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41.
Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of
semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons
of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr). 相似文献
42.
The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications. 相似文献
43.
The Woodman Point Wastewater Treatment Plant (WWTP) in Western Australia has experienced two separate problems causing avoidable maintenance costs: the build-up of massive struvite (MgNH4PO4. 6H2O) scaling downstream of the anaerobic digester and the formation of hydrogen sulfide (H2S) levels in the digester gas to levels that compromised gas engine operation and caused high operating costs on the gas scrubber. As both problems hang together with a chemical imbalance in the anaerobic digester, we decided to investigate whether both problems could be (feasibly and economically) addressed by a common solution (such as dosing of iron solutions to precipitate both sulfide and phosphate), or by using separate approaches. Laboratory results showed that, the hydrogen sulfide emission in digesters could be effectively and economically controlled by the addition of iron dosing. Slightly higher than the theoretical value of 1.5 mol of FeCl3 was required to precipitate 1 mol of dissolved sulfide inside the digester. Due to the high concentration of PO4(3-) in the digested sludge liquor, significantly higher iron is required for struvite precipitation. Iron dosing did not appear an economic solution for struvite control via iron phosphate formation. By taking advantage of the natural tendency of struvite formation in the digester liquid, it is possible to reduce the risk of struvite precipitation in and around the sludge-dewatering centrifuge by increasing the pH to precipitate struvite out before passing through the centrifuge. However, as the Mg2+/PO4(3-) molar ratio in digested sludge was low, by increasing the pH alone (using NaOH) the precipitation of PO4(3-) was limited by the amount of cations (Ca2+ and Mg2+) available in the sludge. Although this would reduce struvite precipitation in the centrifuge, it could not significantly reduce PO4(3-) recycling back to the plant. For long-term operation, maximum PO4(3-) reduction should be the ultimate aim to minimise PO4(3-) accumulation in the plant. Magnesium hydroxide liquid (MHL) was found to be the most cost-effective chemical to achieve this goal. It enhanced struvite precipitation from both, digested sludge and centrate to the point where more than 95% PO4(3-) reduction in the digested sludge was achieved. 相似文献
44.
This paper investigates the catalytic ignition of the H2/O2/CO2 mixture on platinum in a stagnation flow at atmospheric pressure experimentally and numerically. We measure the ignition temperatures of the gas mixtures flowing towards resistively heated platinum with various composition ratios and various diluent gases of N2, Ar and CO2. Compared with N2 or Ar, the CO2 dilution shows higher ignition temperature by about 50 K, even at the same composition ratio. The ignition temperature increase is proportional to the dilution ratio. Through the numerical simulation, it is illustrated that higher ignition temperature is caused by the adsorption of CO2 and following dissociation on platinum surface, which was to date considered negligible in catalytic combustion. 相似文献
45.
This paper presents a low‐cost RF parameter estimation technique using a new RF built‐in self‐test (BIST) circuit and efficient DC measurement for 4.5 to 5.5 GHz low noise amplifiers (LNAs). The BIST circuit measures gain, noise figure, input impedance, and input return loss for an LNA. The BIST circuit is designed using 0.18 μm SiGe technology. The test technique utilizes input impedance matching and output DC voltage measurements. The technique is simple and inexpensive. 相似文献
46.
Ho Van Khuong Hyung-Yun Kong 《Communications Letters, IEEE》2006,10(3):159-161
In order to evaluate exactly the performance of some diversity schemes, the probability density function (pdf) of a sum of independent exponential random variables (r.v.'s) must be known. This paper proposes a simple method to find it by using characteristic function., The resultant pdf is successfully applied to formulate the closed-form BER expression of 2 Tx-J Rx transmit diversity as well as the outage probability of repetition coding. 相似文献
47.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
48.
49.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
50.
Taesung Kim Sung Ho Wang Beomsup Kim 《Electronics letters》2002,38(17):950-951
A delay-locked loop (DLL) architecture capable of incorporating fast locking and low jitter features simultaneously is reported. A test chip was fabricated in a 0.6 μm CMOS process to prove its functionality. The proposed DLL can align the internal clock to the external reference clock within two cycles and maintain its locking state with the aid of feedback operation 相似文献