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21.
Yen-Shin Lai Juo-Chiun Lin 《Power Electronics, IEEE Transactions on》2003,18(5):1211-1219
A new hybrid fuzzy controller for direct torque control (DTC) induction motor drives is presented in this paper. The newly developed hybrid fuzzy control law consists of proportional-integral (PI) control at steady state, PI-type fuzzy logic control at transient state, and a simple switching mechanism between steady and transient states, to achieve satisfied performance under steady and transient conditions. The features of the presented new hybrid fuzzy controller are highlighted by comparing the performance of various control approaches, including PI control, PI-type fuzzy logic control (FLC), proportional-derivative (PD) type FLC, and combination of PD-type FLC and I control, for DTC-based induction motor drives. The pros and cons of these controllers are demonstrated by intensive experimental results. It is shown that the presented induction motor drive is with fast tracking capability, less steady state error, and robust to load disturbance while not resorting to complicated control method or adaptive tuning mechanism. Experimental results derived from a test system are presented confirming the above-mentioned claims. 相似文献
22.
Jui-Ting Weng Jiunn Ru Lai Wanjiun Liao 《Wireless Communications, IEEE Transactions on》2006,5(7):1676-1684
In this paper, we analyze node mobility for reliable packet delivery in mobile IP networks. In mobile IP, packets destined to roaming nodes are intercepted by their home agents and delivered via tunneling to their care of addresses (CoA). A mobile node may roam across multiple subnets. At each boundary crossing, a handoff is initiated such that the CoA is updated and a new tunnel is established. We consider both basic mobile IP handoff and smooth handoff. We find that reliable packet delivery in mobile IP networks can be modeled as a renewal process, because the retransmission over a new tunnel after each boundary crossing is independent of the previous history. We then derive the probability distribution of boundary crossings for each successful packet, based on which the packet reliable delivery time can be obtained. Our analytical model is derived based on a general distribution of residence time in a subnet and a general distribution of successful retransmission attempts in each subnet. The results can be readily applied to any distributions for both items. We also provide numerical examples to calculate the probability distribution of boundary crossings, and conduct simulations to validate our analytical results 相似文献
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24.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
25.
The objective is to have uniformly distributed tangential stresses on the transition profile of a stepped bar subjected to tensile and torsional loading using an axisymmetric boundary element formulation. The transition curve is represented by the Langragian interpolation polynomial with progressive degrees to avoid shape distortion during the optimization procedure. The calculated result is compared with that obtained by fluid dynamics given in the literature. It is seen that the transition curve obtained in this paper is reasonable. 相似文献
26.
Juey H. Lai Curtis Knudson Leander Hallgren Richard B. Douglas Patrick Griffin 《Polymer Engineering and Science》1985,25(12):778-781
This paper reports the effect of humidity and temperature on the adhesive strength of a pressure sensitive adhesive (Flexbond 150) used to bond Mylar films. It has been found that, ill general, the adhesive strength decreases significantly with an increase in temperature. The effect of humidity on the bonding strength, however, was found to be process dependent. The sample preparation conditions, e.g., press weight for the bonding and the press time, are important in determining the humidity effect. The water sorption isotherm A 24°C for the adhesive was also determined. The amount of water sorbed by the adhesive at 95 percent relative pressure was found to be less than one weight percent. 相似文献
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29.
Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs 总被引:1,自引:0,他引:1
Chung-Hsun Jang Sheu J.K. Tsai C.M. Shei S.C. Lai W.C. Chang S.J. 《Photonics Technology Letters, IEEE》2008,20(13):1142-1144
The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same. 相似文献
30.
In this paper we verified the submodeling technique applied in the thermomechanical reliability assessment of a flip-chip BGA under accelerated thermal cycling test conditions. Since the steady-state creep model was implemented for the solder bump to better represent its realistic mechanical behavior, submodeling procedures developed specifically for path-dependent thermomechanical problems were considered. A detailed global model for the flip-chip BGA was built up to verify submodeling solutions. This model also served as a benchmark to examine solution discrepancies caused by different simplifications of the global model. 相似文献