Optimal training for block transmissions over doubly selective wireless fading channels

High data rates give rise to frequency-selective propagation, whereas carrier frequency-offsets and mobility-induced Doppler shifts introduce time-selectivity in wireless links. To mitigate the resulting time- and frequency-selective (or doubly selective) channels, optimal training sequences have been designed only for special cases: pilot symbol assisted modulation (PSAM) for time-selective channels and pilot tone-assisted orthogonal frequency division multiplexing (OFDM) for frequency-selective channels. Relying on a basis expansion channel model, we design low-complexity optimal PSAM for block transmissions over doubly selective channels. The optimality in designing our PSAM parameters consists of maximizing a tight lower bound on the average channel capacity that is shown to be equivalent to the minimization of the minimum mean-square channel estimation error. Numerical results corroborate our theoretical designs.     

分子谱线参数测量新方法

介绍了一种利用F-P腔透射峰宽度测量分子谱线参数的新方法,论文从多光束干涉叠加原理出发,推导出有样品气体吸收的F-P腔的透过率函数,F-P腔的透过率是样品气体吸收线型的函数,随着样品吸收的增加,F-P腔透射条纹宽度增加.实验测量得到的谱线强度与HITRAN2004数据库数据、谱线宽度与理论计算结果很好地一致.     

Soft error susceptibility mapping of DRAMs using a high-energy nuclear microprobe

Soft errors in 16 Mbit dynamic random access memories (DRAMs) have been investigated using proton microprobes at 400 keV with a spot size of 1 × 1 μm². The newly developed susceptibility mapping can reveal the correlation between the particle hit-position position and the susceptibility to soft errors in a DRAM. The cell-mode soft-errors were found to take place by the incidence of ions within 6 μm around a monitored cell. These errors would be induced by minority carrier diffusion in a lateral direction. This result manifests the possibility of multiple-bit errors by the incidence of an energetic particle.     

Enhanced Electron Mobility Due to Dopant‐Defect Pairing in Conductive ZnMgO

The increase of the band gap in Zn_1‐xMg_xO alloys with added Mg facilitates tunable control of the conduction band alignment and the Fermi‐level position in oxide‐heterostructures. However, the maximal conductivity achievable by doping decreases considerably at higher Mg compositions, which limits practical application as a wide‐gap transparent conductive oxide. In this work, first‐principles calculations and material synthesis and characterization are combined to show that the leading cause of the conductivity decrease is the increased formation of acceptor‐like compensating intrinsic defects, such as zinc vacancies (V_Zn), which reduce the free electron concentration and decrease the mobility through ionized impurity scattering. Following the expectation that non‐equilibrium deposition techniques should create a more random distribution of oppositely charged dopants and defects compared to the thermodynamic limit, the paring between dopant Ga_Zn and intrinsic defects V_Zn is studied as a means to reduce the ionized impurity scattering. Indeed, the post‐deposition annealing of Ga‐doped Zn_0.7Mg_0.3O films grown by pulsed laser deposition increases the mobility by 50% resulting in a conductivity as high as σ = 475 S cm^‐1.     

General reconstruction theory for multislice X-ray computed tomography with a gantry tilt

This paper discusses image reconstruction with a tilted gantry in multislice computed tomography (CT) with helical (spiral) data acquisition. The reconstruction problem with gantry tilt is shown to be transformable into the problem of reconstructing a virtual object from multislice CT data with no gantry tilt, for which various algorithms exist in the literature. The virtual object is related to the real object by a simple affine transformation that transforms the tilted helical trajectory of the X-ray source into a nontilted helix, and the real object can be computed from the virtual object using one-dimensional interpolation. However, the interpolation may be skipped since the reconstruction of the virtual object on a Cartesian grid provides directly nondistorted images of the real object on slices parallel to the tilted plane of the gantry. The theory is first presented without any specification of the detector geometry, then applied to the curved detector geometry of third-generation CT scanners with the use of Katsevich's formula for example. Results from computer-simulated data of the FORBILD thorax phantom are given in support of the theory.     

浸没式光刻的优势和可行性

浸没式光刻通过高折射率的液体充入透镜底部和片子之间的空间使光学系统的数值孔径具有显著的优势。在193nm曝光系统中,水(折射率为1.44)被选作最佳的浸入液体。通过成像模拟,现已证明ArF穴193nm雪浸没式光刻(NA=1.05～1.23)与F2穴157nm雪干法穴NA=0.85～0.93雪光刻具有几乎相同的成像性能。结合流体力学和热模拟结果,讨论了ArF浸没式曝光设备的优势和可行性。     

Logic gate for optical input using monostable-bistable transitionof serially connected resonant tunnelling transistors

The authors demonstrate a novel optical logic gate consisting of two resonant tunnelling transistors connected in series. The logic gate is characterised by an optically controlled bistability of the gate and a small optical input power of 10 μW realised by using the monostable-bistable transition of the gate     

The computed characteristics of turbulent flow and convection in concentric circular annuli. Part IV: Generalizations

This is the concluding portion of a four-part numerical investigation. The first was limited to the prediction of the velocity field, a prerequisite for the prediction of convection. The second concerned the prediction of the Nusselt number for uniform heating on the inner wall only, and the third the prediction of the Nusselt numbers for most of the other thermal boundary conditions that occur in practice. Herein, generalized predictive equations are presented for all of these conditions. The number of such equations and coefficients is minimized by the use of superposition and generalized expressions for the dependence on Re and Pr, and to some extent on the aspect ratio.     

Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Low-temperature (290°C) area-selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of an ultra-shallow sidewall (50 nm) GaAs tunnel junction. Fabricated tunnel junctions have shown a record peak current density up to 35,000 A/cm². It is shown that the tunnel junction characteristics are strongly dependent on the sidewall orientation and the AsH₃ surface treatment conditions just prior to regrowth. The effects of AsH₃ surface treatment are discussed in view of the control of surface stoichiometry.     

Fast clock synchroniser using initial phase presetting DPLL (IPP-DPLL) for burst signal reception

A fast clock synchroniser that quickly adjusts the initial phase of the DPLL output clock to the input signal (receiver detector output) at the beginning of acquisition is proposed for burst QDPSK signal reception. The synchroniser performance is given in terms of nondetection rate (NDR) of the unique word following the clock synchronisation preamble. Measured results clearly indicate that the proposed synchroniser achieves faster synchronisation than the conventional binary quantised DPLL clock synchroniser.<>