Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process

Through revising the process of charge collection for reversed drain-bulk junction,a bias-dependent SPICE model is proposed which includes the bipolar amplification effect that cannot be ignored in PMOS.The model can capture the plateau effect,and produce current and voltage pulse shapes and widths that are consistent with TCAD simulation.Considering the case of connecting load,it is still valid.For combination and sequential logic circuits,the SET pulsewidths and LET upset threshold from SPICE model are consistent with TCAD simulations.     

均分散TiO2纳米晶的制备及应用研究进展

介绍了不同晶形TiO2纳米晶的制备、应用;对TiO2纳米晶的合成方法以及相关材料的应用进展,尤其是均分散TiO2纳米晶的制备技术进行了综述。     

Experimental characterization of the bipolar effect on P-hit single-event transients in 65 nm twin-well and triple-well CMOS technologies

Single-event charge collection is controlled by drift, diffusion and the bipolar effect. Previous work has established that the bipolar effect is significant in the p-type metal-oxide-semiconductor field-effect transistor (PMOS) in 90 nm technology and above. However, the consequences of the bipolar effect on P-hit single-event transients have still not completely been characterized in 65 nm technology. In this paper, characterization of the consequences of the bipolar effect on P-hit single-event transients is performed by heavy ion experiments in both 65 nm twin-well and triple-well complementary metal-oxide-semiconductor (CMOS) technologies. Two inverter chains with clever layout structures are explored for the characterization. Ge (linear energy transfer (LET) = 37.4 MeV cm²/mg) and Ti (LET = 22.2 MeV cm²/mg) particles are also employed. The experimental results show that with Ge (Ti) exposure, the average pulse reduction is 49 ps (45 ps) in triple-well CMOS technology and 42 ps (32 ps) in twin-well CMOS technology when the bipolar effect is efficiently mitigated. This characterization will provide an important reference for radiation hardening integrated circuit design.     

Graph-based fine-grained model selection for multi-source domain

Pattern Analysis and Applications - The prosperity of datasets and model architectures has led to the development of pretrained source models, which simplified the learning process in multi-domain...     

Studies and advances on joint source-channel encoding/decoding techniques in flow media communications

Joint source-channel coding/decoding (JSCC/JSCD) techniques in flow media communications have become a state-of-the-art and one of the challenging research subjects in the spatial communication area. They have great application prospective and deep impact in various manned space flights, satellite missions, mobile radio communications and deep-space explorations. In the last few years, there have been influential achievements in JSCC/JSCD studies. This paper aims at an introduction to the basic principles o...     

基于RS－485总线的分布式金刚石加工监控系统研制

本文提出了一种基于RS－485总线构建分布式监控系统的方法。描述了由就地控制层、主监控层和远程监控层组成的分布式测控系统的三层结构模型。通过在研制金刚石加工监控系统中的应用证明，此模型具有良好的应用前景。     

抽水蓄能电站雷电侵入波保护的数值仿真

采用PSCAD／EMTDC程序计算分析了江苏抽水蓄能电站500kV变电站雷电侵入波保护的效果，考虑了不同运行方式、不同雷击点的情况，还计算分析了杆塔冲击接地电阻、避雷器的布置及参数对保护效果的影响。计算结果表明，该工程的雷电侵入波保护避雷器的配置和接线方式可以满足安全可靠性的要求。     

Simulation analysis of heavy-ion-induced single-event response for nanoscale bulk-Si FinFETs and conventional planar devices

FinFET technologies are becoming the mainstream process as technology scales down. Based on 28-nm bulk-Si FinFETs and planar transistors, three-dimensional technology computer-aided design (TCAD) simulations are performed to investigate the charge collection mechanisms and single-event transient (SET) pulse widths for nanoscale devices. Simulation results show that charge collection and SET pulse widths for FinFETs are smaller than those of the planar device. An overall analysis indicates that for P-hits, the reduced charge collection in p-FinFET is induced mainly by the narrow sensitivity drain volumes when ion linear energy transfer (LETs) less than 20 MeV cm²/mg; however, the parasitic bipolar amplification effect presents an important effect on the charge reduction for higher ion LETs. An in-depth analysis shows that the reduced bipolar amplification effect in p-FinFET is owing to the conduction channel (fin body) rather than source/drain region. Due to a parasitic reversed bipolar effect, the single-event response for N-hit is less sensitive than that for P-hit. Moreover, comparisons of the temperature dependence of SET pulse width in both FinFETs and planar devices is carried out, which indicate that the SET pulse width in PMOS shows stronger temperature dependence than that in p-FinFET. This gives a new insight into the single-event effects (SEE) in FinFETs, which can provide guidelines for future radiation-hardened applications of FinFET-based circuits.     

五自由度随机参数结构车辆的振动响应分析

为了研究路面不平度产生的随机激励对随机结构参数非线性车辆系统的振动响应的影响,建立了随机结构参数的五自由度非线性车辆模型,将模型参数均认为是随机变量,在模型轮胎和车身之间存在非线性弹簧的前提下,来研究模型在随机激励下的随机振动响应。将路面的不平整度引起的对车辆的激励看作是白噪声过程来建立力学模型。先以能量差法等效线性化处理非线性车辆系统,然后求解李雅普诺夫方程来获得平稳随机振动响应协方差矩阵,通过多次迭代得到稳定的等效线性车辆系统参数。算例计算结果表明,方法可以高效和高精度的求解非线性系统在随机过程激励下的响应。     

基于双目标优化遗传算法和支持向量机的旋转机械退化状态识别

退化特征提取是机械健康状态监测的重要组成部分,伴随旋转机械长时间连续运转,退化特征出现性能波动甚至下降,给退化特征提取和选择造成了困难.首先利用一个特征映射算法库对振动信号提取特征,并基于Kolnogorov-Smirnov (KS)检验和Benjamini-Yekutieli过程对原始特征集进行过滤,然后利用双目标优化遗传算法(Bi-objective Optimization Genetic Algorithm,BOGA)结合支持向量机分类器(Support Vector Classifier,SVC),在有监督的环境下搜索出最佳特征子集,其中BOGA设置了SVC分类精确度和特征子集维数两个目标函数,前者进行最大化,后者进行最小化.通过在液压泵退化状态数据集上进行实验和在凯斯西楚大学轴承数据集与FRESH_PCAa、ReliefF、JMIM三种方法进行对比,验证了该方法在退化状态识别上的较好性能.