3He Melting Pressure Measurements in High Magnetic Fields

Experimental methods and preliminary results of high-precision measurements of the ³ He melting curve in high magnetic fields have been described. The purpose of this work is twofold. One is to establish a reliable millikelvin temperature scale in high fields (T 10 mK, B 15 T), The other is to investigate a high field region of the magnetic phase diagram of solid ³ He by measuring the melting pressure down to temperatures below 1 mK. Besides the two superfluid transitions, the phase transition temperatures between the spin ordered solid and the paramagnetic solid, T _HFP , were determined at B = 12 and 10 T with good accuracy, which is an extension of previous measurements up to 8 T. The present T _HFP (B) line can not be scaled to that at a higher density with a single Grüneisen parameter, indicating a variation of density dependencies of the multiple-spin exchange interactions.     

Experimental measurement on tangential momentum accommodation coefficient in a single microtube

The tangential momentum accommodation coefficient (TMAC) was investigated experimentally from the mass flow rate through a single microtube under the slip flow and the early part of the transition regime. The measurements were carried out by the constant-volume method under the mean Knudsen number smaller than 0.3, which is based on the mean pressure of the inlet and the outlet of the microtube, to apply the second-order slip boundary condition. To measure TMACs on various materials, quite large microtube was employed, which require the reduction in leakage. TMAC was obtained from the slip coefficient determined by the relation of the mass flow rate to the mean Knudsen number. The obtained mass flow rate was well explained by the theoretical equation. TMACs of deactivated-fused silica with argon, nitrogen, and oxygen were measured, showing the tangential momentum was not accommodated completely to the surface, and the values showed good agreement with previous studies. From the comparison between microtubes with different inner diameter, it is showed that TMAC is determined mainly by gas species and surface material.     

Effect of temperature on humido-sensitive conducting polymer actuators

Temperature dependence of water vapor sorption and electro-active polymer actuating behavior of free-standing films made of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT/PSS) was investigated by means of sorption isotherm and electromechanical analyses. The non-porous PEDOT/PSS film, having a specific surface area of 0.13 m² g^?1, sorbed water vapor of 1080 cm³(STP) g^?1, corresponding to 87 wt%, at relative water vapor pressure of 0.95. A temperature rise from 25 °C to 40 °C lowered sorption degree, indicative of an exothermic process, where isosteric heat of sorption decreased with increasing water vapor sorption and the value reached 43.9 kJ mol^?1, being consistent with the heat of water condensation (44 kJ mol^?1). Upon application of 10 V, the film underwent contraction of 2.46% at 5 °C caused by desorption of water vapor due to Joule heating, which slightly decreased to 2.10% at 45 °C. The speed of contraction was one order of magnitude faster than that of expansion and less dependent on the temperature since water vapor sorbed in the film were forced to desorb by Joule heating. In contrast, the higher the temperature the faster the film expansion because diffusion coefficient increased as the temperature became higher.     

Negation-Limited Complexity of Parity and Inverters

In negation-limited complexity, one considers circuits with a limited number of NOT gates, being motivated by the gap in our understanding of monotone versus general circuit complexity, and hoping to better understand the power of NOT gates. We give improved lower bounds for the size (the number of AND/OR/NOT) of negation-limited circuits computing Parity and for the size of negation-limited inverters. An inverter is a circuit with inputs x ₁,…,x _n and outputs ¬ x ₁,…,¬ x _n . We show that: (a) for n=2 ^r ?1, circuits computing Parity with r?1 NOT gates have size at least 6n?log?₂(n+1)?O(1), and (b) for n=2 ^r ?1, inverters with r NOT gates have size at least 8n?log?₂(n+1)?O(1). We derive our bounds above by considering the minimum size of a circuit with at most r NOT gates that computes Parity for sorted inputs x ₁≥???≥x _n . For an arbitrary r, we completely determine the minimum size. It is 2n?r?2 for odd n and 2n?r?1 for even n for ?log?₂(n+1)??1≤r≤n/2, and it is ?3n/2??1 for r≥n/2. We also determine the minimum size of an inverter for sorted inputs with at most r NOT gates. It is 4n?3r for ?log?₂(n+1)?≤r≤n. In particular, the negation-limited inverter for sorted inputs due to Fischer, which is a core component in all the known constructions of negation-limited inverters, is shown to have the minimum possible size. Our fairly simple lower bound proofs use gate elimination arguments in a somewhat novel way.     

Limiting negations in non-deterministic circuits

The minimum number of NOT gates in a Boolean circuit computing a Boolean function f is called the inversion complexity of f. In 1958, Markov determined the inversion complexity of every Boolean function and, in particular, proved that log₂(n+1) NOT gates are sufficient to compute any Boolean function on n variables. In this paper, we consider circuits computing non-deterministically and determine the inversion complexity of every Boolean function. In particular, we prove that one NOT gate is sufficient to compute any Boolean function in non-deterministic circuits if we can use an arbitrary number of guess inputs.     

Two-stage subspace identification for softsensor design and disturbance estimation

Softsensors or virtual sensors are key technologies in industry because important variables such as product quality are not always measured on-line. In the present work, two-stage subspace identification (SSID) is proposed to develop highly accurate softsensors that can take into account the influence of unmeasured disturbances on estimated key variables explicitly. The proposed two-stage SSID method can estimate unmeasured disturbances without the assumptions that the conventional Kalman filtering technique must make. Therefore, it can outperform the Kalman filtering technique when innovations are not Gaussian white noises or the characteristics of disturbances do not stay constant with time. The superiority of the proposed method over the conventional methods is demonstrated through numerical examples and application to an industrial ethylene fractionator.     

Technique for anisotropic extension of organic crystals: application to temperature dependence of electrical resistance

We have developed a technique for the anisotropic extension of fragile molecular crystals. The pressure medium and the instrument, which extends the pressure medium, are both made from epoxy resin. Since the thermal contraction of our instrument is identical to that of the pressure medium, the strain applied to the pressure medium has no temperature dependence down to 2 K. Therefore, the degree of extension applied to the single crystal at low temperatures is uniquely determined from the degree of extension in the pressure medium and thermal contractions of the epoxy resin and the single crystal at ambient pressure. Using this novel instrument, we have measured the temperature dependence of the electrical resistance of metallic, superconducting, and insulating materials. The experimental results are discussed from the viewpoint of the extension (compression) of the lattice constants along the parallel (perpendicular) direction.     

Formation of Zirconia Solid Solutions Containing Alumina Prepared by New Preparation Method

In the system ZrO₂–Al₂O₃, a new method for preparing ZrO₂ solid solutions from ZrCl₄ and AlCl₃ using hydrazine monohydrate is investigated. c -ZrO₂ solid solutions containing up to ∼40 mol% Al₂O₃ crystallize at low temperatures from amorphous materials. The formation mechanism is discussed from IR spectral data. The values of the lattice parameter α increase linearly from 0.5072 to 0.5105 nm with increasing Al₂O₃ content. At higher temperatures, transformation of the solid solutions proceeds as follows: c ( SS ) → t ( ss ) → t ( ss ) +α-Al₂O₃→ m +α-Al₂O₃. m -ZrO₂–α-Al₂O₃ composite ceramics are fabricated by hot isostatic pressing for 2 h at 1250°C and 196 MPa. Microstructures and mechanical properties are examined, in connection with increasing Al₂O₃ content.     

Thermodynamic evaluation of the phase equilibria and glass-forming ability of the Fe–Si–B system

A thermodynamic study has been carried out on the Fe–Si–B ternary system, which is important in the development of transformer core materials and Ni-based filler metals. A regular solution approximation based on the sublattice model was adopted to describe the Gibbs energy for the individual phases in the binary and ternary systems. Thermodynamic parameters for each phase were evaluated by combining the experimental results from differential scanning calorimetry with literature data. The evaluated parameters enabled us to obtain reproducible calculations of the isothermal and vertical section diagrams. Furthermore, the glass-forming ability of this ternary alloy was evaluated by introducing thermodynamic quantities obtained from the phase diagram calculations into Davies–Uhlmann kinetic formulations. In this evaluation, the time–temperature-transformation (TTT) curves were obtained, which are a measure of the time required to transform to the minimum detectable mass of crystal as a function of temperature. The critical cooling rates calculated on the basis of the TTT curves enabled us to evaluate the glass-forming ability of this ternary alloy. The results show good agreement with the experimental data in the compositional amorphization range.     

Linear bipolar OTAs employing exponential‐law circuits

This paper presents design of linear bipolar OTAs, which are composed of two function blocks; one is an exponential‐law circuit and the other is a core cell. Multi‐tanh cells are employed as the core cell. This kind of OTA has lower power dissipation relatively to the conventional multi‐tanh cell. According as the order of the multi‐tanh core cell becomes higher, the number of circuit realization for the core cell increases. For example, we have two OTAs for the core circuit of an emitter‐coupled pair and four OTAs for the doublet core cell. Thus, we consider the generalized OTAs for an arbitrary order n of the core cell and obtain a formula to give the realization number of the linear OTAs for n. According to the formula, there must be eight OTAs in the case of n=3. All of the eight OTAs are examined. Analysis and simulation results show that the OTAs have advantage in their characteristics, such as linear input range, power dissipation, noise, and frequency response. Copyright 2004 John Wiley & Sons, Ltd.