Analysis of EMG and acceleration signals for quantifying the effects of deep brain stimulation in Parkinson's disease

Deep brain stimulation (DBS) is effective in reducing motor symptoms in Parkinson's disease (PD). However, objective methods for quantifying its efficacy are lacking. We present a principal component (PC)-based tracking method for quantifying the effects of DBS in PD by using electromyography (EMG) and acceleration measurements. Ten parameters capturing PD characteristic signal features were initially extracted from isometric EMG and acceleration recordings. Using a PC approach, the original parameters were transformed into a smaller number of PCs. Finally, the effects of DBS were quantified by examining the PCs in a low-dimensional feature space. The EMG and acceleration data from 13 PD patients with DBS ON and OFF, and 13 healthy age-matched controls were used for analysis. Clinical evaluation of patients showed that their motor symptoms were effectively reduced with DBS. The analysis results showed that the signal characteristics of 12 patients were more similar to those of the healthy controls with DBS ON than with DBS OFF. These observations indicate that the PC-based tracking method can be used to objectively quantify the effects of DBS on the neuromuscular function of PD patients. Further studies are suggested to estimate the clinical sensitivity of the method to different types of PD.     

Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C–V technique

In this work, charge trapping in SiO₂/Al₂O₃ dielectric stacks is characterized by means of pulsed capacitance–voltage measurements. The proposed technique strongly reduces the measurement time and, as a consequence, the impact of charge trapping on the measurement results. Flat band voltage shift and fast current transient during short stress pulses are systematically monitored and the centroid and the amount of the trapped charge are extracted using a first-order model.     

A 90-nm logic technology featuring strained-silicon

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach.     

Detection of skin cancer by classification of Raman spectra

Skin lesion classification based on in vitro Raman spectroscopy is approached using a nonlinear neural network classifier. The classification framework is probabilistic and highly automated. The framework includes a feature extraction for Raman spectra and a fully adaptive and robust feedforward neural network classifier. Moreover, classification rules learned by the neural network may be extracted and evaluated for reproducibility, making it possible to explain the class assignment. The classification performance for the present data set, involving 222 cases and five lesion types, was 80.5%+/-5.3% correct classification of malignant melanoma, which is similar to that of trained dermatologists based on visual inspection. The skin cancer basal cell carcinoma has a classification rate of 95.8%+/-2.7%, which is excellent. The overall classification rate of skin lesions is 94.8%+/-3.0%. Spectral regions, which are important for network classification, are demonstrated to reproduce. Small distinctive bands in the spectrum, corresponding to specific lipids and proteins, are shown to hold the discriminating information which the network uses to diagnose skin lesions.     

On the operational and manufacturing tolerances of GaAs-AlAs MQWmodulators

We approach the question of optimization of surface-normal p-i(multiquantum-well, MQW)-n modulators from the viewpoint of investigating their tolerance to variations in wavelength and temperature and errors in manufacture. The reflection characteristics of two high-quality samples are carefully processed to eliminate Fabry-Perot fringes, and then their spectra at any bias are characterized with six phenomenological parameters which depend on λ₀, the zero-field exciton position. The two GaAs-AlAs samples have λ₀'s of 833.8 and 842.3 nm, and so cover a range useful for modulators designed to operate near 850 nm in the normally reflecting condition, i.e., reflection decreases with field. A linear interpolation of the parameters of these two samples is used to predict the behavior of MQW diodes with λ₀'s around this range, and so a fully comprehensive examination of normally reflecting MQW modulators is performed. The performance aspect that is examined is contrast ratio as a function of nonuniformities in the devices or operating conditions given a voltage swing of 3 V. There are two operational modes discussed. If the voltage offset of the bias is allowed to vary via a feedback circuit, a contrast of 2:1 may be maintained over an operating wavelength change (Δλ) of 17 nm with local variations of wavelength of ±1 nm, which corresponds to a temperature variation of 60°C while allowing for variations of laser driver wavelength of ±1 nm. If feedback Is not permitted, we determine that, given tolerances to manufacturing errors, a contrast of 1.5:1 may be maintained over a wavelength range of ~5 nm by either using stacked diode designs or extremely shallow quantum wells     

Reduction of the error floor of MSK by selection diversity

We examine the error floor of minimum shift keying (MSK) when the receiver uses selection diversity. Both received signal strength indication (RSSI)-driven diversity and bit error rate (BER)-driven diversity are analyzed. The considered channel is a two-delay Rayleigh-fading channel; detection is done by differential detectors with either fixed or adaptive determination of the sampling time. Analysis is based on the method of error regions, where the instantaneous impulse response is represented by phasors in the complex plane. We first compute the joint probability density function (pdf) of the phasors of the two diversity branches. Depending on the selection criterion, the error probability is then computed as an integral over certain functions of this pdf. In the limit of small delay spreads S, the integrals are evaluated analytically. For fixed sampling, the admissible delay spread for BER=10^-3 is increased by about a factor of three (as compared to the no-diversity case) for RSSI-driven diversity and a factor of four for BER-driven diversity. For adaptive sampling, RSSI-driven diversity gives little improvement in the admissible S for BER=10^-3 while BER-driven diversity increases it by some 50%. Results are confirmed by comparison with Monte Carlo simulations and measurements     

Effect of annealing temperature on 1.5 μm photoluminescence from Er-lmplanted 6H-SiC

The effect of post-implantation anneal on erbium-doped 6H-SiC has been investigated. 6H-SiC has been implanted with 330 keV Er⁺ at a dose of 1 × 1013 /cm2. Er depth profiles were obtained by secondary ion mass spectrometry (SIMS). The as-implanted Er-profile had a peak concentration of∼1.3 × 10¹⁸/cm³ at a depth of 770Å. The samples were annealed in Ar at temperatures from 1200 to 1900°C. The photoluminescence intensity integrated over the 1.5 to 1.6 μm region is essentially independent of annealing temperature from 1400 to 1900°C. Reduced, but still significant PL intensity, was measured from the sample annealed at 1200°C. The approximate diffusivity of Er in 6H SiC was calculated from the SIMS profiles, yielding values from 4.5 × 10⁻¹⁶ cm²/s at 1200°C to 5.5 × 10⁻¹⁵ cm²/s at 1900°C.     

Design rules for an integratable low-power amplifier/filter combination

In this paper design rules for a circuit topology in which there is an inseparable combination of an amplifier and a filter characteristic, are presented. By intentionally using the capacitance of an already present input sensor for the filtering, the total required integrated capacitance is much less than that in circuits, which have a separately designed amplifier and filter function. Consequently, it is possible to have the advantage of a better integratability. Moreover, less complexity in the design is achieved. The presented circuit shows a current-to-voltage conversion and an inherently controllable second-order low-pass filter characteristic. A discrete realization has been designed to test the circuit. This circuit operates down to a 1 V supply voltage and the transfer shows a 1.8 M currentto-voltage conversion with a bandwidth of 6 kHz. Measurement results of this circuit show that a 63 dB dynamic range can be achieved with a total required integrated capacitance of only 31 pF.     

New approaches for household energy conservation—In search of personal household energy budgets and energy reduction options

Large-scale energy reduction campaigns focusing on households generally have two shortcomings. First, an energy reduction campaign is either personalized but time intensive or time extensive but generalized. Second, because only the direct energy requirements are addressed, only 50% of the total household energy requirement is subject to reduction. The other 50%, the indirect energy requirement, is much more difficult to calculate and address and therefore not subject to reduction.

In this paper, we describe a web-based tool that has the potential to overcome both of these shortcomings. The tool addresses direct as well as indirect energy requirements. By means of a simple expert system participants obtain personalized reduction options and feedback on the energy reduced. The tool was tested in Groningen (the Netherlands) with a sample of 300 households, resulting in a direct energy reduction of about 8.5% compared to a control group. The reduction in indirect energy was not statistically significant.     

High‐Efficiency InP‐Based Photocathode for Hydrogen Production by Interface Energetics Design and Photon Management

The solar energy conversion efficiency of photoelectrochemical (PEC) devices is usually limited by poor interface energetics, limiting the onset potential, and light reflection losses. Here, a three‐pronged approach to obtain excellent performance of an InP‐based photoelectrode for water reduction is presented. First, a buried p–n⁺ junction is fabricated, which shifts the valence band edge favorably with respect to the hydrogen redox potential. Photoelectron spectroscopy substantiates that the shift of the surface photovoltage is mainly determined by the buried junction. Second, a periodic array of InP nanopillars is created at the surface of the photoelectrode to substantially reduce the optical reflection losses. This device displays an unprecedented photocathodic power‐saved efficiency of 15.8% for single junction water reduction. Third, a thin TiO₂ protection layer significantly increases the stability of the InP‐based photoelectrode. Careful design of the interface energetics based on surface photovoltage spectroscopy allows obtaining a PEC cell with stable record performance in water reduction.