Some new binary codes correcting asymmetric/unidirectional errors

The authors give a tabulation of the numbers of codewords in new binary codes with the asymmetric/unidirectional error-correcting capabilities of 3, 4, 5, 6 for lengths 14, 15, . . . , 23. The new codes have greater sizes than the known codes for 14⩽n⩽23 and 3⩽t⩽6     

Characteristic Instabilities in HfAlO Metal–Insulator–Metal Capacitors Under Constant-Voltage Stress

Time-dependent characteristic changes of metal-insulator-metal (MIM) capacitors with HfAlO dielectric prepared by atomic-layer deposition under constant-voltage stress (CVS) were studied. It was found that relative dielectric constant , dielectric loss , temperature coefficient of capacitance , and frequency coefficient of capacitance gradually increase during CVS testing, whereas the voltage dependence of capacitance weakens. It was also found that changes in -value, , and during CVS testing linearly depend on changes in . These three linear relationships are basically explained by a dielectric-response model proposed for a ldquoflat-lossrdquo dielectric. That is, the increases in -value, , and are attributed to the dielectric-loss increase caused by voltage stress. Stress-time dependence of the dielectric-loss increase is expressed very well by a power function. That is, the power exponent obtained by a curve fitting linearly increases with stress voltage and decreases with increasing aluminum concentration in the HfAlO dielectric. This result indicates that aluminum addition into the HfAlO dielectric can improve the characteristic stabilities of a MIM capacitor under voltage stress.     

Analysis of the spectrum behavior below the threshold in DFB lasers

The spectrum behavior below the threshold in DFB lasers has been investigated. Analysis shows that the emission spectrum has peaks predicted by the threshold theory and proper valleys between large peaks. The results of our analysis should aid in the evaluation of DFB structure parameters.     

Recovery of neutron-induced damage of SiC by thermal annealing up to 1400 °C

Recovery of the specimen length of neutron-irradiated SiC was observed using a precision dilatometer. The specimens were heated isothermally and isochronally. The accuracy of length measurement at high temperature using the dilatometer was compared with that of length measurement at room temperature using a micrometer. It was clarified that the dilatometer method showed high accuracy and stability. The dilatometer method was applied to observe length recovery by isothermal annealing at 1200 °C of the neutron-irradiated SiC, and at least two recovery rates were clarified.     

Measurement of thermal expansivity of low-expansion glasses by interferometric methods: Results of an interlaboratory comparison

An interlaboratory testing program on the measurement of the linear thermal expansion coefficient of low-expansion glasses has been carried out. Three different types of interferometric dilatometers, each located at three different organizations, and two kinds of low-expansion glass materials were selected for the experiments. As a result of the comparison, a reasonable agreement among the different measuring instruments was confirmed, and it was determined that the thermal expansion coefficient for low-expansion glasses can be measured with an accuracy of ±4×10^–8 K^–1 by using commercially available interferometric dilatometers.     

Homogeneous and Disordered Assembly of Densely Packed Nanocrystals

A homogeneous and disordered assembly of densely packed nanocrystals is generated without the assistance of organic molecules, from an aqueous solution at room temperature. The densely packed nanocrystals of tin dioxide (SnO₂) and titanium dioxide (TiO₂), 2–3 nm in size, form glassy macroscopic transparent objects of 2–10 mm. The monodisperse nanocrystals, which have a surface hydrated layer and are synthesized in aqueous solution, are densely packed in an homogeneous and disordered assembly through the evaporation of water as the dispersion medium. The formation of transparent bulk objects on the macroscopic scale originates from the homogeneous and disordered nature of the densely packed nanocrystals. The resultant homogeneous architectures are distinguishable from the typical inhomogeneous and disordered aggregates of nanoparticles observed after evaporation of the dispersion medium. Among superstructures based on nanocrystals, such as superlattices and mesocrystals, the resultant homogeneous and disordered assembly can be regarded as a new class of solid‐state material.     

Multicopy suppressors of the sly1 temperature-sensitive mutation in the ER-Golgi vesicular transport in Saccharomyces cerevisiae

Saccharomyces cerevisiae Sly1 protein is a member of the Sec1/Munc18-family proteins, which are essential for vesicular trafficking, but their exact biological roles are yet to be determined. A temperature-sensitive sly1 mutant arrests the vesicular transport from the ER to Golgi compartments at 37 degrees C. We screened for multicopy suppressor genes that restore the colony formation of the sly1(ts) mutant to discover functionally interacting components. The suppressor genes obtained were classified as: (1) those that encode a multifunctional suppressor, SSD1; (2) heat shock proteins, SSB1 and SSB2; (3) cell surface proteins, WSC1, WSC2 and MID2; (4) ER-Golgi transport proteins, USO1 and BET1; and (5) an as-yet-uncharacterized protein, HSD1 (high-copy suppressor of SLY1 defect 1). By epitope tagging of the gene product, we found that Hsd1 protein is an ER-resident membrane protein. Its overproduction induced enlargement of ER-like membrane structures.     

Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure bridgman technique

The electron drift mobility of undoped Cd_0.9Zn_0.1Te grown by high-pressure Bridgman method is measured by a time-of-flight technique. The sample shows a room temperature mobility and mobility lifetime product of 950 cm²/Vs and 1.6 × 10⁻⁴cm²/V, respectively. The mobility increases monotonically with decreasing temperature to 3000 cm²/Vs at 100 K. The dominant scattering mechanism for the electron transport is discussed by comparing with the theoretical mobility obtained by iterative solution of the Boltzmann equation.