Lineage of non-cranial neural crest cell in the dental mesenchyme: using a lacZ reporter gene during early tooth development

The tooth is one of the ectodermal organs controlled by reciprocal interactions between the epithelium and the mesenchyme. Mesenchymal cells in the developing tooth, so-called dental mesenchymal cells, are derived from two different origins: the cranial neural crest (CNC) and the non-CNC. These CNC-derived cells migrate, proliferate and differentiate into odontoblasts, cementoblasts, fibroblasts, osteoblasts and chondroblasts. Tooth germs of wild-type mice were transplanted into the kidney of adult lacZ-transgenic mice. After 1 week of transplantation, a few lacZ-expressing cells and many red blood cells were found near or inside the blood vessels in the pulp of wild-type tooth germs. This result shows that circulating cells of the adult host could invade the dental pulp during tooth development, through the blood vessels, and be a part of dental pulp tissue. Therefore, it can be suggested that these circulating progenitor cells could be the origin of non-CNC-derived cells in tooth germ and their migration pathways would be the blood vessels invading the dental pulp during tooth development. If variations of this experiment were suitably adjusted, such as the embryonic stage of the tooth germ, duration of transplantation, etc., this transplantation experiment using adult lacZ-transgenic mice could be a good system to reveal the origin and migration pathway of cells in developing organs as well as in dental mesenchymal cells.     

Design and fabrication of a significantly shortened multimode interference coupler for polarization splitter application

We report that we have successfully designed and fabricated a significantly shortened multimode interference coupler for application in polarization splitter, using a phenomenon that we termed "quasi-state" (QS) imaging effect. First, we identified and analyzed the QS imaging effect, and, based on the QS analysis, designed and fabricated a novel multimode interference (MMI) device with its split length shortened to 1/5 of a normally designed MMI split length. The fabrication is simple and cost effective and the fabricated device shows outstanding characteristics in extinction ratio, signal homogeneity, excess loss, and tolerance in the length of the splitter.     

Virtual fine delay line using one-stage inverter delay

A virtual fine delay line (VFDL) using only two ring oscillators and counters can cover a wide frequency operation range clock without adding any additional delay line stage. The proposed ring oscillator can easily make a unit delay as a one-stage inverter. The VFDL achieves fine resolution of less than 60 ps and small circuit area with two clock cycles lock-in time.     

Interfacial reactions of Sn-Ag-Cu solders modified by minor Zn alloying addition

The near-ternary eutectic Sn-Ag-Cu alloys have been identified as leading Pb-free solder candidates to replace Pb-bearing solders in microelectronic applications. However, recent investigations on the processing behavior and solder joints reliability assessment have revealed several potential reliability risk factors associated with the alloy system. The formation of large Ag₃Sn plates in Sn-Ag-Cu joints, especially when solidified in a relatively slow cooling rate, is one issue of concern. The implications of large Ag₃Sn plates on solder joint performance and several methods to control them have been discussed in previous studies. The minor Zn addition was found to be effective in reducing the amount of undercooling required for tin solidification and thereby to suppress the formation of large Ag₃Sn plates. The Zn addition also caused the changes in the bulk microstructure as well as the interfacial reaction. In this paper, an in-depth characterization of the interfacial reaction of Zn-added Sn-Ag-Cu solders on Cu and Au/Ni(P) surface finishes is reported. The effects of a Zn addition on modification of the interfacial IMCs and their growth kinetics are also discussed.     

Growth of InGaN HBTs by MOCVD

The design and growth of GaN/InGaN heterojunction bipolar transistors (HBTs) by metalorganic chemical vapor deposition (MOCVD) are studied. Atomic-force microscopy (AFM) images of p⁺InGaN base layers (∼100 nm) deposited under various growth conditions indicate that the optimal growth temperature is limited to the range between 810 and 830°C due to a trade-off between surface roughness and indium incorporation. At these temperatures, the growth pressure must be kept above 300 Torr in order to keep surface pit density under control. An InGaN graded-composition emitter is adopted in order to reduce the number of V-shaped defects, which appear at the interface between GaN emitter and InGaN base and render an abrupt emitter-base heterojunction nearly impossible. However, the device performance is severely limited by the high p-type base contact resistance due to surface etching damage, which resulted from the emitter mesa etch.     

Computing the Average Symbol Error Probability of the MPSK System Having Quadrature Error

When quadrature error exists, the shape of the M‐ary phase shift keying (MPSK) signal constellation becomes skewed‐elliptic. Each MPSK symbol takes on a different symbol error probability (SEP) value. The analytical results presented thus far have been derived from studies which examined the SEP problem assuming that the SEP of each MPSK symbol is equally likely; therefore, those results should not be treated as offering a complete solution. In this letter, we present a new and more complete solution to the SEP problem of MPSK by relaxing the above assumption and finding the expressions for the average as well as individual SEP in the presence of quadrature error.     

High-performance 94-GHz single balanced mixer using 70-nm MHEMTs and surface micromachined technology

We reported 94-GHz, low conversion loss, and high isolation single balanced active gate mixer based on 70-nm gate length InGaAs/InAlAs metamorphic high-electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5/spl sim/3.5 dB and under -29 dB in the range of 92.95/spl sim/94.5 GHz, respectively. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, an extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency (f/sub t/) of 330 GHz, and a maximum oscillation frequency (f/sub max/) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.     

Inorganic Drug‐Delivery Nanovehicle Conjugated with Cancer‐Cell‐Specific Ligand

The surface of layered double hydroxide nanoparticles, a potential drug‐delivery nanovehicle, is modified with the cancer‐cell‐specific ligand, folic acid. The surface modification is successfully accomplished through step‐by‐step coupling reactions with aminopropyltriethoxysilane and 1‐ethyl‐3‐(3‐dimethyl aminopropyl)‐carbodiimide. In order to evaluate the cancer‐cell targeting effect of folic‐acid‐grafted layered double hydroxide utilizing fluorescence‐related assay, both layered double hydroxide with and without folic acid moiety are labeled with fluorescein 5′‐isothiocyanate. The uptake of layered double hydroxide and folic acid conjugated into KB and A549 cells is visualized using fluorescence microscopy and measured by flow cytometry. Both chemical and biological assay results demonstrate that the folic acid molecules are indeed conjugated to the surface of layered double hydroxide and thus the selectivity of nanovehicles to cancer cells overexpressing folate receptors increases. In this study, it is suggested that layered double hydroxide nanoparticles can be used as drug‐delivery carriers with a targeting function due to the chemical conjugation with specific ligand.     

Shared hardware,high throughput implementation of 2D 4 × 4 and 8 × 8 integer transform for H.264/AVC high-profile coders

Two-dimensional discrete cosine transforms are used in the core transformations in all profiles of the H.264/Advanced video coding (AVC) standard. In this paper, implementing the resource sharing of high throughput 4 × 4 and 8 × 8 forward and inverse integer transforms for high definition H.264 is presented. It is shown that the 4 × 4 forward/inverse transform can be obtained from 8 × 8 forward/inverse transform using selective data input and data arrangement at intermediate stages. Fast 8 × 8 forward and inverse transform is implemented using matrix decomposition and matrix operation such as Kronecker product and direct sum. The proposed implementation does not require any transpose memory and has a dual clocked pipeline structure. Compared with existing designs, the gate count is reduced by 27.7% in the proposed design. The maximum operating frequency of the proposed system is approx. 1.3 GHz, while the throughput is 7 G and 18.7 G pixels/s for 4 × 4 and 8 × 8 forward integer transforms, respectively. The proposed design can be used for real time H.264/AVC high definition processing owing to its high throughput and low hardware cost.     

Multiple feedback algorithm for RFID MAC protocols

This letter introduces a new tree-based anti-collision scheme using multiple feedbacks for uplink tag random access in a single-cell scenario. We examine MAC efficiency improvements that result from the proposed scheme in terms of uplink (UL) throughput for emerging radio frequency identification (RFID) networks, and compare it with the conventional tree based RFID MAC in ISO 18000-6 Type B standard.