Development of a simple microsystems membrane probe card

Presented here are details of the development of a novel membrane integrated circuit (IC) probe card structure based on microsystems technology. The device design allows probing of both solder bumps and pads. A self-limiting sensor was integrated to prolong device lifetime. Comparison with and discussion of the use of modelling is made. Possible enhancements to the probing structure are discussed to improve alignment and measurements. Also shown is data using our microsystems probe card to access a simple IC device. Our device has a contact resistance of less than 0.5 Ω for a force of 0.004 N. A method to implement our probing structure for commercial application and the potential developments which can be made to improve its ease of use are then discussed.     

Vacuum degassing of chromium-nickel-molybdenum steel at the Magnitogorsk Metallurgical Combine

The Magnitogorsk Metallurgical Combine has conducted a study of the effect of technological factors on the hydrogen content of chromium-nickel-molybdenum steel after vacuum degassing. It was established that the most important factor is the hydrogen content of the steel before the degassing operation. The study also determined the effects of the circulation coefficient, the duration of the degassing operation, and the vacuum used in the treatment. __________ Translated from Metallurg, No. 7, pp. 68–69, July, 2006.     

The Applied Mathematics and Computer Science Schism

Isolating applied mathematics from computer science harms the profession and those who depend on it.     

Improved homogenization of Ni in sintered steels through the use of Cr-containing prealloyed powders

The homogenization of Ni in powder metal (PM) steel compacts is usually difficult even after high-temperature sintering at 1250°C. An earlier study by the authors demonstrated that this problem can be alleviated through the addition of 0.5 wt pct Cr in the form of stainless steel powders. To further improve the microstructure and mechanical properties of Ni-containing PM steels and to understand the mechanisms, an attempt was made in this study using the Fe-3Cr-0.5Mo prealloyed powder as the base material. The results showed that the distribution of the Ni additives was significantly improved. As a result, the tensile strength of the Fe-3Cr-0.5Mo-4Ni-0.5C compact sintered at 1250°C reached 1323 MPa. The elongation was higher than 1 pct. These sinter-hardened properties, which were attained using a slow furnace cooling rate, were comparable to those of the sinter-hardened alloys reported in the literature using accelerated cooling and were equivalent to those of the best quenched-and-tempered alloys registered in the Metal Powder Industries Federation (MPIF) standards. These improvements were attributed to the positive effect of Cr addition on alloy homogenization due to the reduction of the repelling effect between Ni and C, as was demonstrated through the thermodynamic analysis using the Thermo-Calc program.     

A model for semiconductor quantum dot molecule based on the current spin density functional theory

Based on the current spin density functional theory, a theoretical model of three vertically aligned semiconductor quantum dots is proposed and numerically studied. This quantum dot molecule (QDM) model is treated with realistic hard-wall confinement potential and external magnetic field in three-dimensional setting. Using the effective-mass approximation with band nonparabolicity, the many-body Hamiltonian results in a cubic eigenvalue problem from a finite difference discretization. A self-consistent algorithm for solving the Schrödinger-Poisson system by using the Jacobi-Davidson method and GMRES is given to illustrate the Kohn-Sham orbitals and energies of six electrons in the molecule with some magnetic fields. It is shown that the six electrons residing in the central dot at zero magnetic field can be changed to such that each dot contains two electrons with some feasible magnetic field. The Förster-Dexter resonant energy transfer may therefore be generated by two individual QDMs. This may motivate a new paradigm of Fermionic qubits for quantum computing in solid-state systems.     

Interview mit Hans-Christian Boos zum Thema „Unternehmertum in der IT-Branche“

Ohne Zusammenfassung     

Comprehensive heat exchange model for a semiconductor laser diode

By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.     

Note on B-splines, wavelet scaling functions, and Gabor frames

Let g be a continuous, compactly supported function on such that the integer translates of g constitute a partition of unity. We show that the Gabor system (g,a,b), with window g and time-shift and frequency-shift parameters a,b>0 has no lower frame bound larger than 0 if b=2,3,... and a>0. In particular, (g,a,b) is not a Gabor frame if g is a continuous, compactly supported wavelet scaling function and if b=2,3,... and a>0. We give an example for our result for the case that g=B/sub 1/, the triangle function supported by [-1,1], by showing pictures of the canonical dual corresponding to (g,a,b) where ab=1/4 and b crosses the lines N=2,3,.     

Understanding silica-supported metal catalysts: Pd/silica as a case study

Supported metal catalysts, particularly noble metals supported on SiO₂, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO₂/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO₂ films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.