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991.
Carr Hoi Yi Ho Qi Dong Hang Yin Winky Wing Ki Leung Qingdan Yang Harrison Ka Hin Lee Sai Wing Tsang Shu Kong So 《Advanced Materials Interfaces》2015,2(12)
The effects of a solvent additive, 1,8‐diiodooctane (DIO), on both hole and electron transport are investigated in a state‐of‐the‐art bulk‐heterojunction (BHJ) system, namely PTB7:PC71BM. For a polymer:fullerene weight ratio of 1:1.5, the electron mobility in the blend film increases by two orders of magnitude with the DIO concentration while almost no change is found in the hole mobility. For lower DIO concentrations, the electron mobility is suppressed because of large, but poorly connected PC71BM domains. For higher concentrations of DIO, the electron mobility is improved progressively and the hole mobility becomes the limiting factor. Between 1 and 5 vol%, the electron and hole mobilities are balanced. Using the Gaussian disorder model (GDM), we found that the DIO concentration modifies fundamentally the average hopping distances of the electrons. In addition, there exist alternative donor–acceptor ratios to achieve optimized PTB7:PC71BM based solar cells. It is demonstrated that the fullerene content of the BHJ film can be significantly reduced from 1:1.5 to 1:1 while the optimized performance can still be preserved. 相似文献
992.
Kyung Song Christoph T. Koch Ja Kyung Lee Dong Yeong Kim Jong Kyu Kim Amin Parvizi Woo Young Jung Chan Gyung Park Hyeok Jae Jeong Hyoung Seop Kim Ye Cao Tiannan Yang Long‐Qing Chen Sang Ho Oh 《Advanced Materials Interfaces》2015,2(1)
A key to strain engineering of piezoelectric semiconductor devices is the quantitative assessment of the strain‐charge relationship. This is particularly demanding in current InGaN/GaN‐based light‐emitting diode (LED) designs as piezoelectric effects are known to degrade the device performance. Using the state‐of‐the‐art inline electron holography, we have obtained fully quantitative maps of the two‐dimensional strain tensor and total charge density in conventional blue LEDs and correlated these with sub‐nanometer spatial resolution. We show that the In0.15Ga0.85N quantum wells are compressively strained and elongated along the polar growth direction, exerting compressive stress/strain on the GaN quantum barriers. Interface sheet charges arising from a polarization gradient are obtained directly from the strain data and compared with the total charge density map, quantitatively verifying only 60% of the polarization charges are screened by electrons, leaving a substantial piezoelectric field in each In0.15Ga0.85N quantum well. The demonstrated capability of inline electron holography provides a technical breakthrough for future strain engineering of piezoelectric optoelectronic devices. 相似文献
993.
Sunhyo Ryu Peter I. Song Chang Ho Seo Hyeonsook Cheong Yoonkyung Park 《International journal of molecular sciences》2014,15(5):8753-8772
Staphylococcus aureus (S. aureus) is a widespread cutaneous pathogen responsible for the great majority of bacterial skin infections in humans. The incidence of skin infections by S. aureus reflects in part the competition between host cutaneous immune defenses and S. aureus virulence factors. As part of the innate immune system in the skin, cationic antimicrobial peptides (CAMPs) such as the β-defensins and cathelicidin contribute to host cutaneous defense, which prevents harmful microorganisms, like S. aureus, from crossing epithelial barriers. Conversely, S. aureus utilizes evasive mechanisms against host defenses to promote its colonization and infection of the skin. In this review, we focus on host-pathogen interactions during colonization and infection of the skin by S. aureus and methicillin-resistant Staphylococcus aureus (MRSA). We will discuss the peptides (defensins, cathelicidins, RNase7, dermcidin) and other mediators (toll-like receptor, IL-1 and IL-17) that comprise the host defense against S. aureus skin infection, as well as the various mechanisms by which S. aureus evades host defenses. It is anticipated that greater understanding of these mechanisms will enable development of more sustainable antimicrobial compounds and new therapeutic approaches to the treatment of S. aureus skin infection and colonization. 相似文献
994.
Predicted Ligands for the Human Urotensin‐II G Protein‐Coupled Receptor with Some Experimental Validation
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Dr. Soo‐Kyung Kim Prof. William A. Goddard III Dr. Kyu Yang Yi Dr. Byung Ho Lee Chae Jo Lim Prof. Bartosz Trzaskowski 《ChemMedChem》2014,9(8):1732-1743
Human Urotensin‐II (U‐II) is the most potent mammalian vasoconstrictor known. 1 Thus, a U‐II antagonist would be of therapeutic value in a number of cardiovascular disorders. 2 Here, we describe our work on the prediction of the structure of the human U‐II receptor (hUT2R) using GEnSeMBLE (GPCR Ensemble of Structures in Membrane BiLayer Environment) complete sampling Monte Carlo method. With the validation of our predicted structures, we designed a series of new potential antagonists predicted to bind more strongly than known ligands. Next, we carried out R‐group screening to suggest a new ligand predicted to bind with 7 kcal mol?1 better energy than 1‐{2‐[4‐(2‐bromobenzyl)‐4‐hydroxypiperidin‐1‐yl]ethyl}‐3‐(thieno[3,2‐b]pyridin‐7‐yl)urea, the designed antagonist predicted to have the highest affinity for the receptor. Some of these predictions were tested experimentally, validating the computational results. Using the pharmacophore generated from the predicted structure for hUT2R bound to ACT‐058362, we carried out virtual screening based on this binding site. The most potent hit compounds identified contained 2‐(phenoxymethyl)‐1,3,4‐thiadiazole core, with the best derivative exhibiting an IC50 value of 0.581 μM against hUT2R when tested in vitro. Our efforts identified a new scaffold as a potential new lead structure for the development of novel hUT2R antagonists, and the computational methods used could find more general applicability to other GPCRs. 相似文献
995.
Jun Mok Ha Sung Ho Yoo Jong Hoi Cho Yong Hoon Cho Sung Oh Cho 《Nanoscale research letters》2014,9(1):1-7
Silicon (Si) nanostructures that exhibit a significantly low reflectance in ultraviolet (UV) and visible light wavelength regions are fabricated using a hydrogen etching process. The fabricated Si nanostructures have aperiodic subwavelength structures with pyramid-like morphologies. The detailed morphologies of the nanostructures can be controlled by changing the etching condition. The nanostructured Si exhibited much more reduced reflectance than a flat Si surface: an average reflectance of the nanostructured Si was approximately 6.8% in visible light region and a slight high reflectance of approximately 17% in UV region. The reflectance was further reduced in both UV and visible light region through the deposition of a poly(dimethylsiloxane) layer with a rough surface on the Si nanostructure: the reflectance can be decreased down to 2.5%. The enhancement of the antireflection properties was analyzed with a finite difference time domain simulation method. 相似文献
996.
Ning Han Fengyun Wang Zaixing Yang SenPo Yip Guofa Dong Hao Lin Ming Fang TakFu Hung Johnny C Ho 《Nanoscale research letters》2014,9(1):347
Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga2O3 nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga2O3 nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 107 Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga2O3 materials in this III-V nanowire-compatible growth condition.
PACS
77.55.D; 61.46.Km; 78.40.Fy 相似文献997.
Concrete‐filled‐steel‐tube (CFST) columns have been widely adopted for column construction of tall buildings due to its superior strength and ductility performance contributed by the composite action. However, this beneficial composite action cannot be fully developed at early elastic stage as steel dilates more than concrete and thereby causing imperfect interface bonding. Hence, it reduces the elastic strength and stiffness of the CFST columns. To resolve the problem, external confinement in the form of steel rings is proposed in this study to restrict the lateral dilation of concrete and steel at initial elastic stage. In this paper, CFST columns of various dimensions cast with normal‐strength or high‐strength concrete and installed with external steel rings were tested under uni‐axial compression. From the results, it was evident that (a) the external steel rings could restrict the lateral dilation of CFST columns and improve the interface bonding condition and (b) externally confined CFST columns had uni‐axial strength and stiffness larger than those of unconfined CFST columns. With the experimental results, an analytical model taking into account the confining effects of steel tube and rings has been developed to predict the uni‐axial strength of ring‐confined CFST columns. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
998.
Chip to chip bonding techniques using Cu bumps capped with thin solder layers have been frequently applied to 3D chip stacking technology. We studied the effect of joint microstructure on shear strength. Joints were formed by joining Sn/Cu bumps on a Si die and Sn/Cu layers on another Si die at 245–330°C using a thermo-compression bonder. Three different types of microstructures were fabricated in the joints by controlling the bonding temperature and time, (1) a Sn-rich phase with a Cu6Sn5 phase at the Cu interfaces, (2) a Cu6Sn5 phase in the interior with a Cu3Sn phase at the Cu interfaces, and (3) one single Cu3Sn phase throughout the whole joint. The joint having a single Cu3Sn phase had the highest shear strength. Specimens were aged up to 2000 h at 150°C and 180°C. During aging, the microstructures of all joints were transformed in a single Cu3Sn phase. The shear strength of the joints was very sensitive to the formation of Cu3Sn and microvoids. Microvoids formed in the solder joints with a Cu6Sn5 phase with and without a Sn-rich phase during aging and decreased the shear strength of the joints. Conversely, aging did not induce the formation of microvoids in the joints which originally had only a Cu3Sn phase and the shear strength was not decreased. 相似文献
999.
The microstructural evolution of Cu/Sn-Ag (~5 μm)/Cu Cu-bump-on-line (CuBOL) joints during isothermal annealing at 180°C was examined using a field-emission scanning electron microscope equipped with an electron backscatter diffraction (EBSD) system. Cu6Sn5 and Cu3Sn were the two key intermetallic compound (IMC) species that appeared in the CuBOL joints. After annealing for 24 h (= t), the solder had completely converted to Cu-Sn IMCs, forming an “IMC” joint with Cu/Cu3Sn/Cu6Sn5/Cu3Sn/Cu structure. EBSD analyses indicated that the preferred orientation of the hexagonal Cu6Sn5 (η) was $ (2\bar{1}\bar{1}3) $ , while the preferred orientation was (100) for the monoclinic Cu6Sn5 structure (η′). Upon increasing t to 72 h, Cu6Sn5 entirely transformed into Cu3Sn, and the IMC joint became Cu/Cu3Sn/Cu accordingly. Interestingly, the grain size and crystallographic orientation of Cu3Sn displayed location dependence. Detailed EBSD analyses in combination with transmission electron microscopy on Cu3Sn were performed in the present study. This research offers better understanding of crystallographic details, including crystal structure, grain size, and orientation, for Cu6Sn5 and Cu3Sn in CuBOL joints after various annealing times. 相似文献
1000.
The effects of the Ni(P) thickness δ Ni(P) on the interfacial reaction between an Sn-3Ag-0.5Cu solder and an Au/Pd(P)/Ni(P)/Cu pad (thickness: 0.05/0.05/0.1–0.3/20 μm) and the resulting mechanical properties were investigated using scanning electron microscopy equipped with an electron backscatter diffraction system, a focused ion beam system, electron probe microanalysis, and high-speed ball shear (HSBS) testing. Regardless of δ Ni(P), all of the Au/Pd(P)/Ni(P) surface finishes examined were completely exhausted in one reflow, exposing the Cu pad underneath the solder. Cu6Sn5 dissolved with various Ni contents, termed (Cu,Ni)6Sn5, was the dominant intermetallic compound (IMC) species at the solder/Cu interface. Additionally, Ni2SnP and Ni3P IMCs might form with the (Cu,Ni)6Sn5 in the thick Ni(P) case, i.e., δ Ni(P) = 0.3 μm, and the two IMCs (Ni2SnP and Ni3P) were gradually eliminated from the interface after multiple reflows. A mass balance analysis indicated that the growth of the Ni-containing IMCs, rather than the dissolution of the metallization pad, played a key role in the Ni(P) exhaustion. The HSBS test results indicated that the mechanical strength of the solder joints was also δ Ni(P) dependent. The combined results of the interfacial reaction and the mechanical evaluation provided the optimal δ Ni(P) value for soldering applications. 相似文献