Selective recovery of acetone-butanol-ethanol from aqueous mixture by pervaporation using immobilized ionic liquid polydimethylsiloxane membrane

An effective in situ recovery of acetone, butanol and ethanol (ABE) from fermentation broth is requisite to overcome the low productivity of ABE production. Pervaporation has proven to be one of the best methods for recovering ABE from fermentation broth. We fabricated an immobilized ionic liquid-polydimethylsiloxane (PDMS) membrane in which a [Tf₂N]^? based ionic liquid covalently bound to the PDMS backbone polymer and used it to recover ABE from aqueous solution by pervaporation. Permeate flux of immobilized IL-PDMS membrane was 7.8 times higher than that of conventional supported IL-PDMS membrane (where ILs are physically absorbed on the supported membrane). Butanol enrichment factor of immobilized IL-PDMS membrane was three-times higher than that of PDMS membrane. In addition, high enrichment factor both to acetone and ethanol as well as high operational stability of immobilized IL-PDMS membrane can enhance the efficacy of ABE recovery by employing this membrane.     

A bioassay for the detection of perchlorate in the ppb range

A bioassay for the determination of ppb (μg·L(-1)) concentrations of perchlorate has been developed and is described herein. The assay uses the enzyme perchlorate reductase (PR) from the perchlorate-reducing organism Dechloromonas agitata in purified and partially purified forms to detect perchlorate. The redox active dye phenazine methosulfate (PMS) is shown to efficiently shuttle electrons to PR from NADH. Perchlorate can be determined indirectly by monitoring NADH oxidization by PR. To lower the detection limit, we have shown that perchlorate can be concentrated on a solid-phase extraction (SPE) column that is pretreated with the cation decyltrimethylammonium bromide (DTAB). Perchlorate is eluted from these columns with a solution of 2 M NaCl and 200 mM morpholine propane sulfonic acid (MOPS, pH 12.5). By washing these columns with 15 mL of 2.5 mM DTAB and 15% acetone, contaminating ions, such as chlorate and nitrate, are removed without affecting the bioassay. Because of the effect of complex matrices on the SPE columns, the method of standard additions is used to analyze tap water and groundwater samples. The efficacy of the developed bioassay was demonstrated by analyzing samples from 2-17000 ppb in deionized lab water, tap water, and contaminated groundwater.     

Characteristics of oxygen-blown gasification for combustible waste in a fixed-bed gasifier

With increasing environmental considerations and stricter regulations, gasification of waste is considered to be a more attractive technology than conventional incineration for energy recovery as well as material recycling. The experiment for combustible waste mixed with plastic and cellulosic materials was performed in a fixed-bed gasifier to investigate the gasification behaviour with the operating conditions. Waste pelletized to a diameter of 2–3 cm and 5 cm length, was gasified in the temperature range 1100–1450 °C. The composition of H₂ was in the range 30–40% and CO 15–30% depending upon the oxygen/waste ratio. Gasification of waste due to the thermoplastic property of the mixed-plastic melting and thermal cracking shows a prominent difference from that of coal or coke. It was desirable to maintain the top temperature at 400 °C to ensure the mass transfer and uniform reaction throughout the packed bed. As the bed height was increased, the formation of H₂ and CO was increased, whilst the CO₂ decreased by the char-CO₂ reaction and plastic cracking. From the experimental results, the cold gas efficiency was around 61% and the heating values of product the gases were in the range of 2800–3200 kcal/Nm³.     

Molecular Weight‐Induced Structural Transition of Liquid‐Crystalline Polymer Semiconductor for High‐Stability Organic Transistor

In order to fabricate polymer field‐effect transistors (PFETs) with high electrical stability under bias‐stress, it is crucial to minimize the density of charge trapping sites caused by the disordered regions. Here we report PFETs with excellent electrical stability comparable to that of single‐crystalline organic semiconductors by specifically controlling the molecular weight (MW) of the donor‐acceptor type copolymer semiconductors, poly (didodecylquaterthiophene‐alt‐didodecylbithiazole). We found that MW‐induced thermally structural transition from liquid‐crystalline to semi‐crystalline phases strongly affects the device performance (charge‐carrier mobility and electrical bias‐stability) as well as the nanostructures such as the molecular ordering and the morphological feature. In particular, for the polymer with a MW of 22 kDa, the transfer curves varied little (ΔV_th = 3～4 V) during a period of prolonged bias stress (about 50 000 s) under ambient conditions. This enhancement of the electrical bias‐stability can be attributed to highly ordered liquid‐crystalline nanostructure of copolymer semiconductors on dielectric surface via the optimization of molecular weights.     

Automatic extraction of inferior alveolar nerve canal using feature-enhancing panoramic volume rendering

Dental implant surgery, which involves the surgical insertion of a dental implant into the jawbone as an artificial root, has become one of the most successful applications of computed tomography (CT) in dental implantology. For successful implant surgery, it is essential to identify vital anatomic structures such as the inferior alveolar nerve (IAN), which should be avoided during the surgical procedure. Due to the ambiguity of its structure, the IAN is very elusive to extract in dental CT images. As a result, the IAN canal is typically identified in most previous studies. This paper presents a novel method of automatically extracting the IAN canal. Mental and mandibular foramens, which are regarded as the ends of the IAN canal in the mandible, are detected automatically using 3-D panoramic volume rendering (VR) and texture analysis techniques. In the 3-D panoramic VR, novel color shading and compositing methods are proposed to emphasize the foramens and isolate them from other fine structures. Subsequently, the path of the IAN canal is computed using a line-tracking algorithm. Finally, the IAN canal is extracted by expanding the region of the path using a fast marching method with a new speed function exploiting the anatomical information about the canal radius. In experimental results using ten clinical datasets, the proposed method identified the IAN canal accurately, demonstrating that this approach assists dentists substantially during dental implant surgery.     

Antimony selenide phase-change nanowires for memory application

Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (approximately 10 Momega) and low-resistance (approximately 1 komega) states which are attributed to amorphous and crystalline states, respectively.     

Fluorination of aluminum oxide gate dielectrics using fluorine neutral/ion beams

The effect of the fluorination of aluminum oxide (Al2O3) in an oxide-nitride-aluminum oxide (SiO2-Si3N4-Al2O3, ONA) layer through fluorine (F) ion and neutral-beam treatments on the characteristics of the ONA layer was investigated to study the effect of charge-related damage during F ion beam treatment. The treatment with an F beam at approximately 10 eV energy produced an about-5-nm-thick fluorinated alumina layer by replacing the aluminum-oxygn (Al-O) bonding with Al-F bonding for both the F neutral-beam and F ion beam treatments. Moreover, no significant differences in the physical and chemical properties of the ONA layers treated with the two beams were observed. When the electrical characteristics of the metal-oxide-semiconductor (MOS) devices were compared, however, the lowest leakage current and highest memory window characteristics were observed in the MOS device fabricated with an F neutral beam, due to the Al-F layer formed on the Al2O3 surface. In the case of the MOS device fabricated with the F-ion-beam-treated ONA layer, however, lower electrical characteristics were observed compared to the MOS device fabricated with the F-neutral-beam-treated ONA layer, possibly due to the charge-related damage that occurred during the F ion beam treatment, even though the memory characteristics were improved compared to the reference due to the Al-F layer formed on the Al2O3 surface.     

Electronic structure and magnetic properties of the Ni0.2Cd0.3Fe(2.5-x)A1(x)O4 (0 < or = x < or = 0.4) ferrite nanoparticles

The structural, magnetic, and electronic structural properties of Ni0.2Cd0.3Fe(2.5-x)Al(x)O4 ferrite nanoparticles were studied via X-ray diffraction (XRD), transmission electron microscopy (TEM), DC magnetization, and near-edge X-ray absorption fine-structure spectroscopy (NEXAFS) measurements. Nanoparticles of Ni0.2Cd0.3Fe(2.5x)Al(x)O4 (0 < or = x < or = 0.4) ferrite were synthesized using the sol-gel method. The XRD and TEM measurements showed that all the samples had a single-phase nature with a cubic structure, and had nanocrystalline behavior. From the XRD and TEM analysis, it was found that the particle size increases with Al doping. The DC magnetization measurements revealed that the blocking temperature increases with increased Al doping. It was observed that the magnetic moment decreases with Al doping, which may be due to the dilution of the sublattice by the doping of the Al ions. The NEXAFS measurements performed at room temperature indicated that Fe exists in a mixed-valence state.     

Synthesis of gallium oxide nanomaterials on source material supply and their growth behavior

High purity and single crystalline beta-Ga2O3 nanomaterials with various morphologies were obtained through the simple thermal evaporation of metal gallium powder on a gold-coated silicon substrate in argon. In this report, the growth behavior of the beta-Ga2O3 nanomaterials as a function of synthesis time and source material supply was delicately surveyed via FESEM and HRTEM. The synthesis time and source material supply affected morphology, growth rate and growth mechanism of the grown nanomaterials. It was confirmed that the growth mechanism of the beta-Ga2O3 nanomaterials was varied in the order of VLS, combination of VLS and VS, and VS, by increasing the synthesis time without regard to the supply of the source material. When the source materials supply was increased, many beta-Ga2O3 nanomaterials with various morphologies, such as sheet, triangle, and belt-like were appeared. It was confirmed that the oxidation reaction of gallium and oxygen for the formation of gallium oxide nanomaterials carried out the precipitation of gallium at the same time due to the supersaturation of the gallium atoms in gold catalyst. The growth and formation mechanism of the beta-Ga2O3 nanomaterials are discussed herein.