Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A STUDY OF THE PRIMARY PHASE OF FOOD FREEZE-DRYING IN VACUO

In the development of a novel freeze-drying technique in a fluidized bed at atmospheric pressure, a parallel study was undertaken using a conventional vacuum equipment. Two kinetically distinct phases were observed during freeze drying of representative Pood samples:

(1) a period during which the rate of drying was constant and (2) a second period during which the drying rate sufferedcontinual reduction. This paper focused attention on the primary drying period which corresponded with the kinetics of sublimation of pure     

High-voltage bridge for measuring spontaneous polarization,dielectric constants,and conductivity of ferroelectric crystals

Translated from Izmeritel'naya Tekhnika, No. 9, pp. 34–35, September, 1989.     

IEEE Richard Harold Kaufmann Award Call for Nominations

This letter further discusses the difference between different definitions of voltage unbalance. Contrary to an earlier letter (see P. Pillay et al., ibid., vol.5, p.50-1, 2001), it is concluded that different definitions may give significantly different results. The two IEEE definitions that were not discussed in the earlier letter give different results and both deviate significantly from the true value (ratio of negative, and positive-sequence voltage) when a zero-sequence component is present.