High-temperature oxidation of pure titanium in CO2 and Ar-10%CO2 atmospheres

The oxidation behavior of pure titanium has been investigated in the temperature range of 1000 K to 1300 K in CO₂ or Ar-10%CO₂. Optical microscopy, electron probe microanalyses, and X-ray measurements on the oxide scales formed during oxidation indicate that their structures are nearly independent of temperature and the corrosion atmosphere. The scales consisted of two layers, an external one and an internal one, having a rutile (TiO₂) structure. The parabolic rate law was confirmed for growth of the external scale and the permeation depth of oxygen in titanium with apparent activation energies of 266 and 226 kJ/mol, respectively. The rate-determining diffusion species in the oxidation processes are discussed.     

The fluorescence behavior from SAM of dendron with rhodamine B as a center

We studied energy transfer between rhodamine B molecules centered in each corn-shaped dendrons that forms self-assembled monolayer (SAM) film on an Au substrate. A SAM film using dendron moiety as a spacer can change the distance between rhodamines depending on the size, so that the energy transfer from an initially photo-excited rhodamine to its surrounding molecules can be controlled. The absorption spectrum of a SAM film for each generation of dendron was measured to ascertain a linear correlation between the generation and the distance. Picosecond time-resolved fluorescence spectra showed clear differences in the fluorescence decay dynamics between third-generation (G3) and fourth-generation (G4) dendron SAM films. In addition, we found that “dry” or “wet” dendron SAM considerably influenced fluorescence behavior. As a result, the use of “wet” G4 SAM is suitable in preserving photo-excitation energy. This is because it gave almost equal dynamics to G4 dendron in the dilute solution and prevented deactivation by energy dissipation.     

Functional and Structural Insights into Human PPARα/δ/γ Subtype Selectivity of Bezafibrate,Fenofibric Acid,and Pemafibrate

Among the agonists against three peroxisome proliferator-activated receptor (PPAR) subtypes, those against PPARα (fibrates) and PPARγ (glitazones) are currently used to treat dyslipidemia and type 2 diabetes, respectively, whereas PPARδ agonists are expected to be the next-generation metabolic disease drug. In addition, some dual/pan PPAR agonists are currently being investigated via clinical trials as one of the first curative drugs against nonalcoholic fatty liver disease (NAFLD). Because PPARα/δ/γ share considerable amino acid identity and three-dimensional structures, especially in ligand-binding domains (LBDs), clinically approved fibrates, such as bezafibrate, fenofibric acid, and pemafibrate, could also act on PPARδ/γ when used as anti-NAFLD drugs. Therefore, this study examined their PPARα/δ/γ selectivity using three independent assays—a dual luciferase-based GAL4 transactivation assay for COS-7 cells, time-resolved fluorescence resonance energy transfer-based coactivator recruitment assay, and circular dichroism spectroscopy-based thermostability assay. Although the efficacy and efficiency highly varied between agonists, assay types, and PPAR subtypes, the three fibrates, except fenofibric acid that did not affect PPARδ-mediated transactivation and coactivator recruitment, activated all PPAR subtypes in those assays. Furthermore, we aimed to obtain cocrystal structures of PPARδ/γ-LBD and the three fibrates via X-ray diffraction and versatile crystallization methods, which we recently used to obtain 34 structures of PPARα-LBD cocrystallized with 17 ligands, including the fibrates. We herein reveal five novel high-resolution structures of PPARδ/γ–bezafibrate, PPARγ–fenofibric acid, and PPARδ/γ–pemafibrate, thereby providing the molecular basis for their application beyond dyslipidemia treatment.     

Pixel design of pulsed CMOS image sensor for retinal prosthesis with digital photosensitivity control

A newly designed pulse frequency modulation photosensor for use in retinal prosthesis is proposed and demonstrated. The pixel converts the intensity of incident light into biphasic current pulses at frequencies suitable for the electrical stimulation of retinal neurons. Experimental results showed that the device was sensitive over a dynamic range of input light of about 120 dB, and that photosensitivity could be varied from 0 dB to around -40 dB.     

Hierarchical sub-band coding of super high definition image with adaptive block-size multistage VQ

A hierarchical image coding algorithm based on sub-band coding and adaptive block-size multistage vector quantization (VQ) is proposed, and its coding performance is examined for super high definition (SHD) image. First, the concept on SHD image is briefly described. Next, the signal power spectrum is evaluated, and the sub-band analysis pattern is determined from its characteristics. Several quadrature mirror filters are examined from the viewpoints of reconstruction accuracy, coding gain, and low-pass signal quality. Then an optimum filter is selected for the sub-band analysis. The two-stage VQ using the adaptive bit allocation is also introduced to control quantization accuracy and to achieve high-quality image reproduction. Coding performance and hierarchical image reconstruction are demonstrated using SNR and some photographs.     

Fabrication and current-drive of SiGe/Si 'Micro-origami' epitaxial MEMS device on SOI substrate

A micromirror structure with SiGe/Si heteroepitaxial layer on a silicon-on-insulator (SOI) substrate using a 'Micro-origami' technique has been successfully fabricated. The micromirror is supported by two curved hinge structures. The device is driven by application of a current, and net angular displacements larger than 10/spl deg/ (static) and 30/spl deg/ (in resonance) were obtained. These values are comparable with or even larger than the reported values for other MEMS optical switches or beam scanning devices. The experimental results suggest that the movement is evoked by a thermal effect. The Micro-origami device has advantages of low operation voltage smaller than 2 V, and structural compatibility with the Si or SiGe LSIs.     

Short channel characteristics of quasi-single-drain MOSFETs

It is clearly demonstrated that source/drain (S/D) elevation is remarkably effective in suppressing the short channel effect against the shrinkage of gate sidewall spacers in MOSFETs. Even if the gate sidewall width is reduced to as very thin as 15 nm, the short channel effect is effectively suppressed by means of the highly elevated S/D regions (80 nm in the present case), though the characteristics of conventional MOSFETs are drastically degraded. This result is explained in terms of the fact that the serious influence due to the deep S/D implantation is suppressed by the formation of a quasi-single-drain configuration. Furthermore, the parasitic S/D resistance decrease, which will bring about drivability enhancement, was observed for reduction in the sidewall width. These favorable experimental results may indicate the definite necessity of elevated S/D engineering for future ultrashort MOSFETs     

Junction capacitance reduction due to self-aligned pocketimplantation in elevated source/drain NMOSFETs

A new advantage of an elevated source/drain (S/D) configuration to improve MOSFET characteristics is presented. By adopting pocket implantation into an elevated S/D structure which was formed by Si selective epitaxial growth and gate sidewall removal, we demonstrate that the parasitic junction capacitance as well as the junction leakage was significantly reduced for an NMOSFET while maintaining its good short channel characteristics. These successful results are attributed to the modification of the boron impurity profile in the deep S/D regions. The capacitance reduction rate, furthermore, was more remarkable as the pocket dose was further increased. This means that the present self-aligned pocket implantation is very promising for future MOSFETs with a very short gate length, where high pocket dosage will be required to suppress the short channel effect     

a-SiC:H/SiO2 Laminated Polarization Splitter for the Wavelength Region Longer Than 1.3 μm Prepared by Plasma-Enhanced Chemical Vapor Deposition

A laminated polarization splitter for the wavelength region longer than 1.3 μm is fabricated for the first time. It is composed of a-SiC:H/SiO₂ alternative multilayers prepared by plasma-enhanced chemical vapor deposition. Splitting behavior is also verified experimentally. It has low absorption loss even for the wavelength region around λ = 1.3 μm because the band-gap energy of a-Sic is larger than that of a-Si. The measured splitting angle is 13.8°, which is 2.4 times larger than the 5.7° splitting angle of rutile. The absorption loss of the multilayer is reduced to 1 × 10^-3 dB/μm at λ = 1.3 μm. The magnitude of the residual stress is 9.45 × 10⁸ dyn/cm², which is about one-third of that prepared by the rf bias sputtering equipment which is used for another project of our group. The deposition rate of SiO₂, is increased to 135 nm/min, which is 27 times larger than that prepared by the sputtering equipment.