Identification of Sperm-Binding Sites in the N-Terminal Domain of Bovine Egg Coat Glycoprotein ZP4

The species-selective interaction between sperm and egg at the beginning of mammalian fertilisation is partly mediated by a transparent envelope called the zona pellucida (ZP). The ZP is composed of three or four glycoproteins (ZP1–ZP4). The functions of the three proteins present in mice (ZP1–ZP3) have been extensively studied. However, the biological role of ZP4, which was found in all other mammals studied so far, has remained largely unknown. Previously, by developing a solid support assay system, we showed that ZP4 exhibits sperm-binding activity in bovines and the N-terminal domain of bovine ZP4 (bZP4 ZP-N1 domain) is a sperm-binding region. Here, we show that bovine sperm bind to the bZP4 ZP-N1 domain in a species-selective manner and that N-glycosylation is not required for sperm-binding activity. Moreover, we identified three sites involved in sperm binding (site I: from Gln-41 to Pro-46, site II: from Leu-65 to Ser-68 and site III: from Thr-108 to Ile-123) in the bZP4 ZP-N1 domain using chimeric bovine/porcine and bovine/human ZP4 recombinant proteins. These results provide in vitro experimental evidence for the role of the bZP4 ZP-N1 domain in mediating sperm binding to the ZP.     

Microstructure and superplasticity of an Al-Zn-Mg-Cu alloy

A new superplastic process was introduced in this paper. This new process is very simple and easy to use in practical production. Continuous recrystallization occurred during superplastic deformation and very fine grained microstructure formed, which provides excellent superplasticity for the Al-Zn-Mg-Cu alloy 7075.     

Response evaluation of a compact and highly efficient neutron diffractometer for compact accelerator neutron sources

We fabricated the spheroid neutron diffractometer with 79 neutron detector rings using the transparent rubber sheet type Eu:LiCaAlF₆ scintillators and wavelength-shifting fibers.We confirmed that the fabricated detector shows a clear neutron peak and can discriminate neutron and gamma-ray events in a signal pulse spectrum.We additionally checked that the fabricated diffractometer can detect a neutron diffraction peak of ferrite powder at Kyoto University Accelerator-driven Neutron Source.Consequently,it can be expected that crystal structural analysis will be possible even by small accelerator neutron sources.     

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy

We investigate the reduction in the efficiency of band-edge radiative recombination in InN by two carrier recombination processes via mid-gap states: radiative recombination via deep states and nonradiative recombination (NR). Because of the small band-gap energy value and the existence of the surface electron accumulation layer, the carrier transition processes via deep states cannot be observed easily. We address this problem by using mid-infrared photoluminescence (PL) measurements, and observe an emission peak around 0.32 eV at room temperature, which we interpret as being caused by transition processes via deep-defect states. Since this emission is weaker than the band-edge emission, the dominant carrier recombination process is concluded to be NR by phonon emission. The NR rate is known to be determined by the NR defect density, carrier transport processes to NR defects, and thermal activation processes of carriers. Carrier transport and capture processes by NR defects are investigated using p-type samples for various carrier mobility values. It is concluded that the NR rate is highly affected by the carrier transport, and that the candidates for the NR defect species are point defects and complexes of acceptor nature. We have also observed the correlation between the thermal conductivity and the band-edge PL intensity. As a result, we have found that the NR rate is highly affected by the carrier transport and thermal activation processes in InN.     

A Burst-Mode 3R Receiver for 10-Gbit/s PON Systems With High Sensitivity, Wide Dynamic Range, and Fast Response

The burst-mode 3R receiver using monolithic ICs for 10-Gbit/s-class optical access networks is reported. In a point-to-multipoint access system like a passive optical network (PON), the receiver at the optical line terminal (OLT) must be able to handle burst-mode optical packets with significantly different powers and phases. An OLT receiver with high sensitivity with instantaneous response to burst inputs is desired for widening the accommodation area and for high efficiency in PON uplinks. Currently, the diffusion of high-speed Internet connection services represented by fiber to the home services at 1.25 Gbit/s is remarkable and the standardization of the next-generation system operating at 10 Gbit/s has started in IEEE. We first discuss the issues in the implementation of 10-Gbit/s-class PON systems, focusing on securing the accommodation area and the quality of the service comparable with those of the deployed system. Against that background, we propose target specifications for sensitivity, a dynamic range and response speed of the 10-Gbit/s-class burst-mode receiver so as to secure the power budget and the upstream efficiency comparable with those of the already-installed systems. Our burst-mode 3R receiver was designed to meet the above requirements and developed using monolithic ICs of transimpedance amplifier, limiting amplifier, and clock and data recovery circuit fabricated by using SiGe BiCMOS technologies along with a p-i-n photodiode. High sensitivity of , a wide dynamic range of over 16.5 dB, and quick response time of 75 ns were confirmed for burst inputs with extremely different powers.     

Highly Manufacturable and Reliable HfSiON N-FET With Poly-Si/a-Si Stacked Gate for LSTP Applications

We have proposed a novel poly-Si/a-Si/HfSiON transistor to enhance reliabilities without performance degradation for a 65-nm-node low standby power (LSTP) application. By insertion of a thin amorphous-Si layer between the Poly-Si gate electrode and HfSiON, both phosphorus penetration from gate electrode and a reaction at gate electrode/HfSiON interface are successfully suppressed, so that positive bias temperature instability, one of the biggest issues for high-k gate dielectric, is drastically improved by two orders of magnitude. By carefully optimizing the gate stack structure of HfSiON, the HfSiON device can satisfy both lower gate leakage and gate-induced drain leakage at the same time. As a result, an excellent I_on- I_standby (= I_g + l_off) characteristic can be achieved, compared to the conventional SiON device. The a-Si insertion technique can realize the combination between the high-k gate dielectric and Poly-Si for future LSTP applications.     

Evaluation of Spaceborne SiC Mirror Materials Using Samples Cut from the Periphery of a Mirror Body

The Japan Aerospace Exploration Agency has studied large-scale, lightweight mirrors constructed of SiC-based materials as a key technology for future earth observations and astronomical missions. One of the most important technical issues for large-scale ceramic components is their quality stability (viz., differences in material properties depending on the part and the processing), which might influence the structural and/or thermal reliability through unforeseen deformation and breakage. In this study, the authors used a simple, low-cost method for evaluating the properties of SiC mirror materials. Using mechanical testing, thermodilatometry, and microstructural analysis on samples cut from the periphery of a prototype 800-mm-diameter mirror body, the overall quality of the mirror body material was determined.     

A magnetic MEMS actuator using a permanent magnet and magnetic fluid enclosed in a cavity sandwiched by polymer diaphragms

A magnetic microelectromechanical systems (MEMS) actuator using a small permanent neodymium-magnet surrounded by magnetic fluid (MF) was developed and characterized. The magnet is enclosed in a cavity sandwiched by two identical thin PET-sheet diaphragms and is able to move smoothly due to the MF. The diaphragms deflect when an external magnetic force is applied to the magnet. This structure was adopted to prevent the diaphragms from being stiffened by attaching or fabricating a magnetic layer on the diaphragm surface and to secure the necessary volume of magnetic material. The magnets are 2–4 mm in diameter and the cavity is 5 mm in diameter and 1 mm in depth. The diaphragms are 20 μm in thickness. Experiments showed the displacement amplitude generated at the diaphragm center was in the range of 10–50 μm for attractive and repulsive magnetic force when magnetic flux density of 4–30 mT was applied. The response was within about 1 s. The deflection profile of the diaphragms can also be varied by changing the magnet position.     

Subcriticality measurement using time-domain decomposition-based integral method for simultaneous reactivity and source changes

ABSTRACT

To estimate the subcriticality in dollar units for an arbitrary state-change, the time-domain decomposition-based integral method (TDDI) is proposed using the point kinetics theory based on the fundamental mode approximation. In a general transient subcritical system, reactivity, neutron source intensity, and point kinetics parameters can vary simultaneously. Furthermore, the state-change may not necessarily be a stepwise change. For such a transient, the TDDI method can estimate the subcriticality after the transient using only the time variation of the neutron count rate. Therefore, the proposed method is useful to approximately estimate the subcriticality in a system where a detailed core configuration is unknown. To investigate the applicability of the TDDI method, transient experiments with simultaneous reactivity and source changes or to two successive safety rods dropping were performed at the Kindai University Training and Research Reactor (UTR-KINKI). By comparing with reference values using excess reactivity and control rod worth, it was validated that the subcriticality values obtained by the TDDI method better agree with the reference values than the previous integral method.