Web-based systems design: a study of contemporary practices and an explanatory framework based on “method-in-action”

This paper reports the findings of a detailed study of Web-based systems design (WBSD) practices in Ireland based on data collected over a 3-year period (2002–2005), the objectives of which were to (1) contribute towards a richer understanding of the current “real-world” context of WBSD by characterising the profile of a typical project (team size, timeframe, nature of requirements, etc.) and identifying the key challenges, constraints, and imperatives (i.e. “mediating factors”) faced by Web-based system designers, and (2) understand how those contextual parameters and mediating factors influence the activity of WBSD as regards the selection and enactment of whatever design practices are therefore engaged (i.e. the use of methods, procedures, etc.). Data was gathered through a survey which yielded 165 usable responses, and later through a series of semi-structured qualitative interviews. Using grounded theory, an explanatory conceptual framework is derived, based on an extension of the “method-in-action” model, the application of which to WBSD has not been previously investigated in depth. It is proposed that this framework of WBSD issues is valuable in a number of ways to educators, researchers, practitioners, and method engineers.     

聚吡咯导电材料合成方法的进展

本文对聚吡咯及聚吡咯导电复合物的合成方法进行了综述。     

各种状态的液体通过核孔膜的规律

介绍了液体通过核孔膜规律方面取得的新认识，包括：（１）纯净液体通过核孔膜的规律；（２）核孔膜测定液体粘滞系数的各种方法；（３）各种物质溶液浓度的核孔膜测定；（４）液相混合物快速分离和化学分离；（５）流体中固体微粒对核孔膜的堵塞及其公式；（６）用核孔膜滤除液中各各斩规律。     

采样定理的内在不自洽性和工程应用的局限性——采样定理和奈奎斯特准则研究·上篇

推导证明了作为通信理论基石之一的采样定理及其公式存在着两个矛盾：内在不自洽性，即采样定理与其公式的推导前提条件相矛盾；采样定理在工程实际应用时的严重局限性     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.