectrics enables a solution‐processable triethylsilylethynyl anthradithiophene OFET to operate with μ_FET ～ 1.26 cm² V^?1 s^?1 at a gate voltage below –1 V. In addition, a complementary metal‐oxide semiconductor‐like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS‐coupled SiO₂ dielectric.     

Hydrogenated amorphous silicon thin film transistor fabricated onplasma treated silicon nitride

We have demonstrated that the performance of the inverted staggered, hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) is improved by a He, H₂, NH₃ or N₂ plasma treatment for a short time on the surface of silicon nitride (SiN _x) before a-Si:H deposition. With increasing plasma exposure time, the field-effect mobility increase at first and then decrease, but the threshold voltage changes little. The a-Si:H TFT with a 6-min N₂ plasma treatment on SiN_x exhibited a field effect mobility of 1.37 cm²/Vs, a threshold voltage of 4.2 V and a subthreshold slope of 0.34 V/dec. It is found that surface roughness of SiN_x is decreased and N concentration in the SiN _x at the surface region decreases using the plasma treatment     

Improvement of kink and beam steering characteristics of 0.98-μmGaInAs-GaInP high-power lasers utilizing channel ion implantation

We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation