Modeling the I-V characteristics of fully depleted submicrometerSOI MOSFET's

In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 μm     

制备W－Ni－Cu钨合金的热解还原法工艺探讨

用硝酸镍、氯化铜与乙酸镍、乙酸铜的溶液分别与钨粉混合，干燥，经热解还原法制备的Ｗ－Ｎｉ－Ｃｕ钨合金，其技术指标均可满足使用要求。文章分析、讨论了这两种工艺特性及存在的问题。采用硝酸镍、氯化铜代镍、铜所制备的钨合金，在热解还原过程中产生大量有毒气体、严重的污染环境。乙酸镍、乙酸铜代镍和铜制备的钨合金，在热解还原过程中较好地解决了对环境及产品的污染问题，并保持了热解还原工艺的特性。     

Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor

~~Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor     

丙烯酸高碳醇酯的合成

介绍了降凝剂中间体丙烯酸高碳醇酯的合成和产品分离提纯方法。考察了合成条件对酯化反应的影响，结果表明，在原料丙烯酸与十八醇摩尔比1．2：1，阻聚剂对苯二酚用量占原料总量1．5％，催化剂对甲苯磺酸用量占原料总量1．5％，反应温度80-86℃，回流反应时间6h条件下，酯化率最高达89％。产品分离提纯方法与传统分离方法比较，所需分离时间短，洗涤用水量少，而产品收率远高于传统分离方法，达95％以上。     

The evaluation of domain integrals in complex multiply-connected three-dimensional geometries for boundary element methods

The treatment of domain integrals has been a topic of interest almost since the inception of the boundary element method (BEM). Proponents of meshless methods such as the dual reciprocity method (DRM) and the multiple reciprocity method (MRM) have typically pointed out that these meshless methods obviate the need for an interior discretization. Hence, the DRM and MRM maintain one of the biggest advantages of the BEM, namely, the boundary-only discretization. On the other hand, other researchers maintain that classical domain integration with an interior discretization is more robust. However, the discretization of the domain in complex multiply-connected geometries remains problematic. In this research, three methods for evaluating the domain integrals associated with the boundary element analysis of the three-dimensional Poisson and nonhomogeneous Helmholtz equations in complex multiply-connected geometries are compared. The methods include the DRM, classical cell-based domain integration, and a novel auxiliary domain method. The auxiliary domain method allows the evaluation of the domain integral by constructing an approximately C ¹ extension of the domain integrand into the complement of the multiply-connected domain. This approach combines the robustness and accuracy of direct domain integral evaluation while, at the same time, allowing for a relatively simple interior discretization. Comparisons are made between these three methods of domain integral evaluation in terms of speed and accuracy. This work was partially supported by the United States Department of Energy (DOE) grants DE-FG03-97ER14778 and DE-FG03-97ER25332. This financial support does not constitute an endorsement by the DOE of the views expressed in this paper.     

东营凹陷滚动勘探开发技术研究与应用

东营凹陷已进入勘探开发成熟期 ,滚动勘探开发是增储稳产的主要手段 ,精细油藏描述是其关键。总结滚动勘探开发的 4种方式 (老区扩边、发现新块、发现新层系和新区滚动勘探开发 ) ,对断块复杂程度提出按每平方千米内所有断层的累加长度划分的新方法 ,从构造描述、储集层描述和油藏描述方面介绍了滚动勘探开发的技术方法。以永 8断块为例 ,在层位标定、反射特征分析、构造描述流程、地震地质分析等方面进行深入分析 ,归纳精细油藏描述的具体方法 ,强调了三维地震数据体的相干分析、属性分析等技术的重要作用。应用这一滚动勘探开发技术 ,使东营凹陷每年新增滚动储量近2 0 0 0× 10 4 t。图 3参 10     

mc-Si:H/c-Si solar cell prepared by PECVD

Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer's thickness of emitter layer. The highest of V oc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the V oc of 549.8 mV, J sc of 32.19 mA·cm-2 and the cell's area of 1cm2.     

离心压缩机可倾轴瓦油封漏油问题的解决

本文全面分析了DH80—16型离心压缩机可倾轴瓦油封漏油的原因,并介绍了可倾轴瓦油封漏油问题的解决及具体实施方案。     

海底管道的沉降量计算

根据极限平衡和极限分析方法,建立了软黏土地基土体上海底管道的极限承载力计算公式。当地基处于极限状态时,基础作用于地基的全部荷载应该等于该地基土体的承载能力,根据这一关系式可以推导出海底管道沉降量的计算公式。通过对试验结果的分析,证实所采用的计算方法是可行的。