用于10Gbit/s传输的对接集成DFB-LD/EA-MD光源

报道了用于10Gbit/s传输的DFB激光器和EA调制器对接集成器件的设计、制作和器件特性.工作主要集中于两个方面:提高激光器和调制器间的光学耦合;通过减小调制器电容提高调制带宽.集成器件显示出了良好的静态和高频特性:阈值电流典型值为15mA,最小值为8mA;100mA激光器偏置电流下,输出功率大于10mW;对消光比、电学回波损耗和调制带宽进行了测试,3dB带宽的测量值超过10GHz.     

1.74μm压应变InGaAs/InGaAsP量子阱分布反馈激光器

制备了1.74μm脊波导结构压应变InGaAs/InGaAsP量子阱分布反馈激光器.采用低压金属有机化合物气相沉积法生长器件材料,应用应变缓冲层防止In的分凝.未镀膜的腔长为300μm的器件阈值电流为11.5mA,100mA时最大输出功率为14mW,边模抑制比为33.5dB.     

用MOCVD在偏(100)GaAs基片上生长空间规则排列的1.3μm InAs量子点

用MOCVD技术在偏(1100)GaAs衬底上生长了发光波长在1.3μm的线状空间规则排列InAs量子点.光致发光实验表明,相对于正(100)衬底,偏(100)GaAs衬底上生长的InAs量子点具有更好的材料质量,光谱有更大的强度和更窄的线宽.为了得到发光波长为1.3μm的量子点,对比研究了不同In含量的InGaAs应力缓冲层(SBL)和应力盖层(SCL)的应力缓冲作用.结果表明,增加SCL中In含量能有效延伸量子点发光波长到1. 3μm,但是随着SBL中In的增加,发光波长变化不明显,并且材料质量明显下降.     

用于产生微波信号的分布反馈激光器与Y形波导单片集成器件的研究

设计并制作了一种在Y形波导的两个分支上集成分布反馈(distributed feedback,DFB)激光器的单片集成器件.DFB激光器的布拉格光栅一次曝光形成,具有相同的光栅周期.当注入电流分别单独加载到两段DFB激光器之上时,从Y形波导端输出光波长在1565nm附近,边模抑制比大于30dB.当大于阈值且相差大于20mA的两个电流同时加载到两段DFB激光器上时,从Y形波导端输出的光谱具有双模分布,双模频率的差值可以拍频产生微波频段的信号.通过调节两段DFB的注入电流,微波信号的频率可以在13～42GHz之间快速连续调谐.这种基于Y形波导的两段DFB并联的拍频光源比传统的双段级联DFB器件有较好的光学和电学隔离,可以作为光学拍频源的一种新的实现方法.     

A Comprehensive Identification and Function Analysis of Serine/Arginine-Rich (SR) Proteins in Cotton (Gossypium spp.)

As one of the most important factors in alternative splicing (AS) events, serine/arginine-rich (SR) proteins not only participate in the growth and development of plants but also play pivotal roles in abiotic stresses. However, the research about SR proteins in cotton is still lacking. In this study, we performed an extensive comparative analysis of SR proteins and determined their phylogeny in the plant lineage. A total of 169 SR family members were identified from four Gossypium species, and these genes could be divided into eight distinct subfamilies. The domain, motif distribution and gene structure of cotton SR proteins are conserved within each subfamily. The expansion of SR genes is mainly contributed by WGD and allopolyploidization events in cotton. The selection pressure analysis showed that all the paralogous gene pairs were under purifying selection pressure. Many cis-elements responding to abiotic stress and phytohormones were identified in the upstream sequences of the GhSR genes. Expression profiling suggested that some GhSR genes may involve in the pathways of plant resistance to abiotic stresses. The WGCNA analysis showed that GhSCL-8 co-expressed with many abiotic responding related genes in a salt-responding network. The Y2H assays showed that GhSCL-8 could interact with GhSRs in other subfamilies. The subcellular location analysis showed that GhSCL-8 is expressed in the nucleus. The further VIGS assays showed that the silencing of GhSCL-8 could decrease salt tolerance in cotton. These results expand our knowledge of the evolution of the SR gene family in plants, and they will also contribute to the elucidation of the biological functions of SR genes in the future.     

A low-power 10-bit 250-KSPS cyclic ADC with offset and mismatch correction

A low power 10-bit 250-k sample per second(KSPS) cyclic analog to digital converter(ADC) is presented. The ADC’s offset errors are successfully cancelled out through the proper choice of a capacitor switching sequence.The improved redundant signed digit algorithm used in the ADC can tolerate high levels of the comparator’s offset errors and switched capacitor mismatch errors.With this structure,it has the advantages of simple circuit configuration,small chip area and low power dissipation.The cyclic ADC manufactured with the Chartered 0.35μm 2P4M process shows a 58.5 dB signal to noise and distortion ratio and a 9.4 bit effective number of bits at a 250 KSPS sample rate.It dissipates 0.72 mW with a 3.3 V power supply and occupies dimensions of 0.42×0.68 mm~2.     

神威太湖之光可靠性及可用性设计与分析

随着系统规模与集成度的快速增加,可靠性与可用性问题成为构建E级计算机系统所面临的重大挑战.针对神威太湖之光超级计算机可靠性与可用性设计与实现开展全面的分析.首先概要描述神威太湖之光超级计算机系统结构.其次,系统提出神威太湖之光超级计算机可靠性增强技术以及故障预测、主动迁移、任务局部降级等主被动容错技术,建立神威太湖之光超级计算机多层次主被动协同的容错系统.再次,根据系统故障统计信息,分析失效分布及主要失效来源,结合指数、对数正态与韦布尔3种典型寿命周期分布,对神威太湖之光系统故障间隔时间分布进行数据拟合分析.最大似然估计与K-S(Kolmogorov Smirnov)检验结果表明,对数正态分布与系统失效经验数据取得了最好的拟合度,建立神威太湖之光系统失效分布模型,并计算得出系统平均无故障时间.通过系统运行统计与实际应用测试,分析了故障预测精确度以及主动迁移、局部降低等容错技术的时间开销与容错效果.最后,在神威太湖之光超级计算机可靠性与可用性分析的基础上,提出E级计算机系统高可靠与高可用技术发展建议.     

直线运动滚动导轨副混合润滑研究

综合考虑了直线运动导轨副接触几何、预紧力、真实表面粗糙度、曲率系数等因素,建立了直线运动导轨副混合润滑数值模型,研究了滑块移动速度、曲率半径系数、工作载荷、表面粗糙度对导轨接触副润滑特性的影响,得到结论:导轨副法向工作载荷、最大赫兹接触压力和赫兹接触半径随着外加总载荷的增大而增大,平均膜厚随着载荷的增大而减小;混合润滑模型可预测导轨副在大范围工况条件下完整的润滑状态;直线运动导轨大多工作在混合润滑状态下,随着滑块移动速度的增加,接触界面由边界润滑状态向混合润滑状态转变,润滑性能逐渐提高;适当增加曲率半径系数,有利于润滑油膜的形成与稳定。     

一种Ka波段低相噪GaAs HBT压控振荡器

本文研究了一种采用GaAs HBT工艺实现的工作在Ka波段的压控振荡器。该振荡器采用共射级组态和对称式电容电感谐振腔结构以降低其相位噪声,采用π型反馈网络补偿180°相移。在片测试结果表明：偏离中心频率1 MHz处相位噪声为-96.47dBc/Hz,调谐范围为28.312到28.695GHz,在-6V电源电压下该振荡器直流功耗为18mA,振荡器芯片面积为0.7mm×0.7mm。     

Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors

We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition(ALD) and annealing of HfO₂ using the tetrakis(ethylmethyl) amino hafnium precursor. The leakage current decreases with the increase of the ALD temperature and the lowest current is obtained at 300℃ as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing(PDA) at 500℃ after ALD at 300℃ leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500℃ has been observed using X-ray photoelectron spectroscopy at the interface resulting in a proportional increase in Ga₂O₃. The increment of Ga₂O₃ after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties.