Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

Reversible energy recovery logic circuit without non-adiabaticenergy loss

The authors propose a reversible energy recovery logic (RERL) circuit for ultra-low-energy consumption, which consumes only adiabatic energy loss and leakage current loss by completely eliminating non-adiabatic energy loss. It is a dual-rail adiabatic circuit using the concept of reversible logic with a new eight-phase clocking scheme. Simulation results show that at low-speed operation, the RERL consumes much less energy than the complementary static CMOS circuit and other adiabatic logic circuits     

A 44-GHz monolithic waveguide plane-wave amplifier with improvedunit cell design [using pHEMTs]

A 44-GHz monolithic waveguide plane-wave amplifier (PWA) with improved unit cell design is presented in this paper. The unit cell is a two-stage direct-coupled design and satisfies size, bistability, and stability requirements of the waveguide PWA. The ultra-compact unit cell had a cell size of 0.8 mm², and showed a small-signal gain of 8 dB and an output power of 15 dBm at 44 GHz with a corresponding dc-to-RF efficiency of 10%. A monolithic waveguide PWA using these unit cells showed a “flange-to-flange” gain of 5 dB, an output power of 0.3 W, and an efficiency of 2% at 44 GHz     

Thermally robust Ta2O5 capacitor for the256-Mbit DRAM

The thermal degradation of the Ta₂ O₅ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta₂O₅ with the TiN top electrode was found to be the oxidation of TiN. By placing a poly-Si layer between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850°C. The Ta₂O₅ capacitor with the TiN/poly-Si top electrode was integrated into 256-Mbit DRAM cells and excellent leakage current characteristics were obtained     

Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells

DLTS measurements have been performed on InGaAsN. Four hole traps have been identified in 1.05 eV, p-type InGaAsN and the removal of a midgap trap (0.5 eV) during annealing has been correlated with improved bulk material properties. Improvements in MOCVD growth conditions resulted in a reduction of trap density in 1.05 eV, p-type InGaAsN. Increased indium and nitrogen composition has been correlated with higher defect concentrations in p-type InGaAsN. Two electron traps have been identified in 1.15 eV, n-type InGaAsN and annealing was found to reduce the density of the shallow electron trap.     

A single-stage quasi-resonant flyback converter using a synchronous rectifier

A single-stage quasi-resonant flyback converter using the synchronous rectifier (SR) is proposed for improving power factor and system efficiency. This converter operates at the critical conduction mode with the variable frequency (VF) control to reduce the switching loss of the primary switch. The bulk capacitor voltage can be independent of the output load and kept within a practical range for the universal line input. Therefore, the problem of high-voltage stress across the bulk capacitor is reduced. The proposed converter features relatively low bulk capacitor voltage in the universal line voltage and also complies with the Standard IEC 61000-3-2 Class D limits. Moreover, since it uses the voltage-driven SR, it achieves a high efficiency. The operational principle and theoretical analysis are presented. Experimental results for a 100?W (19?V/5.3?A) adapter at the VF were obtained to show the performance of the proposed converter.     

Experimental factors that influence carbon monoxide tolerance of high-temperature proton-exchange membrane fuel cells

The poisoning effect of carbon monoxide (CO) on high-temperature proton-exchange membrane fuel cells (PEMFCs) is investigated with respect to CO concentration, operating temperature, fuel feed mode, and anode Pt loading. The loss in cell voltage when CO is added to pure hydrogen anode gas is a function of fuel utilization and anode Pt loading as well as obvious factors such as CO concentration, temperature and current density. The tolerance to CO can be varied significantly using a different experimental design of fuel utilization and anode Pt loading. A difference in cell performance with CO-containing hydrogen is observed when two cells with different flow channel geometries are used, although the two cells show similar cell performance with pure hydrogen. A different combination of fuel utilization, anode Pt loading and flow channel design can cause an order of magnitude difference in CO tolerance under identical experimental conditions of temperature and current density.     

Channel width effect for organic thin film transistors using TIPS-pentacene employed as a dopant of poly-triarylamine

The effects of the physical channel width on the characteristics of organic thin film transistors (OTFTs), made with 6,13-bis(triisopropyl-silylethynyl)-pentacene (TIPS-pentacene) embedded into poly-triarylamine (PTAA, hole conductor within an active channel), have been examined in this paper. The devices are estimated by measuring the drain-source current (I_DS) for different contact metals such as Au and Ag, at fixed gate and drain voltages. The results show that the threshold voltage (V_T) and I_DS increase with increasing channel width. Furthermore, it has been observed that the field effect mobility is dependent on V_T, which is influenced by the channel width. The OTFTs, produced using Au and Ag contacts, exhibited the highest values of mobility in the saturation regime, namely 5.44 × 10^?2 and 1.33 × 10^?2 cm²/Vs, respectively.     

Impersonation attacks on software-only two-factor authentication schemes

Two-factor authentication is favorable to securely identifying remote users in a communications network. Lately cryptographic camouflage was applied for the purpose by software-only techniques. However it can be vulnerable to impersonation attacks via interleaved sessions if a single server is compromised. This article brings to light such a hidden weak point and suggests a possible solution.     

Collectively Exhaustive Electrodes Based on Covalent Organic Framework and Antagonistic Co‐Doping for Electroactive Ionic Artificial Muscles

In this study, high‐performance ionic soft actuators are developed for the first time using collectively exhaustive boron and sulfur co‐doped porous carbon electrodes (BS‐COF‐Cs), derived from thiophene‐based boronate‐linked covalent organic framework (T‐COF) as a template. The one‐electron deficiency of boron compared to carbon leads to the generation of hole charge carriers, while sulfur, owing to its high electron density, creates electron carriers in BS‐COF‐C electrodes. This antagonistic functionality of BS‐COF‐C electrodes assists the charge‐transfer rate, leading to fast charge separation in the developed ionic soft actuator under alternating current input signals. Furthermore, the hierarchical porosity, high surface area, and synergistic effect of co‐doping of the BS‐COF‐Cs play crucial roles in offering effective interaction of BS‐COF‐Cs with poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), leading to the generation of high electro‐chemo‐mechanical performance of the corresponding composite electrodes. Finally, the developed ionic soft actuator based on the BS‐COF‐C electrode exhibits large bending strain (0.62%), excellent durability (90% retention for 6 hours under operation), and 2.7 times higher bending displacement than PEDOT:PSS under extremely low harmonic input of 0.5 V. This study reveals that the antagonistic functionality of heteroatom co‐doped electrodes plays a crucial role in accelerating the actuation performance of ionic artificial muscles.