Non‐Toxic Dry‐Coated Nanosilver for Plasmonic Biosensors

The plasmonic properties of noble metals facilitate their use for in vivo bio‐applications such as targeted drug delivery and cancer cell therapy. Nanosilver is best suited for such applications as it has the lowest plasmonic losses among all such materials in the UV‐visible spectrum. Its toxicity, however, can destroy surrounding healthy tissues and thus, hinders its safe use. Here, that toxicity against a model biological system (Escherichia coli) is “cured” or blocked by coating nanosilver hermetically with a about 2 nm thin SiO₂ layer in one‐step by a scalable flame aerosol method followed by swirl injection of a silica precursor vapor (hexamethyldisiloxane) without reducing the plasmonic performance of the enclosed or encapsulated silver nanoparticles (20–40 nm in diameter as determined by X‐ray diffraction and microscopy). This creates the opportunity to safely use powerful nanosilver for intracellular bio‐applications. The label‐free biosensing and surface bio‐functionalization of these ready‐to‐use, non‐toxic (benign) Ag nanoparticles is presented by measuring the adsorption of bovine serum albumin (BSA) in a model sensing experiment. Furthermore, the silica coating around nanosilver prevents its agglomeration or flocculation (as determined by thermal annealing, optical absorption spectroscopy and microscopy) and thus, enhances its biosensitivity, including bioimaging as determined by dark field illumination.     

Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE

The growth of InMnAs quantum dots by low pressure MOVPE technique on patterned (1 0 0) GaAs substrates was studied. The patterning in the form of ridges with sidewalls having (2 1 1) and (3 1 1) facets was prepared by wet chemical etching via a GaAs/AlAs sacrificial etching mask structure. AFM studies showed that the dots formation and distribution were very similar for both types of facets under study. InMnAs dot density on the (3 1 1) plane is about 5–7 times lower in comparison to that on the (1 0 0) planar substrate. The dots on sidewalls are larger in comparison to average dots formatted on planar GaAs (1 0 0) substrate. The lateral dimensions of these dots are in the interval 100–180 nm. In addition, dot distribution along the sidewall (from top to bottom) is not uniform. A higher dot concentration was observed close to the intersection of (3 1 1) facets with concave bottom part of the valleys between ridges. Finally, no dots were grown on the (1 0 0) plane created by self-faceting on the top of the triangular ridges. This is probably a consequence of the high quality of the (1 0 0) facet formed by lateral overgrowth.     

Vitamins as Active Agents for Highly Emissive and Stable Nanostructured Halide Perovskite Inks and 3D Composites Fabricated by Additive Manufacturing

The use of non-toxic and low-cost vitamins like α-tocopherol (α-TCP, vitamin E) to improve the photophysical properties and stability of perovskite nanocrystals (PNCs), through post-synthetic ligand surface passivation, is demonstrated for the first time. Especially interesting is its effect on CsPbI₃ the most unstable inorganic PNC. Adding α-TCP produces that the photoluminescence quantum yield (PLQY) of freshly prepared and aged PNCs achieves values of ≈98% and 100%, respectively. After storing 2 months under ambient air and 60% relative humidity, PLQY is maintained at 85% and 67%, respectively. α-TCP restores the PL features of aged CsPbI₃ PNCs, and mediates the radiative recombination channels by reducing surface defects. In addition, the combination of α-TCP and PNCs facilitates the chemical formulation to prepare PNCs-acrylic polymer composites processable by additive manufacturing. This enables the development of complex shaped parts with improved luminescent features and long-term stability for 4 months, which is not possible for non-modified PNCs. A PLQY ≈92% is reached in the 3D printed polymer/PNC composite, the highest value obtained for a red-emitting composite solid until now as far as it is known. The passivation shell provided by α-TCP makes that PNCs inks do not suffer any degradation process avoiding the contact with the environment and preserve their properties after reacting with polar monomers during composite polymerization.     

A low-voltage low-power threshold voltage monitor for CMOS process sensing

In this paper a low-voltage low-power threshold voltage monitor for CMOS process sensing is presented. This circuit works in weak inversion and it can be used as an elementary circuit block for on-chip compensation of the intra-die or inter-die threshold voltage variations in low-power analog and mixed-signal SoC, since it is robust to temperature and power supply voltage variations (similar to the bandgap voltage reference). The proposed threshold voltage monitor has been successfully verified in a standard 0.35-μm n-well CMOS TSMC process. Experimental results have confirmed that the circuit generates an average reference voltage of 758 mV (very close to the typical threshold voltage when extrapolated to absolute zero) for a 950 mV power supply voltage, with a variation of 39 ppm/°C for the −20 to 80°C temperature range.     

A Resource Oriented Framework for Service Choreography over Wireless Sensor and Actor Networks

Current Internet of Things (IoT) development requires service distribution over Wireless Sensor and Actor Networks (WSAN) to deal with the drastic increasing of network management complexity. Because of the specific constraints of WSAN, some limitations can be observed in centralized approaches. Multi-hop communication used by WSAN introduces transmission latency, packet errors, router congestion and security issues. As it uses local services, a model of decentralized services avoids long path communications between nodes and applications. But the two main issues are then to design (1) the composition of such services and to map (2) them over the WSAN. This contribution proposes a model for decentralized services based on Resource Oriented Architecture in which their communications are designed thanks to an adaptation of Petri Network (1). In addition, the problem of decentralized service mapping and its deployment over a WSAN is successfully resumed by a Pseudo-Boolean Optimization in order to minimize network communication load (2). These contributions are presented using a proposed EMMA middleware as unifying thread.     

Air Processing of Thick and Semitransparent Laminated Polymer:Non-Fullerene Acceptor Blends Introduces Asymmetric Current–Voltage Characteristics

Non-fullerene acceptors have recently revolutionized indoor organic photovoltaics (OPVs) with power conversion efficiencies exceeding 30% in laboratory scale. Nevertheless, transferring their superior performance to larger-scale prototyping, i.e., air-processing via roll-to-roll compatible techniques, still shows severe challenges. Herein, the industrial potential of the PM6:IO4Cl blend, which is one of the most successful indoor OPV photoactive layers (PALs), is thoroughly investigated. The corresponding thick and semitransparent laminated devices are fabricated entirely in air, by blade and slot-die coating. Their current–voltage (J–V) characteristics show anomalous features depending on the illumination side, with the cathode side generally outperforming the anode counterpart. Electrical and optical modeling reveal that a plausible cause of such a phenomenon is a dead layer that forms at the PAL/anode contact interface that does not contribute to the photocurrent. Said layer becomes undetectable when the PALs are made thin enough (<35 nm each) leading to symmetric J–V curves and improved light utilization efficiency. By screening the photovoltaic performance of multiple donor:acceptor blends, certain all-polymer and polymer:fullerene PALs are identified as adequately symmetric candidates for thick device up-scaling. Finally, ternary blends based on PM6:IO4Cl:fullerene may constitute a viable route to mitigate the electrical asymmetry detected on conventional binary blends.     

A novel implementation of the histogram-based technique for measurement of INL of LUT-based correction of ADC

The histogram-based technique is commonly used for testing of Analog-to-Digital Converters (ADC). One of the parameters measured thanks to this technique is the Integral Non Linearity (INL). INL is also used as an initial data related to the ADC performances for the computation of a correction table in case of a LUT-based correction technique. In this context of embedded INL measurement and embedded computation of the table for LUT-based correction of ADC, we propose a new implementation establishing what we consider the best trade-off between silicon area overhead and computing time. We compare our solution with the state of the art: (a) with VHDL-level simulation we compare time performance, and (b) with FPGA placer we estimate the final surface head-out.     

Effects of Phonon Confinement on Anomalous Thermalization,Energy Transfer,and Upconversion in Ln3+‐Doped Gd2O3 Nanotubes

There is a growing interest in understanding how size‐dependent quantum confinement affects the photoluminescence efficiency, excited‐state dynamics, energy‐transfer and thermalization phenomena in nanophosphors. For lanthanide (Ln³⁺)‐doped nanocrystals, despite the localized 4f states, confinement effects are induced mostly via electron–phonon interactions. In particular, the anomalous thermalization reported so far for a handful of Ln³⁺‐doped nanocrystals has been rationalized by the absence of low‐frequency phonon modes. This nanoconfinement may further impact on the Ln³⁺ luminescence dynamics, such as phonon‐assisted energy transfer or upconversion processes. Here, intriguing and unprecedented anomalous thermalization in Gd₂O₃:Eu³⁺ and Gd₂O₃:Yb³⁺,Er³⁺ nanotubes, exhibiting up to one order of magnitude larger than previously reported for similar materials, is reported. This anomalous thermalization induces unexpected energy transfer from Eu³⁺ C₂ to S₆ crystallographic sites, at 11 K, and ²H_11/2 → ⁴I_15/2 Er³⁺ upconversion emission; it is interpreted on the basis of the discretization of the phonon density of states, easily tuned by varying the annealing temperature (923–1123 K) in the synthesis procedure, and/or the Ln³⁺ concentration (0.16–6.60%).     

An ensemble-based system for microaneurysm detection and diabetic retinopathy grading

Reliable microaneurysm detection in digital fundus images is still an open issue in medical image processing. We propose an ensemble-based framework to improve microaneurysm detection. Unlike the well-known approach of considering the output of multiple classifiers, we propose a combination of internal components of microaneurysm detectors, namely preprocessing methods and candidate extractors. We have evaluated our approach for microaneurysm detection in an online competition, where this algorithm is currently ranked as first, and also on two other databases. Since microaneurysm detection is decisive in diabetic retinopathy (DR) grading, we also tested the proposed method for this task on the publicly available Messidor database, where a promising AUC 0.90 ± 0.01 is achieved in a "DR/non-DR"-type classification based on the presence or absence of the microaneurysms.     

Comprehensive nanostructural study of SSRM nanocontact on silicon

Scanning Spreading Resistance Microscopy electro-mechanical nanocontacts are nowadays well understood and numerous influent parameters have been identified (bias, load, surface state sample, radius of curvature of the tip). Despite several simulation and modelization possibilities, calibration curves are required to ensure reliable electrical characterizations. In this paper, we bring, through nanostructural studies (Scanning Transmission Electron Microscopy) of surface state of both SSRM tips and doped silicon surface a new understanding of tip-sample interaction during SSRM measurements. As a result of load, a nanometric residual amorphous silicon layer was observed which thickness depends on applied force and might be due to as well to the plastic transformation (Si to β-tin phase) as to plough-effect residues resulting from the tip indentation into the sample. It appears thus important in a failure analysis process to find the best compromise between stable electrical SSRM response and sample/tip surface degradation.