Prediction of evaporation heat transfer coefficient and pressure drop of refrigerant mixtures

A study on the prediction of heat transfer coefficient (HTC) and pressure drop of refrigerant mixtures is reported. HTCs and pressure drops of prospective mixtures to replace R12 and R22 are predicted on the same cooling capacity basis. Results indicate that nucleate boiling is suppressed at qualities greater than 20.0% for all mixtures and evaporation becomes the main heat transfer mechanism. For the same capacity, some mixtures containing R32 and R152a show 8.0–10.0% increase in HTCs. Some mixtures with large volatility difference exhibit as much as 55.0% reduction compared with R12 and R22, caused by mass transfer resistance and property degradation due to mixing (32.0%) and reduced mass flow rates (23.0%). Other mixtures with moderate volatility difference exhibit 20.0–30.0% degradation due mainly to reduced mass flow rates. The overall impact of heat transfer degradation, however, is insignificant if major heat transfer resistance exists in the heat transfer fluid side (air system). If the resistance in the heat transfer fluid side is of the same order of magnitude as that on the refrigerant side (water system), considerable reduction in overall HTC of up to 20% is expected. A study of the effect of uncertainties in transport properties on heat transfer shows that transport properties of liquid affect heat transfer more than other properties. Uncertainty of 10.0% in transport properties causes a change of less than 6% in heat transfer prediction.     

Energy release rates of crack kinking by boundary condition sensitivity analysis

The energy release rate, which is the total derivative of the energy with respect to crack length, is recognized as corresponding to the shape sensitivity analysis with the crack length change represented by the tangential component of design velocity. In this paper the sensitivity formula recently developed for a changing boundary condition has been further extended to cover crack kinking under mixed mode loading. Due to difficulty in defining the velocity field at the corner, the energy release rate at the onset of crack kinking is obtained by extrapolating the energy release rates for finite length kinked cracks. A rectangular plate with a single edge slant crack under uniform tension is taken as a numerical example. The multi-region technique in the numerical implementation of the boundary integral equation is adopted to consider the asymmetry of the problem. Excellent accuracy is observed as compared with reference analytic solutions.     

Neue Entwicklungen beim Hohlkatoden‐Gasflusssputtern. New Developments in Hollow Cathode Gas Flow Sputtering

The gas flow sputter technique was invented a few years ago particularly for the inexpensive fabrication of sophisticated ceramic layers. Meanwhile, it has matured and become increasingly powerful. Today it is on the verge of being applied in industrial fabrication processes. The present article gives an overview over the method, its characteristics and the numerous applications.     

Characteristics of nitrogen and phosphorus removal in SBR and SBBR with different ammonium loading rates

Laboratory scale experiments were conducted to study the deterioration of enhanced biological phosphorus removal (EBPR) due to influent ammonium concentration, and to compare the performance of two types of sequencing batch reactor (SBR) systems, a conventional SBR and sequencing batch biofilm reactor (SBBR). Both in SBR and SBBR, the total nitrogen removal efficiency decreased from 100% to 53% and from 87.5% to 54.4%, respectively, with the increase of influent ammonium concentration from 20 mg/l to 80 mg/l. When the influent ammonium concentration was as low as 20 mg/l (C: N: P=200: 20: 15), denitrifying glycogen-accumulating organisms (DGAOs) were successfully grown and activated by using glucose as a sole carbon source in a lab-scale anaerobic-oxic-anoxic (A₂O) SBR. In the SBR, due to the effect of incomplete denitrification and pH drop, the nitrogen and phosphorus removal efficiency decreased from 77% to 33.3% when the influent ammonium concentration increased from 20 mg/l to 80 mg/l. However, in the SBBR, simultaneous nitrification/denitrification (SND) occurred, and the nitrification rate in the aerobic phase did not change remarkably in spite of the increase in influent ammonium concentration. Phosphorus removal was not affected by the increase of influent ammonium concentration.     

A positive‐working photosensitive polyimide based on thermal cross‐linking and acidolytic cleavage

A novel positive‐working photosensitive polyimide (PSPI) based on a poly(hydroxyimide) (PHI), a crosslinking agent having vinyl ether groups, and a photoacid generator (PAG) was prepared. The PHI as a base resin of the three‐component PSPI was synthesized from 4,4′‐oxydiphthalic anhydride and 2,2′‐bis(3‐amino‐4‐hydroxyphenyl)hexafluoropropane through ring‐opening polymerization and subsequent thermal cyclization. 2,2′‐bis(4‐(2‐(vinyloxy)ethoxy)phenyl)propane (BPA‐DEVE) was used as a vinylether compound and diphenyliodonium 5‐hydroxynaphthalene‐1‐sulfonate was used as a PAG. The phenolic hydroxyl groups of the PHI and the vinyl ether groups of BPA‐DEVE are thermally crosslinked with acetal structures during prebake step, and the crosslinked PHI becomes completely insoluble in an aqueous basic solution. Upon exposure to UV light (365 nm) and subsequent postexposure bake (PEB), a strong acid generated from the PAG cleaves the crosslinked structures, and the exposed area is effectively solubilized in the alkaline developer. The dissolution behavior of the PSPI containing each 11.5 wt % of BPA‐DEVE and of the PAG was studied after UV exposure (365 nm) and PEB. It was found that the difference in dissolution rates between exposed and unexposed areas was enough to get high resolution. A fine positive pattern with a resolution of 5 μm in a 3.7‐μm‐thick film was obtained from the three‐component PSPI. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

Epitaxial growth of GaN on (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> via solution-cast seed layer formation process using Ga(mDTC)<Subscript>3</Subscript>

This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al₂O₃ substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)₃ was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)₃ concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.     

Volumetric three‐dimensional up‐conversion display medium

Abstract— Several rare‐earth‐doped fluoride crystals that are excited to emit visible light by sequential two‐photon absorption have been investigated as display‐medium candidates for static volumetric three‐dimensional displays. Dispersion of powders of these materials in a refractive‐index‐matched polymer is reported because such a medium may result in a scalable display. The scattering problem in such a medium is greatly reduced by index‐matching the polymer to the crystalline particles. An index‐matching condition that optimizes the performance is identified.     

Strains of Synechocystis sp. PCC 6803 with altered PsaC. II. EPR and optical spectroscopic properties of FA and FB in aspartate, serine, and alanine replacements of cysteines 14 and 51

A psaC deletion mutant of the unicellular cyanobacterium Synechocystis sp. PCC 6803 was utilized to incorporate site-specific amino acid substitutions in the cysteine residues that ligate the FA and FB iron-sulfur clusters in Photosystem I (PS I). Cysteines 14 and 51 of PsaC were changed to aspartic acid (C14DPsaC, C51DPsaC, C14D/C51DPsaC), serine (C14SPsaC, C51SPsaC), and alanine (C14APsaC, C51APsaC), and the properties of FA and FB were characterized by electron paramagnetic resonance spectroscopy and time-resolved optical spectroscopy. The C14DPsaC-PS I and C14SPsaC-PS I complexes showed high levels of photoreduction of FA with g values of 2.045, 1. 944, and 1.852 after illumination at 15 K, but there was no evidence of reduced FB in the g = 2 region. The C51DPsaC-PS I and C51SPsaC-PS I complexes showed low levels of photoreduction of FB with g values of 2.067, 1.931, and 1.881 after illumination at 15 K, but there was no evidence of reduced FA in the g = 2 region. The presence of FB was inferred in C14DPsaC-PS I and C14SPsaC-PS I, and the presence of FA was inferred in C51DPsaC-PS I and C51SPsaC-PS I by magnetic interaction in the photoaccumulated spectra and by the equal spin concentration of the irreversible P700(+) cation generated by illumination at 77 K. Flash-induced optical absorbance changes at 298 K in the presence of a fast electron donor indicate that two electron acceptors function after FX in the four mutant PS I complexes at room temperature. These data suggest that a mixed-ligand [4Fe-4S] cluster is present in the mutant sites of C14X-PS I and C51X-PS I (where X = D or S), but that the proposed spin state of S = 3/2 renders the resonances undetectable in the g = 2 region. The C14APsaC-PS I, C51APsaC-PS I and C14D/C51DPsaC-PS I complexes show only the photoreduction of FX, consistent with the absence of PsaC. These results show that only those PsaC proteins that contain two [4Fe-4S] clusters are capable of assembling onto PS I cores in vivo.