Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices

The effects of the amount of RuO₂ added in the Ta film on the electrical properties of a Ta-RuO₂ diffusion barrier were investigated using n⁺⁺-poly-Si substrate at a temperature range of 650–800°C. For the Ta layer prepared without RuO₂ addition, Ta₂O₅ phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO₂ incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO₂ crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemially strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO₂ added. Since a kinetic barrier for nucleation in formation of the crystalline Ta₂O₅ phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO₂ phase from nanocrystalline RuO_x phase, the formation of the RuO₂ phase by reaction between the indiffused oxygen and the RuO_x nanocrystallites is kinetically more favorable than that of Ta₂O₅ phase.     

Current gain dependence on subcollector and etch-stop doping inInGaP/GaAs HBTs

The DC current gain dependence of InGaP/GaAs heterojunction bipolar transistors (HBTs) on subcollector and etch-stop doping is examined. Samples of InGaP/GaAs HBTs having various combinations of subcollector doping and etch-stop doping are grown, and large area 60 μm×60 (μ) HBTs are then fabricated for DC characterization. It is found that the DC current gain has a strong dependence on the doping concentration in the subcollector and the subcollector etch-stop. Maximum gain is achieved when the subcollector is doped at 6~7×10 ¹⁸ cm^-3 while the subcollector etch-stop is doped either above 6×10¹⁸ cm^-3 (current gain/sheet resistance ratio, β/R_b=0.435 at I_c=1 mA) or below 3.5×10¹⁷ cm^-3 (β/R_b=0.426~0.438 at I_c=1 mA). The data show that it is not necessary to heavily dope the subcollector etch-stop to reduce the conduction barrier and to obtain high current gain. The high current gain obtained with the low InGaP etch-stop doping concentration is attributed to the reduction of the effective energy barrier thickness due to band bending at the heterojunction between the InGaP etch-stop and the GaAs subcollector. These results show that the β/R_b of InGaP/GaAs HBTs can improve as much as 69% with the optimized doping concentration in subcollector and subcollector etch-stop     

Ag Nanowire Reinforced Highly Stretchable Conductive Fibers for Wearable Electronics

Stretchable conductive fibers have received significant attention due to their possibility of being utilized in wearable and foldable electronics. Here, highly stretchable conductive fiber composed of silver nanowires (AgNWs) and silver nanoparticles (AgNPs) embedded in a styrene–butadiene–styrene (SBS) elastomeric matrix is fabricated. An AgNW‐embedded SBS fiber is fabricated by a simple wet spinning method. Then, the AgNPs are formed on both the surface and inner region of the AgNW‐embedded fiber via repeated cycles of silver precursor absorption and reduction processes. The AgNW‐embedded conductive fiber exhibits superior initial electrical conductivity (σ₀ = 2450 S cm^?1) and elongation at break (900% strain) due to the high weight percentage of the conductive fillers and the use of a highly stretchable SBS elastomer matrix. During the stretching, the embedded AgNWs act as conducting bridges between AgNPs, resulting in the preservation of electrical conductivity under high strain (the rate of conductivity degradation, σ/σ₀ = 4.4% at 100% strain). The AgNW‐embedded conductive fibers show the strain‐sensing behavior with a broad range of applied tensile strain. The AgNW reinforced highly stretchable conductive fibers can be embedded into a smart glove for detecting sign language by integrating five composite fibers in the glove, which can successfully perceive human motions.     

A self-driven active clamp forward converter using the auxiliary winding of the power transformer

This study proposes a new self-driven active clamp forward converter eliminating the extra drive circuit for the active clamp switch. The converter used the auxiliary winding of the power transformer to drive the active clamp switch and a simple RC circuit to get the dead time between the two switches. The operation principle was presented and experimental results were used to verify theoretical predictions. A 100-W (5 V/20 A) prototype converter that only exhibited 1.5-turn winding number in the auxiliary winding was sufficient to drive the active clamp switch on the input of 50 V. Finally, the measured efficiency of the converter was presented and the maximum efficiency of 91% was obtained.     

Self‐Healing Reduced Graphene Oxide Films by Supersonic Kinetic Spraying

The industrial scale application of graphene and other functional materials in the field of electronics has been limited by inherent defects, and the lack of simple deposition methods. A simple spray deposition method is developed that uses a supersonic air jet for a commercially available reduced graphene oxide (r‐GO) suspension. The r‐GO flakes are used as received, which are pre‐annealed and pre‐hydrazine‐treated, and do not undergo any post‐treatment. A part of the considerable kinetic energy of the r‐GO flakes entrained by the supersonic jet is used in stretching the flakes upon impact with the substrate. The resulting “frozen elastic strains” heal the defects (topological defects, namely Stone‐Wales defect and C₂ vacancies) in the r‐GO flakes, which is reflected in the reduced ratio of the intensities of the D and G bands in the deposited film. The defects can also be regenerated by annealing.     

Template‐Based Reconstruction of Surface Mesh Animation from Point Cloud Animation

In this paper, we present a method for reconstructing a surface mesh animation sequence from point cloud animation data. We mainly focus on the articulated body of a subject — the motion of which can be roughly described by its internal skeletal structure. The point cloud data is assumed to be captured independently without any inter‐frame correspondence information. Using a template model that resembles the given subject, our basic idea for reconstructing the mesh animation is to deform the template model to fit to the point cloud (on a frame‐by‐frame basis) while maintaining inter‐frame coherence. We first estimate the skeletal motion from the point cloud data. After applying the skeletal motion to the template surface, we refine it to fit to the point cloud data. We demonstrate the viability of the method by applying it to reconstruct a fast dancing motion     

Experimental Demonstration of 1.25-Gb/s Radio-Over-Fiber Downlink Using SBS-Based Photonic Upconversion

We experimentally demonstrate a radio-over-fiber downlink system using a stimulated Brillouin scattering (SBS)-based photonic upconversion technique. The Brillouin selective amplification characteristic of SBS is incorporated to generate the 11-GHz band radio-frequency (RF) carrier. The dual-electrode Mach-Zehnder optical modulator, which is used to carry the broadband data in the optical carrier instead of the optical sideband, is adopted along with the SBS-based carrier generation setup. To vindicate the broadband capabilities of the proposed scheme, 1.25-Gb/s pseudorandom bit sequence data is carried in the optical carrier. Error-free operation of the 1.25-Gb/s downlink is achieved without critical power penalties after the 13-km fiber transmission.     

An analytical threshold-voltage model of trench-isolated MOSdevices with nonuniformly doped substrates

A simple closed-form expression of the threshold voltage is developed for trench-isolated MOS (TIMOS) devices with feature size down to the deep-submicrometer range. The analytical expression is the first developed to include the nonuniform doping effect of a narrow-gate-width device. The inverse narrow width effect can be predicted analytically from the proposed model. It was derived by modeling the gate sidewall capacitance to include the two-dimensional field-induced edge fringing effect and solving the Poisson equation to include the channel implant effect at different operating backgate biases. A two-dimensional simulation program was developed, and the simulated data were used for verification of the analytical model. Good agreements between the modeled and simulated data have been achieved for a wide range of gate widths and biases. The model is well suited for the design of the basic transistor cell in DRAM circuits using trench field oxide isolation structure     

Proton-exchange optical waveguides in Z-cut LiNbO/sub 3/ using toluic acid

Proton-exchanged planar waveguides were demonstrated in Z-cut LiNBO/sub 3/ using toluic acid as a new organic proton source. These waveguides exhibit a propagation loss of around 1 dB/cm, and a step refractive index profile with an index increase of 0.124 measured at 0.663 mu m. The diffusion rate was found to be lower than those obtained using the popular benzoic and phosphoric acids.<>