Dual‐plate OLED display (DOD) based on amorphous‐silicon (a‐Si) TFT backplane

Abstract— An improved AMOLED with an a‐Si TFT backplane based on a unique structure is reported. The new structure is refered to as a dual‐plate OLED display (DOD). While a top‐emission OLED array is directly fabricated on a TFT backplane, the DOD consists of an upper OLED substrate and a lower TFT substrate, which are independently fabricated. Because the OLED substrate, which is fabricated through the process flow of bottom emission, is attached to the TFT substrate, the light is emitted in the opposite direction to the TFT backplane. The DOD enables the design of large‐sized TFTs and a complicated pixel circuit. It can also not only achieve higher uniformity in luminance in large‐sized displays due to the low electrical resistance of the common electrode, but also wider viewing angles.     

Electron beam lithography-assisted fabrication of Au nano-dot array as a substrate of a correlated AFM and confocal Raman spectroscopy

This paper documents a study of an Au nano-dot array that was fabricated by electron beam lithography on a glass wafer. The patterns that had features of 100nm dots in diameter with a 2-mum pitch comprised a total area of 200x200mum(2). The dot-shaped Cr underlayer was open to the air after developing Poly(methyl methacrylate) (PMMA). When dipped into the Cr etchant, the exposed Cr layer was eliminated from the glass wafer in a short period of time. In order to ultimately fabricate the Ti/Au dot arrays, Ti and Au were deposited onto the arrays with a thickness of 2 and 40nm, respectively. The lift-off procedure was carried out in the Cr etchant using sonication in order to completely remove the residual Cr/PMMA layer. The fabricated Au nano-dot array was then immersed in an Ag enhancing solution and then into an ethanol solution containing (N-(6-(Biotinamido)hexyl)-3'-(2'-pyridyldithio)-propionamide (Biotin-HPDP). The substrate was analyzed using a correlated atomic force microscopy (AFM) and confocal Raman spectroscopy. Through this procedure, position-dependent surface-enhanced Raman spectroscopy (SERS) signals could be obtained.     

Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl₅ as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta₂O₅ film were investigated for Al/Ta₂O₅/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta₂O₅ deposited by PECVD was amorphous as-deposited. However, crystalline -Ta₂O₅ of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta₂O₅ were found to be 2.54 fF m^–2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.     

Engineering Transition Metal Layers for Long Lasting Anionic Redox in Layered Sodium Manganese Oxide

Oxygen-redox-based-layered cathode materials are of great importance in realizing high-energy-density sodium-ion batteries (SIBs) that can satisfy the demands of next-generation energy storage technologies. However, Mn-based-layered materials (P2-type Na-poor Na_y[A_xMn_1−x]O₂, where A = alkali ions) still suffer from poor reversibility during oxygen-redox reactions and low conductivity. In this work, the dual Li and Co replacement is investigated in P2-type-layered Na_xMnO₂. Experimentally and theoretically, it is demonstrated that the efficacy of the dual Li and Co replacement in Na_0.6[Li_0.15Co_0.15Mn_0.7]O₂ is that it improves the structural and cycling stability despite the reversible Li migration from the transition metal layer during de-/sodiation. Operando X-ray diffraction and ex situ neutron diffraction analysis prove that the material maintains a P2-type structure during the entire range of Na⁺ extraction and insertion with a small volume change of ≈4.3%. In Na_0.6[Li_0.15Co_0.15Mn_0.7]O₂, the reversible electrochemical activity of Co³⁺/Co⁴⁺, Mn³⁺/Mn⁴⁺, and O^2-/(O₂)^n- redox is identified as a reliable mechanism for the remarkable stable electrochemical performance. From a broader perspective, this study highlights a possible design roadmap for developing cathode materials with optimized cationic and anionic activities and excellent structural stabilities for SIBs.     

Spontaneously Embedded Scattering Structures in a Flexible Substrate for Light Extraction

A flexible hazy substrate (FHS) with embedded air bubbles to increase light extraction efficiency of organic light‐emitting diodes (OLEDs) is reported. In order to embed the air bubbles in the flexible substrate, micropatterned substrates are fabricated by plasma treatment, and then coated with a planarization layer. During the planarization layer coating, air bubbles are trapped between the substrate and the planarization layer. The haze of the FHS can be controlled from 1.7% to 68.4% by changing the size of micropatterns by adjusting the plasma treatment time. The FHS shows average haze of 68.4%, average total transmittance of 90.3%, and extremely flat surface with average roughness (R _a) of 1.2 nm. Rigorous coupled‐wave analysis and finite‐difference time‐domain simulations are conducted to demonstrate that the air bubbles in the substrate can effectively extract photons that are trapped in the substrate. The FHS increases the power efficiency of OLEDs by 22% and further increases by 91% combined with an external extraction layer. Moreover, the FHS has excellent mechanical flexibility. No defect has been observed after 10 000 bending cycles at bending radius of 4 mm.     

A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics

High‐quality and large‐area molybdenum disulfide (MoS₂) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS₂ film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS₂ film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)₆) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS₂ film is readily achievable in 20 min. Large‐area MoS₂ field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm² V^?1 s^?1, which is the highest reported for bottom‐gated MoS₂‐FETs fabricated via photolithography with an on/off ratio of ≈10⁵ at room temperature.     

Synthesis of Co/SiO2 hybrid nanocatalyst via twisted Co3Si2O5(OH)4 nanosheets for high-temperature Fischer-Tropsch reaction

A cobalt-silica hybrid nanocatalyst bearing small cobalt particles of diameter ～5 nm was prepared through a hydrothermal reaction and hydrogen reduction.The resulting material showed very high CO conversion (＞82％) and high hydrocarbon productivity (～1.0 gHc·g-1cat,·h-11) with high activity (～8.5 x 10-5 molco·g-1Co·S-1) in the Fischer-Tropsch synthesis reaction.