Methodologies for characterizing traffic in wide area networks: Analysis and benchmarking

Since computer networks play an important role in distributed computing environments, an application's performance depends heavily on the quality of service provided by the communication networks. To ensure a high performance, the characteristics of wide area networks, WANs, must be well understood. This paper presents methodologies to characterize WAN traffic based on real measurements from Bellcore's backbone network that connects remote sites using dedicated T1 links. This paper also suggests some workload models that can be used for wide area network sizing and performance evaluation studies. It is found that the inter-site traffic pattern depends on the time of the day and the day of the week. Furthermore, the traffic between two sites is found to be reasonably symmetric, except for those sites designated as back-up sites. The coefficient of variation is used as a measure for the traffic burstiness and it is found to be 1·5 degree during working hours. The methods presented here are easy to use and cost-effective.     

Link budget analysis for multistandard receiver architectures

As devices shrink, creating integrated circuits (ICs) that work with the required accuracy becomes more difficult due to issues related to device physics. Receivers are part of an area referred to as "mixed-signal design," meaning that both analog and digital circuitry will be on the same IC. This too presents many challenging issues, as the analog circuitry is highly sensitive to disruptions caused by the noisy digital circuitry. Therefore, accurate modeling and simulation is crucial in the design of wireless receivers to ensure the best possible operation of the fabricated IC. Through simulation and modeling a designer can determine if receiver architecture will meet the required specifications and pinpoint the possible problems before valuable time is spent developing the actual circuit. This article will present design issues for multistandard wireless receivers to give the reader an understanding of the challenges involved in link-budget analysis. TITAN (Toolbox for Integrated Transceiver Analysis), a link-budget analysis tool developed at The Ohio State University Analog VLSI Laboratory, will be presented as an example of a tool for receiver simulation. To determine design performance, various requirements must be translated to model parameters. Among the requirements for receivers are noise floor (NF), second- and third-order distortion (IP2 and IP3, respectively), reciprocal mixing, and phase noise. TITAN offers a graphical interface and encapsulated models to the designer, eliminating the possibility of formula corruption. The interface provides a more intuitive and sophisticated way of setting up the simulation and provides the designer with more readable results. Additionally, a blocking profile component allows the architecture to be tested across multiple standards.     

Chemical composition and nutritional quality of tehineh (sesame butter)

The chemical composition and nutritional quality of tehineh, a paste of dehulled roasted sesame seeds, from Saudi Arabia and other countries, were studied. Results showed 24.7% protein, 58.9% fat, 2.3% fiber, 3.0% ash and <1.0% moisture. The tehineh contained relatively high amounts (mg/100 g) of P (692), Mg (362), Fe (7.19), Cu (1.96), Mn (1.46) and Zn (7.82) and low amounts of Ca (61) and Se (0.05). Gas-liquid chromatography (GLC) analysis of the oil revealed percentages of 42.4 for oleic, 39.7 for linoleic, 9.8 for palmitic and 6.4 for stearic acid. Lysine was the only limiting amino acid with a chemical score of 64, while the sulphur-containing amino acids (methionine + cystine) and tryptophan were present in amounts exceeding the requirement of the FAO/WHO (1973) reference protein. The in vitro protein digestibility (IVPD) value of 83.3% and the calculated protein efficiency ratio (C-PER), 2.14, were slightly higher than those of sesame seeds and both values were lower than the IVPD and C-PER of 90.0% and 2.50, respectively, for ANRC casein.     

Statistical modeling of device mismatch for analog MOS integratedcircuits

A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described. Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device separation distance and device area. Using a Monte Carlo approach to parameter sampling, circuit output means and standard deviations can be simulated. Incorporated in a CAD environment, these modeling algorithms will provide the analog circuit designer with a method to determine the effect of both circuit layout and device sizing on circuit output variance. Test chips have been fabricated from two different fabrication processes to extract statistical information required by the model. Experimental and simulation results for two analog subcircuits are compared to verify the statistical modeling algorithms     

Introduction

The Journal of Supercomputing -     

CMOS low-power bandpass IF filter for Bluetooth

Design of a CMOS 18th-order IF (intermediate frequency) bandpass filter for integrated low-IF Bluetooth receivers is presented. The centre frequency and bandwidth of the filter are 3 and 1 MHz, respectively. The proposed filter is based on unity gain fully differential voltage buffers and provides efficient, low power and a small area design solution. The filter, including its automatic tuning circuit, occupies an area of 0.6 mm² in a standard 0.5 mum-CMOS chip. Experimental results show that the filter satisfies the selectivity and dynamic range requirements of Bluetooth while operating from a total supply current of 0.9 mA     

High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors

The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm²/V-s and 2.5×10¹² (1.5×10¹² ) cm^-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors