Intensity dependent but temperature independent charge carrier generation in organic photodiodes and solar cells

Measurements of the transient photoresponse of organic photodiodes and solar cells show a strong saturation effect in the quantum efficiency at laser fluences above approximately 3.3 μJ/cm². By a comparison of the measured intensity, temperature and field dependence of the transient pulse responses with extended drift–diffusion simulations, the loss of charge carriers can be traced back to a quadratic loss channel in the charge carrier generation process. In contrast to the predictions of the commonly used Onsager–Braun charge carrier generation model, we demonstrate that the dissociation of bound electron–hole-pairs is temperature independent but slightly field dependent.     

Full CMOS continuous time filters for GSM applications

This paper describes full cmoscontinuous time filter design techniques which can meet the specifications commonly set for gsmapplications. First several cmosfilter design techniques are overviewed. The ota-ctechnique is discussed to some more detail. To overcome the main drawback of the lower total harmonic distortion in ota-ctechniques very linear operational transconductance amplifiers (ota)are required. Such an ota,together with the applied linearisation techniques is discussed. To fulfil high accuracy in cut- off frequencies of the filter an active tuning system is necessary. A new on- chip tuning system is presented. The paper concludes with a practical design example for the gsmsystem. Therein the different ota-ctechniques discussed are illustrated.     

A novel propagation modeling for microcellular communications inurban environments

A novel method for microcellular communications to predict propagation characteristics is presented in this paper. It takes into account multiple reflections among walls, ground, vehicles, as well as the transmission/reflection due to groups of trees. Although these are three-dimensional (3-D) problems, we can combine two-dimensional (2-D) ray tracing and simple 3-D geometric considerations to solve them in a very efficient way. We have investigated the propagation loss versus size, number, and locations of vehicles and groups of trees on a safe island. Our results show that the radio wave propagation exhibits severe fast fading, attenuation, and blockage due to reflection, transmission, and shadowing, respectively     

A Channel Borrowing Approach for Cluster-based Hierarchical Wireless Sensor Networks

Mobile Networks and Applications - In Wireless Sensor Networks (WSNs), energy-efficient routing is required to conserve the scarce resources of these networks. Various energy-efficient routing...     

Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C–V technique

In this work, charge trapping in SiO₂/Al₂O₃ dielectric stacks is characterized by means of pulsed capacitance–voltage measurements. The proposed technique strongly reduces the measurement time and, as a consequence, the impact of charge trapping on the measurement results. Flat band voltage shift and fast current transient during short stress pulses are systematically monitored and the centroid and the amount of the trapped charge are extracted using a first-order model.     

A 90-nm logic technology featuring strained-silicon

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach.     

Detection of skin cancer by classification of Raman spectra

Skin lesion classification based on in vitro Raman spectroscopy is approached using a nonlinear neural network classifier. The classification framework is probabilistic and highly automated. The framework includes a feature extraction for Raman spectra and a fully adaptive and robust feedforward neural network classifier. Moreover, classification rules learned by the neural network may be extracted and evaluated for reproducibility, making it possible to explain the class assignment. The classification performance for the present data set, involving 222 cases and five lesion types, was 80.5%+/-5.3% correct classification of malignant melanoma, which is similar to that of trained dermatologists based on visual inspection. The skin cancer basal cell carcinoma has a classification rate of 95.8%+/-2.7%, which is excellent. The overall classification rate of skin lesions is 94.8%+/-3.0%. Spectral regions, which are important for network classification, are demonstrated to reproduce. Small distinctive bands in the spectrum, corresponding to specific lipids and proteins, are shown to hold the discriminating information which the network uses to diagnose skin lesions.     

On the operational and manufacturing tolerances of GaAs-AlAs MQWmodulators

We approach the question of optimization of surface-normal p-i(multiquantum-well, MQW)-n modulators from the viewpoint of investigating their tolerance to variations in wavelength and temperature and errors in manufacture. The reflection characteristics of two high-quality samples are carefully processed to eliminate Fabry-Perot fringes, and then their spectra at any bias are characterized with six phenomenological parameters which depend on λ₀, the zero-field exciton position. The two GaAs-AlAs samples have λ₀'s of 833.8 and 842.3 nm, and so cover a range useful for modulators designed to operate near 850 nm in the normally reflecting condition, i.e., reflection decreases with field. A linear interpolation of the parameters of these two samples is used to predict the behavior of MQW diodes with λ₀'s around this range, and so a fully comprehensive examination of normally reflecting MQW modulators is performed. The performance aspect that is examined is contrast ratio as a function of nonuniformities in the devices or operating conditions given a voltage swing of 3 V. There are two operational modes discussed. If the voltage offset of the bias is allowed to vary via a feedback circuit, a contrast of 2:1 may be maintained over an operating wavelength change (Δλ) of 17 nm with local variations of wavelength of ±1 nm, which corresponds to a temperature variation of 60°C while allowing for variations of laser driver wavelength of ±1 nm. If feedback Is not permitted, we determine that, given tolerances to manufacturing errors, a contrast of 1.5:1 may be maintained over a wavelength range of ~5 nm by either using stacked diode designs or extremely shallow quantum wells     

Design rules for an integratable low-power amplifier/filter combination

In this paper design rules for a circuit topology in which there is an inseparable combination of an amplifier and a filter characteristic, are presented. By intentionally using the capacitance of an already present input sensor for the filtering, the total required integrated capacitance is much less than that in circuits, which have a separately designed amplifier and filter function. Consequently, it is possible to have the advantage of a better integratability. Moreover, less complexity in the design is achieved. The presented circuit shows a current-to-voltage conversion and an inherently controllable second-order low-pass filter characteristic. A discrete realization has been designed to test the circuit. This circuit operates down to a 1 V supply voltage and the transfer shows a 1.8 M currentto-voltage conversion with a bandwidth of 6 kHz. Measurement results of this circuit show that a 63 dB dynamic range can be achieved with a total required integrated capacitance of only 31 pF.