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991.
Recently there has been increased interest in the development of high-level architectural synthesis tools targeting power optimization. In this paper, we first present an overview of the various architecture synthesis tasks and analyze their influence on power consumption. A survey of previously proposed techniques is given, and areas of opportunity are identified. We next propose a new architecture synthesis technique for low-power implementation of real-time applications. The technique uses algorithm partitioning to preserve locality in the assignment of operations to hardware units. Preserving locality results in more compact layouts, reduced usage of long high-capacitance buses, and reduced power consumption in multiplexors and buffers. Experimental results show reductions in bus and multiplexor power of up to 80% and 60%, respectively, resulting in 10–25% reduction in total power. 相似文献
992.
MohammadReza Mousavi Michel Reniers Jan Friso Groote 《Information Processing Letters》2005,93(5):217-223
Considering operators defined using Structural Operational Semantics (SOS), commutativity axioms are intuitive properties that hold for many of them. Proving this intuition is usually a laborious task, requiring several pages of boring and standard proof. To save this effort, we propose a syntactic SOS format which guarantees commutativity for a set of composition operators. 相似文献
993.
Frans M.M. Snijkers Anita Buekenhoudt Jan J. Luyten Jos Cooymans Myrjam Mertens 《Scripta materialia》2004,51(12):1129-1134
Yttria doped Ba-hafnates were prepared by solid state route and the proton conductivity of pressed samples of yttria doped barium hafnate was determined with impedance spectroscopy. The results are compared with existing data for cerates and zirconates. It was found that Ba-hafnates show a level of proton conduction that is comparable to that of doped Ba-zirconates at low and slightly higher at high temperatures. This is in agreement with the prediction based on the ionic radius of the tetravalent atom in the perovskite. 相似文献
994.
A 90-nm logic technology featuring strained-silicon 总被引:10,自引:0,他引:10
Thompson S.E. Armstrong M. Auth C. Alavi M. Buehler M. Chau R. Cea S. Ghani T. Glass G. Hoffman T. Jan C.-H. Kenyon C. Klaus J. Kuhn K. Zhiyong Ma Mcintyre B. Mistry K. Murthy A. Obradovic B. Nagisetty R. Phi Nguyen Sivakumar S. Shaheed R. Shifren L. Tufts B. Tyagi S. Bohr M. El-Mansy Y. 《Electron Devices, IEEE Transactions on》2004,51(11):1790-1797
A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach. 相似文献
995.
Anand A. Kulkarni Herbert Herman Jon Almer Ulrich Lienert Dean Haeffner Jan Ilavsky Stacy Fang Paul Lawton 《Journal of the American Ceramic Society》2004,87(2):268-274
Demands for designing prime reliant, energy-efficient, and high-performance thermal barrier coatings (TBCs) in gas turbines have led to a growing interest toward comprehensive microstructural characterization. Here we investigate the novel use of high-energy X-rays for small-angle X-ray scattering (SAXS), together with wide-angle scattering and radiography, for the depth-resolved characterization of TBCs grown by electron beam physical vapor deposition (EB-PVD). The coating microstructure is found to consist of columns perpendicular to the substrate, extending through the thickness, with a [001] growth texture and significant intercolumnar porosity. In addition, overshadowing effects during deposition together with gas entrapment give rise to nanoscale intracolumnar porosity consisting of featherlike and globular pores. Radiography showed an increase in the total porosity, from 15% near the substrate to 25% near the coating surface, which is ascribed to an increase in the intercolumnar spacing at the top of the coating. By contrast, the small-angle scattering studies, which are sensitive to fine features, showed the pore internal surface area to be greatest near the substrate. 相似文献
996.
We will discuss some modifications of the interval Gauss algorithm, so that it becomes feasible in a more general setting, particularly for totally non-negative matrices. 相似文献
997.
998.
E. J. Barbero J. N. Reddy Jan Teply 《International journal for numerical methods in engineering》1990,29(1):1-14
Analytical solutions for displacements and stresses in composite laminates are developed using the laminate plate theory of Reddy. The theory accounts for a desired degree of approximation of the displacements through the laminate thickness, allowing for piecewise approximation of the inplane deformation through individual laminae. The solutions are compared with the 3-D elasticity solutions for the simply supported case and excellent agreement is found. Analytical solutions are also presented for other boundary conditions. The results indicate that the generalized shear deformation plate theory predicts accurate stress distributions in thick composite laminates. 相似文献
999.
The oxidation of 2-methylnaphthalene in the solution of lithium acetate in glacial acetic acid has been investigated. It has been found that, within the range of potentials 1.10–1.25 V vs saturated mercury acetate electrode in glacial acetic acid, the oxidation process results in mono- and diacetates of 2-methylnaphthalene formation. The values of Eτ/4 for 2-methylnaphthalene, 1-acetate-2-methylnaphthyl and 1,4-diacetate-2-methylnaphthyl oxidation have been determined as 1.09, 1.05 and 1.13 V, respectively. The degree of 2-methylnaphthalene conversion to monoacetate reaches its maximum value at 1.25 V which is 32.8%. 相似文献
1000.