振动式微机械陀螺的驱动模态的研究

本文针对的是振动式微机械陀螺自动增益驱动模态的研究.通常的振动式微机械陀螺的驱动模态采用交-直流电压变化的办法来获取振幅信号,然后通过反馈去控制驱动电压,从而达到恒幅振荡的效果.本文提出了一种直接由交流信号去控制驱动电压的方法,这就避免了由交-直流电压变化造成的延时,达到实时自动增益控制的效果.     

武钢一烧降低工序能耗的实践

武钢一烧在对4台75m^2烧结机进行技术改造，优化生产工艺，提高其装备及自动控制水平的基础上，辅以科学的管理，使烧结工序能耗大大降低，取得了良好的经济效益。     

组合把持器在封闭电炉中的应用

介绍了16．5MVA封闭炉的组合把持器，结构和所选择的电炉参数及运行情况。实践证明该设备是可行的。     

分布式存储环境下的加性Schwarz方法

引言 区域分裂方法起源于古老的schwarz交替方法[l].八十年代末期,法国数学家P.L.LionS提出了schwarz交替方法的投影解释[2一4],使得人们对schwarz交替方法有了全新的认识,为其进一步发展奠定了理论基础.由于并行计算环境的逐渐成熟以及预处理技术的兴起和大规模科学计算的需要,由严格串行的scliwarz交替方法发展了多种可完全并行的     

The behavior and effect of rare earth CeO<Subscript>2</Subscript> on <Emphasis Type="Italic">in-situ</Emphasis> TiC/Al composite

Rare earth CeO₂ was investigated as an additive for in-situ preparation of TiC/Al composites using XD (exothermal dispersion) + casting technology. Experiment results showed that an optimum CeO₂ addition of 0.5 wt pct promotes the generation and refinement of TiC particles, prevents the formation of Al₃Ti, increases the wettability between the TiC ceramic particles and the Al matrix, and improves the mechanical properties of composite. A corresponding thermodynamic model was proposed for the mechanism.     

Physical and Electrochemical Properties of Doped LiFePO4 as Cathode Material for Lithium-Ion Batteries

LiFePO4 cathode material was synthesized by a solid-state reaction using doping several elements (Nb5 ,Zr4 ). The starting materials were mixed with a high-efficient sander and treated thermally under flowing N2. The samples were characterized by X-ray diffraction (XRD), field-emission gun electron microscopy (FEG), and their electrochemical performance was investigated in the term of cycling behavior. Room temperature discharge capacity about 140.6 mA·h·g-1 was obtained at C/5 rate.     

Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 C2H4 H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ～ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications.     

A hybrid rough-cut process planning for quality

This paper proposes a hybrid approach to develop a rough-cut process planning for quality. The approach aims to determine key process alternatives with an adequate process capability by systematic quality planning and assessment methods during the initial planning stage of the product development cycle. It consists of four steps: (1) identification of quality characteristics (2) planning of the process quality by combining quality function deployment (QFD) with the process failure mode and effect analysis (FMEA) (3) a selection of process alternatives, and (4) an assessment of process quality through a quality measure index, called the composite process capability (CCP). The process alternatives with an adequate CCP selected during the early design stage can then be not only used as the guidelines for detailed process planning but also as feedback for the product design and other functions for design evaluation and improvement. This approach is helpful to reduce or even eliminate the iterations of modification of process plans. A prototype system called the rough-cut process planning for quality (RPPFQ) has been developed for validation. A case study concerned with a satellite frame part is presented to illustrate the approach and prototype system in this paper.