npn AlGaN/GaN HBT模型与特性分析

基于实验数据对GaN材料的少子寿命和碰撞电离率进行了建模,应用漂移-扩散传输模型开展了npnAlGaN/GaN异质结双极晶体管的特性研究,给出了器件导通电压、偏移电压和饱和电压的解析式.结果表明:实际器件导通电压、偏移电压及饱和电压较大的原因主要是高基区电阻和基区接触的非欧姆特性,为器件的工艺制造提供了理论指导.     

Development of a low cost microwave mixer using a broad-band substrate integrated waveguide (SIW) coupler

A low cost single-balanced mixer is designed using a newly designed 90/spl deg/ substrate integrated waveguide (SIW) 3-dB coupler, which takes the advantages of low cost, low profile, and high performance. An X-band single-balanced SIW mixer is designed and fabricated with a standard printed circuit board process. Measured conversion loss of 6.8dB and the wide-band response from 8.5 to 12GHz are presented.     

MCM用氮化铝共烧多层陶瓷基板的研究

通过实验优化AlN(氮化铝)瓷料配方及排胶工艺,对共烧W(钨)导体浆料性能及AlN多层基板的高温共烧工艺进行了研究,并对AlN多层基板的界面进行了扫描电镜分析。采用AlN流延生瓷片与W高温共烧的方法,成功地制备出了高热导率的AlN多层陶瓷基板,其热导率为190 W/(m·K),线膨胀系数为4.6106℃1(RT~400℃),布线层数9层,W导体方阻为9.8 m,翘曲度为0.01 mm/50 mm,完全满足高功率MCM的使用要求。     

高硬度耐磨电弧喷涂管状丝材的研究

利用自熔性合金与非晶态材料的特点，研制了Fe—B系管状丝材作为电弧喷涂材料，其形成的涂层具有良好的结合强度、低的孔隙率、高的硬度和耐磨损性能。     

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��This work gives the concept about oil-cut,gas-cut, kick,grave kick,blowout and failure in controlling blowout and summarizes the type of failure in controlling blowout,the objective and man-made reasons causing blowout and the measures to prevent and control well blowout.     

Induction of immune tolerance with heart-thymus composite allotransplantation in rats

Objective To study on the role of thymus transplantation for heart allograft in rats. Methods Vascularized heart-thymus combined transplantation was performed with microsurgical technique. Graft survival, histopathology, level of IL-2, IL-4 and its mRNA expression in serum and cardiac grafts were investigated. Results Heart-thymus combined transplantation achieved effect in the prolongation of cardiac graft survival with short-term administration of cyclosporine. Conclusions Vascularized thymus transplantation induced immune tolerance in thymectomized rats.     

Design, modeling, and hardware correlation of a 3.2Gb/s/pair memory channel

With the rapid advance of silicon process technology, it is now possible to design input/output (I/O) circuits that operate at multigigabit data rates. As a result, accurate modeling and analysis of high-speed interconnect systems is essential to optimize the performance of the overall system. This paper describes the interconnect design, modeling, simulation, and characterization methodologies that are essential to achieve multigigabit data rates. It focuses on the physical layer verification and hardware correlation of functional systems and silicon to ensure robust system operation over 3.2Gb/s data rate using conventional low-cost packaging and printed circuit board (PCB) technologies. In order to capture conductor and dielectric losses, as well as other high-frequency effects of three-dimensional structures, accurate measurement-based simulation techniques that directly incorporate frequency-domain parameters from measurement or electromagnetic solver parameters into circuit simulation tools using fast Fourier transform (FFT) and bandlimiting windowing techniques are developed. Finally, simulation waveforms are correlated with prototypes at both component and system levels in both time and frequency domains.     

Possible tactics to improve the growth of single-walled carbon nanotubes by chemical vapor deposition

The growth time, growth mode and the method of preparing the supported catalysts play an important role in the growth of single-walled nanotubes (SWNTs). Their effects on the chemical vapor deposition (CVD) growth of SWNTs with MgO-supported catalysts were investigated in this study. It is shown that the growth rate of SWNTs was large during the initial few minutes of growth, however the quality of the tubes was low owing to the formation of many defects. Long term growth may favor the formation of tubes with high quality and high yield, but the introduction of other forms of carbon (impurities) is also unavoidable. There was a balance between the increase in yield and quality and sacrifice of the purity during growth of SWNTs. MgO-supported catalysts prepared by the co-precipitation method were found to be more effective for the synthesis of SWNTs than those prepared by the widely used impregnation method. The size and dispersion state of the catalyst were found to be crucial in enhancing the growth of SWNTs. In addition, growth on the surface of SWNTs over nanosized catalyst films was shown to be more favorable for the synthesis of tube products with higher quality, yield and purity.     

Impedance boundary conditions in a hybrid FEM/MOM formulation

When numerically modeling structures with imperfect conductors or conductors coated with a dielectric material, impedance boundary conditions (IBCs) can substantially reduce the amount of computation required. This paper incorporates the IBC in the finite-element method (FEM) part of a FEM/method of moments (FEM/MoM) modeling code. Properties of the new formulation are investigated and the formulation is used to model three practical electromagnetic problems. Results are compared to either measured data or other numerical results. The effect of the IBC on the condition number of hybrid FEM/MoM matrices is also discussed.     

天康面粉公司制粉车间局部技改介绍

山东巨野国家粮食储备库天康面粉公司制粉车间始建于2000年,设计能力为处理小麦100t/d.主要设备有FMFQ10×2/6×2磨粉机8台,FS-FG6×24C高方筛3台,FQFD50×2×3清粉机2台,磨辊总接触长度12000 mm,平筛总筛理面积138.8 m2,单位磨辊接触长度12 mm/(100kg·d),单位平筛筛理面积0.14 m2/(100kg·d).麦间清理工艺(包括初清)为4筛2打2去石3磁选2着水,粉间工艺为488M1S2T4P3Br.