杭-宁输气管道工程定向钻穿越设计浅析

杭州-宁波天然气输气管道工程（简称杭-宁输气管道工程）是浙江省天然气长输管网主干线之一，根据工程河流穿越众多、渠塘穿越频繁的特点，对杭-宁输气管道工程水域穿越的特点和穿越方式作了总结；重点分析了水域定向钻穿越设计及需要注意的问题，为今后浙江省天然气管网建设的水域穿越设计作了探讨。     

WiMAX系统中载波与采样钟同步的研究

IEEE802．16协议采用的OFDMA技术提供了两种子信道使用方式，分别为FUSC和PUSC，结合FUSC的固有结构特点，对导频配置方法和采样钟同步算法进行更深入的忱化。提出了一种更精确的载波和采样钟同步方案。仿真结果表明，此方案所得到的载波同步估计值比普通算法更加准确，同步性能也随之有了很大的改善。     

Intermittent Phenomena in Switched Systems With High Coupling Strengths

In this paper, one kind of intermittency generated by a discontinuous system is studied. Although this system, which is composed of two switched subsystems coupled with a high strength, is nonsmooth, the mechanism of this kind of intermittency can be analyzed with several explicit relations between the intermittency characteristics and the system control parameters. In particular, estimates of "steady-state" values of the system (in the laminar phases) and a critical value for this intermittency can be derived, which are helpful in relevant control systems design. Moreover, some power laws for the observed intermittency are obtained and discussed     

液化气铜片腐蚀原因及解决措施

本文就引起液化石油气（LPG）铜片腐蚀不合格的原因进行了分析，对JX－1A精脱硫剂工业应用效果进行了探讨，结果表明JX－1A精脱硫剂在解决了LPG铜片腐蚀不合格方面有很好的效果。     

25mm厚钢板产生层间撕裂的原因和防治

层间撕裂并非是厚板独有的质量问题 ,结合工程实例 ,分析 2 5mm厚低合金钢板产生层间撕裂的原因。通过对钢材的超声波探伤检测、化学成分分析和Z向性能检测 ,指出层间撕裂主要与节点设计不当和钢材内非金属夹杂物偏析、分层有关 ,并提出了预防措施。对产生裂纹的构件视严重情况提出了不同的修补处理方法     

山西铝厂锅炉水冷壁膨胀异常原因分析及对策

针对山西铝厂160t／h锅炉在实际运行中膨胀异常的问题，对不同的施工方法下，水冷壁膨胀量是否正常这一问题进行分析，找出了水冷壁膨胀异常的原因，并提出了解决对策。     

NMR束缚流体体积确定方法及其应用条件

NMR测井不能直接测定束缚流体饱和度（Swir）和束缚总流体（BVI）体积，而是根据T1分布和有效孔隙度（φe）间接确定。其精度取决于解释T2分布所选用的方法及其相关参数。NMR测井确定VBI方法有T21截止值方法，频谱BVI（简称SBVI）方法和BVI加权函数方法。     

预应力钢-混凝土组合梁的应用与研究

回顾了预应力钢 混凝土组合梁国内外应用与研究历史 ,分析了现有规范及理论的不足 ,并指出了有待解决的问题。     

低乙烯含量抗冲聚丙烯的结构表征

采用二甲苯为溶剂，将不同乙烯含量（５％￣１５％质量）的抗冲聚丙烯用特定程序进行分级，将各样品分为室温下可溶于甲苯和不可溶于甲苯的两部分。使用＾１３Ｃ－ＮＭＲ方法和ＦＴ－ＩＲ方法对各组分进行表征，明确了乙烯链段在聚丙烯链上的分布，并在此基础上提出了产生这种链结构的聚合工艺的特点。     

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.